2011
DOI: 10.1103/physrevb.83.094404
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Antiferromagnetic layer thickness dependence of the magnetization reversal in the epitaxial MnPd/Fe exchange bias system

Abstract: We report an investigation on the antiferromagnetic layer thickness dependence of magnetization reversal in c-axis oriented MnPd/Fe epitaxial exchange biased bilayers. Several kinds of multi-step loops were observed for different samples measured at various field orientation. The evolution of the angular dependent magnetic behavior evolving from a representative Fe film to the exchange biased bilayers was revealed. With increase of the thickness of the antiferromagnetic layers, asymmetrically shaped loops and … Show more

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Cited by 38 publications
(31 citation statements)
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“…The previously studied epitaxial systems usually possess comparable K eb and K u . Changing the EB will lead to a corresponding variation of K u [15,21]. In an experiment, a large ratio of K u /K eb can be well defined by obliquely depositing a FM layer to achieve a large K u while reducing the AFM thickness to obtain a small K eb , which could significantly change the magnetic switching.…”
Section: Resultsmentioning
confidence: 99%
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“…The previously studied epitaxial systems usually possess comparable K eb and K u . Changing the EB will lead to a corresponding variation of K u [15,21]. In an experiment, a large ratio of K u /K eb can be well defined by obliquely depositing a FM layer to achieve a large K u while reducing the AFM thickness to obtain a small K eb , which could significantly change the magnetic switching.…”
Section: Resultsmentioning
confidence: 99%
“…In contrast, the 180°m agnetic switching processes in both the square and three-step loops could be well described by a model of two successive 90°DW nucleations, but not the 180°DW nucleation [23,24]. In a subsequent paper on epitaxial MnPd/Fe EB bilayers with a rather strong K eb and K u [15], the 180°magnetic switching behavior in the square loop changed to the 180°DW nucleation. In the present IrMn/FeGa EB heterostructures, the angular dependence of 90°magnetic switching fields can be easily explained by the corresponding theoretical equations based on the 90°DW nucleation [ Figs.…”
Section: Magnetization Reversal Mechanismmentioning
confidence: 89%
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“…film [9,[41][42][43]. Moreover, the coercivity of the FM film could be significantly enhanced because of increase of domain-wall activated processes caused by the pinning effects from the AFM layer [1,5].…”
Section: B Magnetic Properties and Induced [100] Magnetic Anisotropymentioning
confidence: 99%