Annealing temperature effects on optical and photoelectric properties of sputtered indium-doped PbSe thin films

Aqueous‐Phase Synthesis of Size‐Tunable PbSe Nanocubes at Room Temperature for Optical Property Characterization

“…Figure S4 shows an X‐ray photoelectron spectrum (XPS) of synthesized PbSe with 30 nm cubes to verify the particle composition. The Pb 4f peaks at 137.7 and 142.6 eV and the Se 3d peaks at 53.7 and 54.5 eV confirm the exclusive presence of PbSe . The S 2p and O 1s peak positions do not support the formation of PbS with known S 2p peaks at 160.3 and 161.5 eV or PbO with an O 1s peak at 528.9 eV …”

“…The Pb 4f peaks at 137.7 and 142.6 eV and the Se 3d peaks at 53.7 and 54.5 eV confirm the exclusive presence of PbSe. [17,21] The S2pa nd O1sp eak positions do not support the formation of PbS with known S2p peaks at 160.3 and 161.5 eV or PbO with an O1sp eak at 528.9 eV. [22,23] Because of the big change in solution color during the formationo ft hese PbSe nanocubes, it wasu seful to take photographsd uring the introduction of the reagent and crystal growth process.…”

Perovskite Thin Film Synthesised from Sputtered Lead Sulphide

“…More complex structures, such as those used in the manufacture of highly efficient solar cells 37 , 38 , with the inclusion of mixed cations (Cs, MA and FA) and halides (I, Br), seem to be also feasible. Since sputtering is a very well-known technique for thin films deposition 39 – 43 , and its application on industrial scale 42 , 44 is already available in the market, this approach has potential to scale-up the perovskite solar cells production.…”

Enhanced performance in uncooled n-CdSe/p-PbSe photovoltaic detectors by high-temperature chloride passivation

“…Many approaches have been carried out over the past several decades to eliminate or reduce those defects, including buffer layer and strained layer techniques, 17 lateral growth, selected area growth, 21,22 and ex situ annealing passivation techniques, 23 such as oxygen (O 2 ), 24,25 calcium difluoride (CaF 2 ), 26 native sulfide 27 and halide ions passivation. 28,29 Among them, high-temperature (>300 °C) oxygen passivation annealing (HTOP) is a near-optimum solution for a PV detector performance breakthrough.…”

“…17 However, the device performance is lower than both the theoretical limit and the PbSe PC detectors' performances, which is limited by high Shockley-Read Hall recombination associated with high dislocation density (>10 8 cm 2 ) and high carrier concentration (typical 5 Â 10 17 cm À3 ) caused by large mismatch in lattice constant and coefficient of thermal expansion between lead-salt lms and Si substrates. 19 Many approaches have been carried out over the past several decades to eliminate or reduce those defects, including buffer layer and strained layer techniques, 17 lateral growth, selected area growth, 21,22 and ex situ annealing passivation techniques, 23 such as oxygen (O 2 ), 24,25 calcium diuoride (CaF 2 ), 26 native sulde 27 and halide ions passivation. 28,29 Among them, hightemperature (>300 C) oxygen passivation annealing (HTOP) is a near-optimum solution for a PV detector performance breakthrough.…”