Antiphase boundaries in Ba0.75Sr0.25TiO3 epitaxial film grown on (001) LaAlO3 substrate

Wang, Y. Q.; Liang, Wenshuang; Petrov, Peter K.; Alford, Neil McN.

doi:10.1063/1.3562972

Cited by 11 publications

(11 citation statements)

References 18 publications

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“…For this purpose, the use of selective area growth (SAG) is required. [6][7][8] The direct epitaxy of III-Vs semiconductors on Si could generate different crystalline defects at the III-V/Si interface, such as threading dislocations due to lattice and thermal expansion coefficient mismatches and anti-phase boundaries (APBs) due to polar/non-polar interfaces [9][10][11] but also twins and stacking faults which would strongly degrade device performances. In order to reduce the number of defects as much as possible and enable "defect free" active regions III-V based devices, we make use of necking effect approach, by growing selectively the III-V on Si substrates in shallow trench isolation (STI) structures 12 with an aspect ratio superior to 2.…”

Section: Introductionmentioning

confidence: 99%

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Merckling

Waldron

Jiang

et al. 2013

Journal of Applied Physics

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Articles you may be interested inHeteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering Selective area growth of InP on lithography-free, nanopatterned GaAs(001) by metalorganic chemical vapor deposition J.Reduction of sidewall defect induced leakage currents by the use of nitrided field oxides in silicon selective epitaxial growth isolation for advanced ultralarge scale integration Heterogeneous integration of III-V semiconductors on Si substrate has been attracting much attention as building blocks for next-generation electronics, optoelectronics, and photonics. In the present paper, we studied the selective area epitaxial studies of InP grown on 300 mm on-axis Si (001) substrates patterned with Shallow Trench Isolation (STI) using the necking effect technique to trap crystalline defects on the sidewalls. We make use of a thin Ge buffer in the bottom of the trench to reduce interfacial strain at the interface and to promote InP nucleation. We could show here, by systematic analysis, the strong impact of the growth temperatures and pressures of the InP layer on the growth uniformity along the trench and crystalline quality that we correlated with resistance changes and interdiffusion measured in the III-V layer. The key challenge remains in the ultimate control of crystalline quality during InP selective growth in order to reduce defect density to enable device-quality III-V virtual substrates on large-scale Si substrates. V C 2013 AIP Publishing LLC. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Merckling

Waldron

Jiang

et al. 2013

Journal of Applied Physics

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“…The SAED pattern (Figure 2d inset) confirms the epitaxial relationship described above (Figure 1). The defects are correlated with the formation of antiphase boundaries, which has been reported as a relaxation mechanism in perovskites [15] and other structures. [16] Following the off angle tilt growth found in STEM, an additional XRD measurement was performed as shown in Figure 3 where two different measurements on the same film were performed.…”

Section: Resultsmentioning

confidence: 69%

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of CaMnO_3–y Films on LaAlO₃(112¯0) by Pulsed Direct Current Reactive Magnetron Sputtering

Ekström

Elsukova

Grasland

et al. 2022

Physica Rapid Research Ltrs

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CaMnO3 is a perovskite with attractive magnetic and thermoelectric properties. CaMnO3 films are usually grown by pulsed laser deposition or radio frequency magnetron sputtering from ceramic targets. Herein, epitaxial growth of CaMnO3–y (002) films on a (112false¯0)‐oriented LaAlO3 substrate using pulsed direct current reactive magnetron sputtering is demonstrated, which is more suitable for industrial scale depositions. The CaMnO3–y shows growth with a small in‐plane tilt of <≈0.2° toward the (200) plane of CaMnO3–y and the (1false¯104) with respect to the LaAlO3 (112false¯0) substrate. X‐ray photoelectron spectroscopy of the electronic core levels shows an oxygen deficiency described by CaMnO2.58 that yields a lower Seebeck coefficient and a higher electrical resistivity when compared to stoichiometric CaMnO3. The LaAlO3 (112false¯0) substrate promotes tensile‐strained growth of single crystals. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal antiphase boundaries composed of Ca on Mn sites along <101> and <002>, forming stacking faults.

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“…Alternatively, thin-film heterostructures provide a platform to manipulate APB formation and nucleation. Large in-plane lattice mismatch between films and substrates is one of the most common mechanisms to nucleate APBs (18)(19)(20)(21). To relieve the large strain energy from substrate, APBs are formed with random locations and morphology, and thus it is difficult to predict their locations and growth direction.…”

mentioning

confidence: 99%

Designing antiphase boundaries by atomic control of heterointerfaces

Wang

Guo

Shao

et al. 2018

Proc. Natl. Acad. Sci. U.S.A.

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Extended defects are known to have critical influences in achieving desired material performance. However, the nature of extended defect generation is highly elusive due to the presence of multiple nucleation mechanisms with close energetics. A strategy to design extended defects in a simple and clean way is thus highly desirable to advance the understanding of their role, improve material quality, and serve as a unique playground to discover new phenomena. In this work, we report an approach to create planar extended defects-antiphase boundaries (APB) -with well-defined origins via the combination of advanced growth, atomic-resolved electron microscopy, first-principals calculations, and defect theory. In LaSrMnO thin film grown on SrRuO substrate, APBs in the film naturally nucleate at the step on the substrate/film interface. For a single step, the generated APBs tend to be nearly perpendicular to the interface and propragate toward the film surface. Interestingly, when two steps are close to each other, two corresponding APBs communicate and merge together, forming a unique triangle-shaped defect domain boundary. Such behavior has been ascribed, in general, to the minimization of the surface energy of the APB. Atomic-resolved electron microscopy shows that these APBs have an intriguing antipolar structure phase, thus having the potential as a general recipe to achieve ferroelectric-like domain walls for high-density nonvolatile memory.

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Antiphase boundaries in Ba0.75Sr0.25TiO3 epitaxial film grown on (001) LaAlO3 substrate

Cited by 11 publications

References 18 publications

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Epitaxial Growth of CaMnO_3–y Films on LaAlO₃(112¯0) by Pulsed Direct Current Reactive Magnetron Sputtering

Designing antiphase boundaries by atomic control of heterointerfaces

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Antiphase boundaries in Ba0.75Sr0.25TiO3 epitaxial film grown on (001) LaAlO3 substrate

Cited by 11 publications

References 18 publications

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Selective area growth of InP in shallow trench isolation on large scale Si(001) wafer using defect confinement technique

Epitaxial Growth of CaMnO3–y Films on LaAlO3(112¯0) by Pulsed Direct Current Reactive Magnetron Sputtering

Designing antiphase boundaries by atomic control of heterointerfaces

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Epitaxial Growth of CaMnO_3–y Films on LaAlO₃(112¯0) by Pulsed Direct Current Reactive Magnetron Sputtering