Anodic Oxide Films

Dell'Oca, C. J.; Pulfrey, D.L.; Young, L.

doi:10.1016/b978-0-12-533006-0.50008-6

Cited by 94 publications

(70 citation statements)

References 152 publications

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“…(2). The thickness of the Ta anodic oxide is known to be linearly related to the preparation potential 33) and that of the Ta anodic oxide prepared at 10 V in citric acid solution is determined to be ca. 22 nm by ellipsometry regardless of citric acid concentration.…”

Section: Resultsmentioning

confidence: 99%

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

Kim

Uosaki

2013

Journal of Electrochemical Science and Technology

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ABSTRACT:Tantalum anodic oxide film was prepared in citric acid solution of various concentrations and the prepared Ta anodic oxide film was characterized by various electrochemical techniques and X-ray photoelectron spectroscopy (XPS). The prepared Ta anodic oxide film showed typical n-type semiconducting properties and the dielectric properties were strongly dependent on the citric acid concentration. The variation of electrochemical and electronic properties was explained in terms of electrolyte anion incorporation into the anodic oxide film, which was supported by XPS measurements.

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Section: Resultsmentioning

confidence: 99%

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

Kim

Uosaki

2013

Journal of Electrochemical Science and Technology

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“…Recent reviews found difficulties both in the definition of breakdown and in the interpretation of the processes (2)(3)(4). Several mechanisms were proposed to explain breakdown, such as fissure formation in the oxide (5), or local crystallization in the amorphous insulator.…”

mentioning

confidence: 99%

Electrical Breakdown: I . During the Anodic Growth of Tantalum Pentoxide

Kadary

Klein

1980

J. Electrochem. Soc.

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Observations are presented on breakdown events during the anodic growth of tantalum pentoxide in characteristics which plot the rate of breakdown as function of oxide thickness at constant field, F . The characteristics shift to lower thicknesses for an increase in field, or a decrease in temperature. The breakdown process is interpreted by the stochastic succession of avalanche breakdown model. An approximate relation was derived for the rate of breakdown as function of insulator thickness. This relation could be well fitted to experimental data at various fields. The fitting procedure permits the evaluation of the coefficient of impact ionization α, finding for a set of anodizations α=4.4×106expfalse(−21.5/Ffalse)/normalcm with F in MV/cm, in the range of fields 6.1–6.7 MV/cm. There is an uncertainty of roughly ±10% in α, due to shallow minima in fitting procedures, to fluctuations in the rate of breakdown, and to some uncertainty in the magnitude of F .

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“…Models Consistent with Constant-field Transients The correct model for the ionic conduction process involved in the growth of anodic films is uncertain (1). It has been suggested by Bean, Fisher, and Vermilyea (2) that the concentration of mobile ions is field-dependent.…”

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confidence: 99%

Theory of Ionic Conduction in Solids

Young¹

1972

Can. J. Chem.

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When a constant field in the lo6 V cm-I range is applied to annealed anodic oxide films the ion current builds up in accelerating fashion. It is shown that a model in which the ions move through channels in the oxide and in which the moving ions clear the initially blocked channels reproduces the general form of the ion current us. time behavior. Dignam's theory of this process is discussed. A recent claim that considerations of mean free path render inapplicable to these films models in which the concentration of ions changes with field due to homogeneous generation of Frenkel defects is shown to be unjustified.A further observed phenomenon in which the latent ionic conductivity of the films decays at zero field is also discussed in terms of the competing models.Quand un champ constant dans le domaine de lo6 V cm-' est applique a des films d'oxyde anodique aprts traitment thermique, le courant ionique s'ttablit d'une faqon acctltrte. On montre qu'un modtle dans lequel les ions se dtplacent travers les canaux de I'oxyde tout en dtgageant les canaux initialement bloqubs, reproduit la forme gtntrale d'un courant ionique dans le temps. La thtorie de Dignam sur ce processus est discutte. Rtcemment, on a dtclart que a partir de considtrations sur le libre parcous moyen on ne peut appliquer a ces films les modtles dans lesquels la concentration des ions change avec le champ en raison de la gtntration homogtne des dtfauts de Frenkel. On montre que ceci est injustifit. Un phtnomene observt plus avant dans lequel la conductivitt ionique latente des films dtcroit a champ nul, est aussi discute en termes de modtles mis en compktition.

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Anodic Oxide Films

Cited by 94 publications

References 152 publications

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

Preparation of Tantalum Anodic Oxide Film in Citric Acid Solution - Evidence and Effects of Citrate Anion Incorporation

Electrical Breakdown: I . During the Anodic Growth of Tantalum Pentoxide

Theory of Ionic Conduction in Solids

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