Antimony alloys for phase-change memory with high thermal stability

Kao, Kin-Fu; Chang, Chih-Chung; Chen, Frederick T.; Tsai, Ming-Jinn; Chin, Tsung‐Shune

doi:10.1016/j.scriptamat.2010.06.036

Cited by 36 publications

(15 citation statements)

References 17 publications

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“…It is well known, Sb-rich is helpful to improve the crystallization rate due to its explosive crystallization behavior of Sb [13][14][15]. Up to now, superior films based on Sb-rich Sb-Te have been described a lot, Sb-rich Si-Sb-Te [16,17], Se-Sb-Te [18], N-doped Sb-rich Si-Sb-Te [19][20], Sb-rich Ga-Sb-Te [21] and Sb-rich Ga-Sb-Se [22].…”

Section: Introductionmentioning

confidence: 99%

Investigation on pseudo-binary ZnSb–Sb2Te3 material for phase change memory application

Wang

Shen

et al. 2015

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

Investigation on pseudo-binary ZnSb–Sb2Te3 material for phase change memory application

Wang

Shen

et al. 2015

Journal of Alloys and Compounds

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“…Ge 2 Sb 2 Te 5 (GST) is the most widely used due to its relatively good trade-off between thermal stability and crystallization speed. However, with low crystallization temperature (around 140°C), GST is susceptible to the issue of thermal cross-talk by the proximity effect [5]. The high reset current (mA) results in high power consumption for GST-based PCM [6].…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer

et al. 2013

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A phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb 3 Te layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline titanium dioxide material. Among the various thicknesses of the TiO 2 buffer layer, 4 nm was the most appropriate thickness that maximized the improvement with negligible sacrifice of the other device performances, such as the reset/set resistance ratio, voltage window, and endurance.

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“…The plots of logarithm failure time versus 1/kT for Al 0.023 (Sn 2 Se 3 ) 0.977 , Sn 2 Se 3 and GST films, shown in Fig. 6, fits a linear Arrhenius relationship due to its thermal activation nature [21]. In our case, the fitted straight line can be described as:…”

Section: Resultsmentioning

confidence: 55%

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

Zhu

Zou

et al. 2015

J Mater Sci: Mater Electron

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Phase change behavior in Al x (Sn 2 Se 3 ) 1-x (x = 0.003, 0.010, 0.023) films were investigated by utilizing in situ resistance measurements. It is found that the crystallization temperatures and resistances increase with increasing of Al content. The analysis of X-ray diffraction indicates that the grain size decreases and the crystallization is suppressed by more Al doping. Al 0.023 (Sn 2 Se 3 ) 0.977 has an excellent thermal stability with the crystallization activation energy of 3.79 eV and the failure time is longer than that of Ge 2 Sb 2 Te 5 film. The crystallization speed of Al 0.023 (Sn 2 Se 3 ) 0.977 film is faster than that of GST. The phase transition kinetics of Al 0.023 (Sn 2 Se 3 ) 0.977 films were investigated. The obtained values of Avrami indexes indicate that a one dimensional growth-dominated mechanism is responsible for the amorphous-crystalline transformation of Al 0.023 (Sn 2 Se 3 ) 0.977 film. We conclude that Al 0.023 (Sn 2 Se 3 ) 0.977 film is a good candidate for phasechange random-access memory applications with good thermal stability and high switching speed.

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Antimony alloys for phase-change memory with high thermal stability

Cited by 36 publications

References 17 publications

Investigation on pseudo-binary ZnSb–Sb2Te3 material for phase change memory application

Investigation on pseudo-binary ZnSb–Sb2Te3 material for phase change memory application

Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer

Alx(Sn2Se3)1−x phase change films for high-temperature data retention and fast transition speed application

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