Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects

Sternberg, A.; Kundziņš, K.; Zauls, V.; Aulika, I.; Čakare, L.; Bittner, R.; Weber, H.W.; Humer, K.; Lesnyh, D. A.; Kulikov, D. V.; Trushin, Yu. V.

doi:10.1016/s0955-2219(03)00450-3

Cited by 19 publications

(12 citation statements)

References 11 publications

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“…Phase transition of AFE to FE can be induced by varying the temperature, electric field or hydrostatic pressure . The structure, optical properties, and superstructure determination of PZ have also been reported . Presently, compositional modifications of PZ are of great interests and have been investigated extensively.…”

Section: Introductionmentioning

confidence: 99%

Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb_1−xBa_x)ZrO₃ Ceramics

et al. 2014

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(Pb1−xBax)ZrO3 (x = 0, 0.025, 0.05, 0.075, 0.1) ceramics were synthesized by a traditional solid‐state reaction method, and the pure phase was obtained of all sintered samples. For all compositions, substitution of Pb2+ by Ba2+ reduced the phase transition temperature of antiferroelectric to ferroelectric and Curie temperature. Polarization–electric field hysteresis loops were conducted and typical ferroelectric hysteresis loops were observed in higher temperature range. Impedance and dielectric measurements were studied on the high temperature relaxation. Relaxation behavior could be suppressed after annealing treatment in oxygen atmosphere. Value of activation energy calculated from impedance was lower than that calculated from conduction measurements. It was concluded that short‐range hopping of oxygen vacancy contributes to the dielectric relaxation and long‐distance movement of doubly ionized oxygen vacancies contributes to the conduction.

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Section: Introductionmentioning

confidence: 99%

Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb_1−xBa_x)ZrO₃ Ceramics

et al. 2014

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“…Due to the field induced antiferroelectric‐to‐ferroelectric (AFE–FE) phase transition, PbZrO 3 (PZ)‐based materials and some other antiferroelectrics (AFs) have become the most promising candidates for such applications . During the phase switching process of PZ, the energy storage density can reach as high as ~50 J/cm . There are several reports on energy storage performance of PZ‐based AFE materials, such as PLZ, PSZ, and PLZST .…”

Section: Introductionmentioning

confidence: 99%

Electrical and Energy Storage Performance of Eu‐Doped PbZrO₃ Thin Films with Different Gradient Sequences

Sun

Chen

et al. 2012

J. Am. Ceram. Soc.

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The Eu‐doped compositionally graded multilayer PbZrO3 antiferroelectric thin films have been deposited on Pt(111)/Ti/SiO2/Si substrates by a sol–gel method. The effect of gradient sequence on microstructure, electrical properties, and energy storage performance has been investigated in detail. X‐ray diffraction patterns confirm that both thin films have crystallized into a unique perovskite phase. Down‐graded thin films have bigger grain sizes than up‐graded films, which is attributed to the influence of the gradient sequence of the thin films layer. The dielectric constant of down‐graded films is found to be higher than that of up‐graded films. Compared with up‐graded thin films, the energy storage density of down‐graded films is enhanced due to double hysteresis loop with small hysteresis switch, and high polarization.

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“…PbZrO 3 (PZO) as a typical AFE material has been widely studied for high‐density energy storage . To increase the recoverable energy storage density of PZO, the maximum polarization could be enhanced through the doping of La 3+ , Eu 2+ and Sr 2+ at the Pb 2+ site, and Ti 4+ and Sn 4+ at the Zr 4+ site in the PZO lattice .…”

Section: Introductionmentioning

confidence: 99%

“…PbZrO 3 (PZO) as a typical AFE material has been widely studied for high-density energy storage. 8 To increase the recoverable energy storage density of PZO, the maximum polarization could be enhanced through the doping of La 3+ , Eu 2+ and Sr 2+ at the Pb 2+ site, and Ti 4+ and Sn 4+ at the Zr 4+ site in the PZO lattice. [9][10][11][12] Ge et al 13 reported the effect of strain on the polarization switching of epitaxial PZO films, and found that the orientation could adjust the maximum polarization to increase the recoverable energy storage density.…”

Section: Introductionmentioning

confidence: 99%

“…[9][10][11][12] Ge et al 13 reported the effect of strain on the polarization switching of epitaxial PZO films, and found that the orientation could adjust the maximum polarization to increase the recoverable energy storage density. Moreover, the recoverable energy storage density of the PZO and PZO-based AFE films could also be affected by the annealing temperature 8 and PbO content. 14 In addition, adding a second phase in AFE films can also improve AFE properties and the energy storage capacity.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of energy storage density in antiferroelectric PbZrO₃films via the incorporation of gold nanoparticles

Wang

Bai

et al. 2019

J Am Ceram Soc

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In this work, antiferroelectric Au–PbZrO3 (Au–PZO) nanocomposite thin films were prepared by chemical solution deposition (CSD), and the effects of Au concentration on the antiferroelectric properties and the recoverable energy density were investigated. The results showed that the optimal Au concentration in the Au–PZO nanocomposite thin films was about 1 mol% for structural and electric properties. In the Au–PZO nanocomposite thin films with 1 mol% Au, Au nanoparticles (NPs) were distributed uniformly in the perovskite PZO matrix. Moreover, the recoverable energy density was 10.8 J/cm3 at 600 kV/cm, which is 42% higher than that of the pure PZO films. The results demonstrate that adding an appropriate amount of noble metal NPs in antiferroelectric thin films is an effective method to improve the energy storage properties.

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Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects

Cited by 19 publications

References 11 publications

Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb_1−xBa_x)ZrO₃ Ceramics

Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb_1−xBa_x)ZrO₃ Ceramics

Electrical and Energy Storage Performance of Eu‐Doped PbZrO₃ Thin Films with Different Gradient Sequences

Enhancement of energy storage density in antiferroelectric PbZrO₃films via the incorporation of gold nanoparticles

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Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects

Cited by 19 publications

References 11 publications

Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb1−xBax)ZrO3 Ceramics

Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb1−xBax)ZrO3 Ceramics

Electrical and Energy Storage Performance of Eu‐Doped PbZrO3 Thin Films with Different Gradient Sequences

Enhancement of energy storage density in antiferroelectric PbZrO3 films via the incorporation of gold nanoparticles

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Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb_1−xBa_x)ZrO₃ Ceramics

Oxygen‐Vacancy‐Related High Temperature Dielectric Relaxation in (Pb_1−xBa_x)ZrO₃ Ceramics

Electrical and Energy Storage Performance of Eu‐Doped PbZrO₃ Thin Films with Different Gradient Sequences

Enhancement of energy storage density in antiferroelectric PbZrO₃films via the incorporation of gold nanoparticles