Antimony-Rich Surface Layer on Diffused Germanium

McNamara, John

doi:10.1149/1.2428043

Cited by 2 publications

(1 citation statement)

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“…The triangles showed i n t e r f e rence colors suggesting g r o w t h of only a few t h o usand a n g s t r o m s thickness. The apices of some of these t r i a n g l e s point in the [211] w h e r e a s others in the [2][3][4][5][6][7][8][9][10][11] direction.…”

Section: Resultsmentioning

confidence: 99%

Epitaxial Growth of Gallium Arsenide on Germanium Substrates

Gabor

1964

J. Electrochem. Soc.

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Morphological and etching studies on films of gallium arsenide deposited on germanium substrates have revealed twin planes, grains, and stacking faults. The evidence suggests that these defects are related to the faceting of the substrafe and to the presence of oxide films.The deposition of gallium arsenide films on low index planes of germanium substrates has been described (i-4), and recently films altogether free of stacking faults have been grown (5). We have found it much more difficult to avoid the formation of faults in films grown on ~111} surfaces of germanium than in films grown on gallium arsenide substrates. The aim of the work described in this communication was to examine the causes of fault formation when germanium was used as substrate. ExperimentalFlow system.--A stream of hydrogen containing arsenic trichloride was passed over gallium arsenide in an open tube. The resulting gas mixture then flowed over germanium substrates in a lower temperature region. The substrates were lying horizontally on semicylindrical holders so that some growth

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Section: Resultsmentioning

confidence: 99%