Abstract:Recently, conditions have been defined for the growth of mirror-smooth layers of Ge on either Ge or semi-insulating GaAs by the GeI~ disproportionation reaction. In attempting to dope such layers with p-type impurities under the defined surface-rate-limited growth conditions, it was observed that order-of-magnitude decreases in resistivity occurred on heating the grown layers to temperatures higher than the original growth temperature. This indicated that impurities were initially incorporated in an electrical… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.