Annealing of the Sb-vacancy and a closely related radiation induced defect in n -type germanium

Hybrid functional study of hydrogen passivation in carbon-oxygen related defect complexes in silicon

“…i the experimental level agrees well with a predicted acceptor level. For the C i O i H i , by ref[3] a level attributed to the C i O i H i agrees reasonably well with the predicted donor level, while the predicted acceptor level was observed by Barnard et al[33]. The C s O i is probably too unstable to be observed.…”

“…For the C i O i and C i O i H i only the donor level predicted in the lower half of the band gap was observed, while for the C s C i only the predicted acceptor level was observed, but the predicted acceptor level close to the valence band was not observed. Recently, Barnard et al[33] observed defects believed to be the C i H i and C i O i H i . In the case of the C i H…”

Structural Insights on Microwave-Synthesized Antimony-Doped Germanium Nanocrystals

“…EXAFS shows that at 0.5 mol % doping the majority of the Sb atoms reside within the particle and not at the surface, indicating the increase in hole conduction does not derive from defect states generated by Sb at the surface. Antimony-vacancy defects (Sb–V complex or E-centers) in germanium are well studied and the conversion of bulk Ge from n- to p- type has been observed after Sb–V defect generation by electron- or γ-irradiation. − EXAFS supports the existence of these defects; this, combined with the increase in hole conduction, lead us to suspect that the inclusion of Sb as a typical n -type dopant has instead resulted in p- type doping of the Ge NCs. However, further studies must be done to confirm this hypothesis, in addition to determining the charge state of the Sb–V defects and the transport properties of these materials.…”