Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Świetlik, T.; Franssen, G.; Wiśniewski, P.; Krukowski, S.; Łepkowski, S. P.; Marona, Ł.; Leszczyński, M.; Prystawko, P.; Grzegory, I.; Suski, T.; Porowski, S.; Perlin, P.; Czernecki, R.; Bering-Staniszewska, A.; Eliseev, P G

doi:10.1063/1.2177368

Cited by 27 publications

(15 citation statements)

References 12 publications

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“…This anomaly has already been reported for InGaN lasers, [16][17][18] nonuniform carrier distribution in the quantum wells of InGaN LDs has been used to account for the origin of the phenomenon. The explanation given in Ref.…”

Section: Experimental Setup and Resultsmentioning

confidence: 81%

“…Also simulations and experimental results for single wide QW InGaN laser structure with respect to thermal stability discussion were reported by Swietlik et al 16 The results were tentatively explained through the mechanisms of carrier loss decrease with increasing temperature -the electron current overflow reducing lasers efficiency is enhanced by ballistic transport of electrons through the active region. Simultaneously the probability of the transport is higher at low temperatures.…”

Section: Experimental Setup and Resultsmentioning

confidence: 81%

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16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

et al. 2008

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We report temperature tuning of pulsed operated InGaN LDs (5x500µm stripe, grown on low-dislocation, high-pressure grown GaN substrates). The devices are characterized by a rather weak temperature dependence of the threshold current. A very broad temperature tuning range of 16 nm was obtained with increase of operation temperature by 200 K. We were able to tune the diode under test from the initial wavelength of 415 nm at room temperature up to 431 nm at 201 • C. We observed multimode emission and mode hopping with temperature increase. At 201 • C the laser's threshold current doubled and the slope efficiency of the L-I curve dropped by 35%. After thermally cycling the device no substantial degradation was noticed. These results demonstrate the potential usage of temperature tuning of nitride-based laser diodes for atomic spectroscopy -related applications.

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Section: Experimental Setup and Resultsmentioning

confidence: 81%

Section: Experimental Setup and Resultsmentioning

confidence: 81%

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

et al. 2008

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“…[1] In former publications of other groups already several characteristics of temperature dependence of the laser threshold current of laser diodes are discussed. So characteristic temperatures T 0 of 235K for 405nm [2], 300K [3] for 415nm, 140K [4] for 445nm, even negative values [5] and 170K [6] have been reported. The variety of those reported values show the high importance of the right mixing of the influencing factors to realize a stable laser diode for mobile projection.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of blue InGaN lasers

et al. 2009

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True blue lasers with wavelengths of ~450 nm are of great interest for full color laser projection. These kind of applications usually require high output power and, in particular, an excellent wall plug efficiency within a wide temperature range. In this paper we therefore present experimental and theoretical investigations of the temperature behavior of 60mW InGaN lasers in a range of -10 °C to 100 °C.The laser parameters threshold current density, slope efficiency and operating voltage describe the wall plug efficiency of the device. The slope efficiency does not show any significant temperature dependence which is due to an almost temperature independent injection efficiency in the temperature range that is of interest for most commercial applications. In contrast, the laser threshold current density increases with temperature and we determine a characteristic temperature T 0 of about 141K for our devices emitting at 445nm. This increasing threshold current density can be explained by lower gain of the quantum wells at higher temperature. Furthermore, Auger recombination influences the threshold as verified by simulations. The second electro-optical parameter is the electrical voltage, which is dominated by electrical barriers. The voltage decreases with increasing temperature and compensates the increasing threshold current resulting in a nearly constant high wall plug efficiency of 13% between -10°C and 100°C.

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“…In 405 nm-emitting blue-violet LDs, relatively high characteristic temperature of >150 K has been typically reported. Recently, high T 0 of ~300 K has been demonstrated from 415 nm-emitting GaN LDs [5].…”

Section: Introductionmentioning

confidence: 99%

Negative characteristic temperature of InGaN blue multiple‐quantum‐well laser diodes

Ryu

Lee

et al. 2007

Phys. Status Solidi (c)

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PACS 42.55. Px, 42.60.Lh We report anomalous temperature characteristics of InGaN laser diodes (LDs) emitting around 450 nm. Our blue LD shows negative characteristic temperature in the usual operation temperature range from 20 °C to 80 °C. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, as deduced from the simulation of carrier density and optical gain. In addition, it is found that wall plug efficiency of the blue LD is even improved as temperature increases.

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Anomalous temperature characteristics of single wide quantum well InGaN laser diode

Cited by 27 publications

References 12 publications

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase

Temperature dependence of blue InGaN lasers

Negative characteristic temperature of InGaN blue multiple‐quantum‐well laser diodes

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