1997
DOI: 10.1063/1.364666
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Anomalous magnetoresistance in antiferromagnetic polycrystalline materials R2Ni3Si5 (R=rare earth)

Abstract: Magnetoresistance (MR) studies on polycrystalline R2Ni3Si5, (R=Y, rare earth) which order antiferromagnetically at low temperatures, are reported here. MR of the Nd, Sm, and Tb members of the series exhibit positive giant magnetoresistance, largest among polycrystalline materials (85%, 75%, and 58% for Tb2Ni3Si5, Sm2Ni3Si5, and Nd2Ni3Si5, respectively, at 4.4 K in a field of 45 kG). These materials have, to the best of our knowledge, the largest positive GMR reported ever for any bulk polycrystalline compounds… Show more

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Cited by 24 publications
(8 citation statements)
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“…Below this temperature, the magnetoresistance changes its sign and magnitude. This is a typical picture of the modification of the scattering rate in the vicinity of the magnetic ordering temperature [56][57][58] ; above T N the reduction of resistance can be attributed to the field induced ordering of the local magnetic moments, resulting in the quenching of the spin fluctuations and effectively a decrease of the related scattering mechanism. On the other side of the transition, below T N , the magnetic field induces a partial reorientation of the local spins and perturbs the antiferromagnetic order, which results in the increase of the scattering rate and, consequently, of the electrical resistance.…”
Section: Resultsmentioning
confidence: 99%
“…Below this temperature, the magnetoresistance changes its sign and magnitude. This is a typical picture of the modification of the scattering rate in the vicinity of the magnetic ordering temperature [56][57][58] ; above T N the reduction of resistance can be attributed to the field induced ordering of the local magnetic moments, resulting in the quenching of the spin fluctuations and effectively a decrease of the related scattering mechanism. On the other side of the transition, below T N , the magnetic field induces a partial reorientation of the local spins and perturbs the antiferromagnetic order, which results in the increase of the scattering rate and, consequently, of the electrical resistance.…”
Section: Resultsmentioning
confidence: 99%
“…This is in contrast to the antiferromagnetic polycrystalline materials R 2 Ni 3 Si 5 (Rϭrare earth͒ where positive giant magnetoresistance is shown and a metamagnetic transition and short-range ferromagnetic correlations are responsible for the magnetoresistance. 18 In fact, most antiferromagnetic materials have been shown to exhibit positive magnetoresistance. 19,20 The contribution of spin fluctuation from the magnetic polarons may be responsible in this system.…”
Section: Resistivitymentioning
confidence: 99%
“…Inset: expanded view for the low temperature region to highlight the collision of AFM and SC regions at a possible quantum critical point marked by red arrow. 5b)) however, the CDW transition is no longer observed, thus the spin fluctuations are expected to be the main driving force of the magnetoresistance [57][58][59] . The application of a magnetic field reduces the height of the resistivity hump observed below T N , which can be attributed to a partial reorientation of the magnetic moments and a reduction of the magnetic entropy.…”
Section: Resultsmentioning
confidence: 99%