Antimony-Based III–V Thermophotovoltaic Materials and Devices

Wang, Chien‐Min

doi:10.1063/1.1841902

Cited by 17 publications

(14 citation statements)

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“…The experimental data with the similar device structure are taken from Ref. [1], the simulated results agree well with the experimental data. Fig.…”

Section: Resultssupporting

confidence: 71%

“…Most of the recently reported GaInAsSb diodes are in the range of 0.5-0.55 eV [1][2][3]. The optimal radiator temperature, when considering 95-97% reflection of all below-bandgap photons, is 950°C [4].…”

Section: Introductionmentioning

confidence: 99%

“…Quaternary alloys, GaInAsSb, have attracted much interest in the technology of choice for present and future thermophotovoltaic (TPV) diodes, because they have the advantage of the versatility in obtaining alloys with a large range of energy gaps from 0.296 eV (4.2 lm) to 0.726 eV (1.7 lm) when lattice matched to commercially available GaSb wafers [1][2][3], which covers the typical wavelength range of TPV diodes with low temperature (800-1700°C) radiators [4]. Most of the recently reported GaInAsSb diodes are in the range of 0.5-0.55 eV [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes

Peng

Guo

Zhang

et al. 2009

Infrared Physics & Technology

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“…The experimental data with the similar device structure are taken from Ref. [1], the simulated results agree well with the experimental data. Fig.…”

Section: Resultssupporting

confidence: 71%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes

Peng

Guo

Zhang

et al. 2009

Infrared Physics & Technology

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“…In particular, we explore Si/SiO2/Pt structures. We show experimentally that these structures exhibit a selective emission spectrum suitable for TPV applications, comparable with state-of-the-art full metallic structures, and that they are thermally stable at temperatures up to 1100 K. These structures are well suited for TPV systems in combination with III-V semiconductors in the range Eg=0.4-0.55 eV such as InAsSbP [15,16] (Eg=0.3-0.55 eV) and InGaAsSb [17,18,19] (Eg=0.5-0.6 eV).…”

Section: Introductionmentioning

confidence: 99%

Three-dimensional metallo-dielectric selective thermal emitters with high-temperature stability for thermophotovoltaic applications

Garín

Hernández

Trifonov

et al. 2015

Solar Energy Materials and Solar Cells

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Selective thermal emitters concentrate most of their spontaneous emission in a spectral band much narrower than a blackbody. When used in a thermophovoltaic energy conversion system, they become key elements defining both its overall system efficiency and output power. Selective emitters' radiation spectra must be designed to match their accompanying photocell's band gap and, simultaneously, withstand high temperatures (above 1000 K) for long operation times. The advent of nanophotonics has allowed the engineering of very selective emitters and absorbers; however, thermal stability remains a challenge since 1 of 22 nanostructures become unstable at temperatures much below the melting point of the used materials. In this paper we explore an hybrid 3D dielectric-metallic structure that combines the higher thermal stability of a monocrystalline 3D Silicon scaffold with the optical properties of a thin Platinum film conformally deposited on top. We show experimentally that these structures exhibit a selective emission spectrum suitable for TPV applications and that they are thermally stable at temperatures up to 1100 K. These structures are ideal in combination with III-V semiconductors in the range Eg=0.4-0.55 eV such as InGaAsSb (Eg=0.5-0.6 eV) and InAsSbP (Eg=0.3-0.55 eV).

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“…Among III-V compounds, gallium antimonide was the first material widely used as TPV receivers. Ga 1-x In x As y Sb 1-y quaternary alloys lattice matched to GaSb and GaInAsP quaternary alloys lattice matched to InAs have been also developed for TPV cells [2,3] .…”

Section: Introductionmentioning

confidence: 99%

Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy

et al. 2007

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GaSb based cells as receivers in thermophotovoltaic system have attracted great interest and been extensively studied in the recent 15 years. Although nowadays the manufacturing technologies have made a great progress, there are still some details need to make a further study. In this paper, undoped and doped GaSb layers were grown on n-GaSb (100) substrates from both Ga-rich and Sb-rich solutions using liquid phase epitaxy (LPE) technique. The nominal segregation coefficients k of intentional doped Zn were 1.4 and 8.8 determined from the two kinds of GaSb epitaxial layers. Additionally, compared with growing from Ga-rich solutions, the growing processes from Sb-rich solutions were much easier to control and the surface morphologies of epitaxial layers were smoother. Furthermore, in order to broaden the absorbing edge, Ga 1-x In x As y Sb 1-y quaternary alloys were grown on both GaSb and InAs substrates from In-rich solutions, under different temperature respectively.

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Antimony-Based III–V Thermophotovoltaic Materials and Devices

Cited by 17 publications

References 0 publications

Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes

Numerical analysis of the short-circuit current density in GaInAsSb thermophotovoltaic diodes

Three-dimensional metallo-dielectric selective thermal emitters with high-temperature stability for thermophotovoltaic applications

Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy

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