2002
DOI: 10.1016/s0013-4686(02)00141-x
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Anodic film growth on tantalum in dilute phosphoric acid solution at 20 and 85°C

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Cited by 42 publications
(36 citation statements)
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“…An increase in electrolyte temperature resulted in a decrease of the anodic forming voltage and current efficiency. The electric field strength decreases with increasing temperature and decreasing current density, [21] which is confirmed by the present results (Figs 10 and 11). Therefore, microstructural differences are expected in the oxidized film layers formed at different electrolyte temperatures.…”
Section: Resultssupporting
confidence: 90%
“…An increase in electrolyte temperature resulted in a decrease of the anodic forming voltage and current efficiency. The electric field strength decreases with increasing temperature and decreasing current density, [21] which is confirmed by the present results (Figs 10 and 11). Therefore, microstructural differences are expected in the oxidized film layers formed at different electrolyte temperatures.…”
Section: Resultssupporting
confidence: 90%
“…The incorporated phosphorus species were neglected in the quantitative RBS analysis, due to low sensitivity, but in accord with previous studies [16][17], the phosphorus content in anodic oxide films formed on valve metals in phosphoric acid is usually a few atomic percent. Thus, the similar phosphorus content is presumed also in the present anodic oxide films.…”
Section: Resultsmentioning
confidence: 85%
“…The outer layer, which accounts for about 12 % of the film thickness, is composed of ZrO 2 , essentially free from tungsten species, whereas the remaining film region contains both zirconium and tungsten species. In addition, phosphate anions are incorporated in the outer half of the film thickness, similar to the well-studied amorphous anodic oxide films formed on niobium [15] and tantalum [16] in phosphoric acid. The depth distribution of each element was confirmed by depth-profile analysis with glow-discharge Figure 1.…”
mentioning
confidence: 84%