2010
DOI: 10.1002/adfm.200901045
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Anode Interfacial Tuning via Electron‐Blocking/Hole‐Transport Layers and Indium Tin Oxide Surface Treatment in Bulk‐Heterojunction Organic Photovoltaic Cells

Abstract: The effects of anode/active layer interface modification in bulk‐heterojunction organic photovoltaic (OPV) cells is investigated using poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) and/or a hole‐transporting/electron‐blocking blend of 4,4′‐bis[(p‐trichlorosilylpropylphenyl)‐phenylamino]biphenyl (TPDSi2) and poly[9,9‐dioctylfluorene‐co‐N‐[4‐(3‐methylpropyl)]‐diphenylamine] (TFB) as interfacial layers (IFLs). Current–voltage data in the dark and AM1.5G light show that the TPDSi2:TFB IFL yi… Show more

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Cited by 179 publications
(185 citation statements)
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References 128 publications
(184 reference statements)
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“…It is possibly through the reduction of the concentration of oxygen ARTICLE vacancy and therefore a downshift of Fermi level 31 . It has already been confirmed that UVO treatment has an effect on electrical and photovoltaic properties of metal oxides 28,29 . A reduced electron concentration of the FTO surface layer is expected to lower interfacial recombination and improve V OC .…”
Section: Resultsmentioning
confidence: 82%
See 1 more Smart Citation
“…It is possibly through the reduction of the concentration of oxygen ARTICLE vacancy and therefore a downshift of Fermi level 31 . It has already been confirmed that UVO treatment has an effect on electrical and photovoltaic properties of metal oxides 28,29 . A reduced electron concentration of the FTO surface layer is expected to lower interfacial recombination and improve V OC .…”
Section: Resultsmentioning
confidence: 82%
“…The improved coverage should reduce the amount of direct contact between the FTO and the HTL, which should result in increased R sh and carrier lifetime, and therefore V OC . Furthermore, UVO treatment has also been widely reported to increase the work functions of metal oxides [28][29][30][31] . It is possibly through the reduction of the concentration of oxygen ARTICLE vacancy and therefore a downshift of Fermi level 31 .…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, for larger positive voltage, the conductivity is much higher than other two diodes, and ohmic transport is observed for the applied voltage of more than 4 V, which demonstrates the validity of modifying anode to extraction of holes in organic diodes by using a buffer layer of high work function. [26,27] In conclusion, we realized the tuning of band-bending of pentacene by using the substrate of different work function, downward bending with a low work function, flat band with a middle work function, and upward bending with a high work function. The formation of band-bending was explained by the electrostatic potential according to the position of Fermi level.…”
Section: Wwwadvelectronicmatdementioning
confidence: 99%
“…In addition to aforementioned IFL materials types, some other classes of materials have also been developed and incorporated into PSCs, mainly including self-assembly monolayers (SAMs) [121][122][123][124], crosslinked semiconducting blends [125,126], multifunctional quantum-dot monolayers [127], and inorganic salts [128]. As emerging IFLs for polymer solar cells, these materials have shown some promising characteristics for performance enhancement and stability improvement.…”
Section: Other Interfacial Layer Materialsmentioning
confidence: 99%