Anodic oxidation of bismuth in H2SO4 solutions

Ammar, I. A.; Khalil, Munawar

doi:10.1016/0013-4686(71)80011-7

Cited by 37 publications

(25 citation statements)

References 16 publications

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“…However, in 0.05 M solutions of H3P04. NaH2P04, Na:HPOd, Na7POa, ammonium borate, benzoate, and tartrate, Bi give5 true dielectric breakdown when the metal is polarized at 2 mAicm', and polarization is continued for 7 to 15 min dependent on the electrolyte used (33). The amplitude of oscillations in potential lies between 5 and 10 V, and sparking starts after the anode potential has risen by 10. .…”

Section: Dielectric Breakdownmentioning

confidence: 99%

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Galvanostatic formation of barrier‐type Anodic oxides

Ammar

Darwish

Khalil

1981

Materialwissenschaft Werkst

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Experimental Factors Affecting Oxide Growth Results of galvanostatic anodization of various metals with varying valve‐metal behaviour including Nb, Ta, Zr, Ti, Al, W, Te, Sb, and Bi are compiled and compared with respect to the effect of various experimental factors such as surface pretreatment, stirring, solution composition, temperature of the bath, on the efficiency of oxide growth relative to that for other anodic processes. It is concluded that all of the above factors play an important role in the anodization of the non‐typical valve metals, particularly Sb, Bi and W. Typical anodic charging curves associated with the process of oxide growth are given for several valve metals. Experimental data relevant to the phenomena of oxide breakdown are recorded and compared. The results indicate that the mechanism of breakdown varies for the same metal with variations in the experimental conditions.

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Section: Dielectric Breakdownmentioning

confidence: 99%

“…0.05 N H2S04 at 200 pA/cm2 and 30 "C using (32): electropolishing, mechanical polishing, pickling (etching), and cathodic reduction. Electropolishing has been performed in a bath composed of 10 vol methanol, 10 vol H3P04 (S.G 1.75) and 3 vol conc HCI at 100 mA/cm2 for 1 min with a Pt cathode.…”

Section: Surface Pretreatmentmentioning

confidence: 99%

Galvanostatic formation of barrier‐type Anodic oxides

Ammar

Darwish

Khalil

1981

Materialwissenschaft Werkst

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“…During polarization, the anodic current increases until reaching a steady state value, which remains nearly constant in a broad potential range (I). This steady state current is associated with the bismuth oxidation to produce the Bi 2 O 3 film growth, according to the overall reaction [8,9,12]:…”

Section: Electroreduction Of Thin B 2 O 3 Filmsmentioning

confidence: 99%

“…The study of cathodic behavior of the Bi/Bi 2 O 3 /electrolyte interphase had received less attention [5,6] than the research of the anodic oxide growth [5,[7][8][9][10][11][12][13][14][15][16][17][18][19][20], although the cathodic polarization of bismuth electrodes is frequently used to obtain fresh metallic surfaces [5,14,20]. Based on qualitative evidence, Williams et al [5] have suggested that the electroreduction of Bi 2 O 3 films occurs by the generation of metallic layer at the oxide/electrolyte interface, which grows inwards at the expense of the oxide layer.…”

Section: Introductionmentioning

confidence: 99%

Cathodic behavior of bismuth. I. Ellipsometric study of the electroreduction of thin Bi2O3 films

Pérez

Teijelo

2005

Journal of Electroanalytical Chemistry

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“…[2][3][4][5]. Nevertheless, the study of the cathodic behavior of the Bi/Bi 2 O 3 /electrolyte interphase had received less attention [6] than the growth of the anodic bismuth oxide [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Based on qualitative evidence, Williams et al suggested that the electroreduction of Bi 2 O 3 films occurs by the generation of a metallic layer at the oxide/electrolyte interface, which grows inwards at the expense of the oxide layer [6].…”

Section: Introductionmentioning

confidence: 99%