An abrupt avalanche breakdown in GaAs/Ge heterojunctions

Jain, F.; Melehy, M. A.

doi:10.1080/00207217508920458

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1975

1976

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Depletion layer characteristics of heterojunctions with built-in homojunction

Nahar

Nagchoudhuri²

1976

Phys. Stat. Sol. (a)

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Expressions are derived for the electric field, potential, depletion width, and capacitance for a heterojunction with a built‐in homojunction due to interdiffusion including the effects of interface states at the metallurgical junction. It is found that when the total interface charge is equal to the total excess charge stored in the interdiffused region, a maximum for the apparent built‐in potential is obtained. This is always greater than the built‐in potential of the system and increases in a square law fashion with the length of the interdiffused region.

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Depletion layer characteristics of heterojunctions with built-in homojunction

Nahar

Nagchoudhuri²

1976

Phys. Stat. Sol. (a)

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Epitaxy

Agajanian¹

1976

Semiconducting Devices

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New type of homointegrated and heterointegrated circuits

Jain

1975

Applied Physics Letters

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The use of GeO2 as a stable mask for the selective growth of epitaxial Ge layers through unmasked windows on Ge substrates or on previously deposited Ge layers in GaAs substrates is here described. In both cases, the Ge epitaxial layers have been grown at a relatively low temperature, 330–420 °C, using the GeI2 disproportionation reaction. The surfaces of the oxide and the Ge layers grown in regions surrounded by GeO2 appear to be mirror smooth when observed with a scanning electron microscope up to 11 500× magnification. The oxide-germanium boundary has been found to be free from preferential growth of Ge. New applications of this technique to Ge homointegrated circuits (e.g., Ge layers grown on Ge-or Cr-doped semiinsulating GaAs substrates) and Ge/GaAs heterointegrated circuits are discussed. Also described is the possibility to integrate other materials and new heterojunction devices compatible with Ge and several other devices which are not feasible in Si alone.

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An abrupt avalanche breakdown in GaAs/Ge heterojunctions

Cited by 3 publications

References 8 publications

Depletion layer characteristics of heterojunctions with built-in homojunction

Depletion layer characteristics of heterojunctions with built-in homojunction

Epitaxy

New type of homointegrated and heterointegrated circuits

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