The electrical properties of chrome nitride (Cr-N) films have been investigated for application to cryogenic temperature sensors. The films were deposited on silica substrates by RF magnetron sputtering under various total pressures without substrate heating. The electrical resistivity at room temperature increased from 1:4 Â 10 À3 -1:7 Â 10 À3 to 3:4 Â 10 À3 -4:0 Â 10 À3 cm as the total pressure increased. X-ray diffraction measurements revealed that the crystallinity was improved in the high-total-pressure region. The temperature dependence of the electrical resistivity for Cr-N films exhibited semiconducting behavior. The slope of the electrical resistivity versus temperature increased with increasing total pressure. When a magnetic field was applied parallel to the current direction, the change in magnetoresistance at 3.7 K for Cr-N films was less than 1% in the range of 0 to 10 T. The results indicated that temperature sensors made of Cr-N films are available in high magnetic fields.