Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy

Dekker, J.; Tukiainen, Antti; Xiang, N.; Orsila, S.; Saarinen, M.; Toivonen, M.; Pessa, M.; Tkachenko, Nikolay V.; Lemmetyinen, Helge

doi:10.1063/1.371283

Cited by 35 publications

(18 citation statements)

References 20 publications

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“…The introduction rate of the midgap level may be compared with the rate of 12 cm Ϫ1 seen in p-GaInP samples prepared and tested in a similar fashion. 1 However, these values may require correction, as will be discussed in Sec. VI.…”

Section: Experimental Methods: Sample Preparation and Dlts Measurmentioning

confidence: 99%

Cation and anion vacancies in proton irradiated GaInP

Dekker

Oila

Saarinen

et al. 2002

Journal of Applied Physics

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Defects in electron irradiated GaInP grown by molecular beam epitaxy have been investigated using deep level transient spectroscopy (DLTS) and positron annihilation spectroscopy (PAS). PAS measurements indicate that vacancies are introduced at a high rate. Core annihilation curves, compared with theoretical calculations, are used to identify the principal defect in n-GaInP as cation vacancies, while phosphorus vacancies are seen in both undoped and n-type GaInP. The concentrations of defects obtained by PAS and Hall are in good agreement with each other. DLTS gives much lower values, possibly due to assumptions in the C–V analysis. These results give support to the identification of the midgap deep level observed using DLTS in irradiated and as-grown n-type and undoped GaInP as the phosphorus vacancy.

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Section: Experimental Methods: Sample Preparation and Dlts Measurmentioning

confidence: 99%

Cation and anion vacancies in proton irradiated GaInP

Dekker

Oila

Saarinen

et al. 2002

Journal of Applied Physics

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“…The reduction in FWHM can be related to the removal of oxygen-related defects as in Ref. 11. Here, we are using a similar design to our previously reported intermixing process, 7 but with different growth.…”

Section: Resultsmentioning

confidence: 93%

Effect of annealing InGaP/InAlGaP laser structure at 950°C on laser characteristics

Al-Jabr¹,

Mishra²,

Majid³

et al. 2016

J. Nanophoton

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Abstract. We achieved considerable laser diode (LD) improvement after annealing InGaP/ InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (I th ), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (η i ), from 63% to 68%, and increased internal losses α i , from 14.3 to 18.6 cm −1 . Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…On the other hand, it is also known that the wide range of operating temperature of monolithic multijunction solar cells, from below-zero to over 100°C, can lead to spatial fluctuations of the sublattices. Problem arising from thermal equilibrium is inherent to the so-called annealing effects on the ordered and disordered subcells, resulting in a shift and broadening of the emission spectra [10,11]. Accordingly, a good-understanding of how ordered and disordered subcells behave in response to changes in temperature is necessary for optimizing device performance at any operating temperature [12][13][14].…”

Section: Introductionmentioning

confidence: 99%