Annealing of Si damage caused by reactive ion etching in SF6 gas mixtures

Pinto, R.; Babu, R. Sachidananda; Bhattacharya, P. K.

doi:10.1063/1.96878

Cited by 13 publications

(6 citation statements)

References 7 publications

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“…The need for hazardous gases, a high thermal budget, and high vacuum conditions are avoided with MacEtch, while otherwise required not only in conventional top-down approaches such as reactive ion etching (RIE), deep-RIE (Bosch process), and inductively couple plasma (ICP)-RIE, 23 but also in the case of bottom-up crystal growth methods such as selective-area epitaxy (SAE) 24,25 or metal-seeded, vapor-liquid-solid (VLS) epitaxy of nanowire (NW) arrays. 26,27 Furthermore, MacEtch relieves the potential for ion-beam-induced damage or plasma-induced charging damage that may result from RIE processes, 28,29 and eliminates the likelihood of forming non-uniform sidewall features (scalloping) that may result from iterative Bosch etching. 30 Contrary to conventional masked RIE methods, achievable etch depths are not limited by the lateral extent of the masked features in the MacEtch approach, thereby allowing for the formation of high aspect-ratio features.…”

Section: Introductionmentioning

confidence: 98%

GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

Mohseni

Kim

Zhao

et al. 2013

Journal of Applied Physics

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We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-i-n junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopillar morphologies is demonstrated, simply through modification of the etching conditions. Optical emission enhancement from the MacEtched p-i-n GaAs nanopillar LED is observed, relative to the non-etched planar counterpart, through room-temperature photoluminescence and electroluminescence characterization.

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Section: Introductionmentioning

confidence: 98%

GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

Mohseni

Kim

Zhao

et al. 2013

Journal of Applied Physics

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“…Patterned wet-etching is more cost-effective in that it is solution-based and can be performed in conventional semiconductor wet benches, although it lacks the ability to yield high aspect-ratio structures due to it being isotropic or having crystallographic dependences . In contrast, RIE is a dry-etching technique that can generate high aspect-ratio geometries at the expense of exposing the target material to high energy ion bombardment, which causes sidewall damage and detrimental lattice defects in addition to the intended material removal. , Moreover, RIE uses hazardous gases and is performed under high-vacuum conditions at elevated process temperatures, making it less ideal for process simplification and cost reduction …”

Section: Introductionmentioning

confidence: 99%

“…6 In contrast, RIE is a dry-etching technique that can generate high aspect-ratio geometries at the expense of exposing the target material to high energy ion bombardment, which causes sidewall damage and detrimental lattice defects in addition to the intended material removal. 7,8 Moreover, RIE uses hazardous gases and is performed under high-vacuum conditions at elevated process temperatures, making it less ideal for process simplification and cost reduction. 6 Metal-assisted chemical etching (MacEtch, or "forward MacEtch" to distinguish it in later discussions) and inverse metal-assisted chemical etching (I-MacEtch) are top-down, solution-based fabrication methods that have been demonstrated as attractive alternatives for cost-effective generation of high aspect-ratio micro-and nanoscale semiconductor features.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In_0.49Ga_0.51P/GaAs Heteroepitaxial Films

Wilhelm

Soule

Baboli

et al. 2018

ACS Appl. Mater. Interfaces

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Metal-assisted chemical etching (MacEtch) has been established as a low-cost, benchtop, and versatile method for large-scale fabrication of semiconductor nanostructures and has been heralded as an alternative to conventional top-down approaches such as reactive-ion etching. However, extension of this technique to ternary III-V compound semiconductor alloys and heteroepitaxial systems has remained relatively unexplored. Here, Au-assisted and inverse-progression MacEtch (I-MacEtch) of the heteroepitaxial InGaP/GaAs material system is demonstrated, along with a method for fabricating suspended InGaP nanofoils of tunable thickness in solutions of hydrofluoric acid (HF) and hydrogen peroxide (HO). A comparison between Au- and Cr-patterned samples is used to demonstrate the catalytic role of Au in the observed etching behavior. Vertical etch rates for nominally undoped, p-type, and n-type InGaP are determined to be ∼9.7, ∼8.7, and ∼8.8 nm/min, respectively. The evolution of I-MacEtch in the InGaP/GaAs system is tracked, leading to the formation of nanocavities located at the center of off-metal windows. Upon nanocavity formation, additional localized mass-transport pathways to the underlying GaAs substrate permit its rapid dissolution. Differential etch rates between the epilayer and substrate are exploited in the fabrication of InGaP nanofoils that are suspended over micro-trenches formed in the GaAs substrate. A model is provided for the observed I-MacEtch mechanism, based on an overlap of neighboring injected hole distribution profiles. The nanofabrication methodology shown here can be applied to various heteroepitaxial III-V systems and can directly impact the conventional processing of device applications in photonics, optoelectronics, photovoltaics, and nanoelectronics.

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“…Traditional top-down nanostructure fabrication methodologies include reactive-ion etching (RIE) and conventional wet-chemical etching, though these techniques come with a variety of limitations and disadvantages. , A major advantage of RIE is its directionality and ability to generate highly anisotropic geometries. However, it often requires processing at elevated temperatures with hazardous gases.…”

Section: Introductionmentioning

confidence: 99%

Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

Wilhelm

Wang

Baboli

et al. 2018

ACS Appl. Mater. Interfaces

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The ternary III-V semiconductor compound, Al GaAs, is an important material that serves a central role within a variety of nanoelectronic, optoelectronic, and photovoltaic devices. With all of its uses, the material itself poses a host of fabrication difficulties stemming from conventional top-down processing, including standard wet-chemical etching and reactive-ion etching (RIE). Metal-assisted chemical etching (MacEtch) techniques provide low-cost and benchtop methods that combine many of the advantages of RIE and wet-chemical etching, without being hindered by many of their disadvantages. Here, inverse-progression MacEtch (I-MacEtch) of Au-patterned Al GaAs is demonstrated for the first time and is exploited for the generation of vertical and ordered nanopillar arrays. The etching solution employed here consists of citric acid (CHO) and hydrogen peroxide (HO). The I-MacEtch evolution is tracked in time for Al GaAs samples with compositions defined by x = 0.55, x = 0.60, and x = 0.70. The vertical and lateral etch rates (VER and LER, respectively) are shown to be tunable with Al fraction and temperature of the etching solution, based on modification of catalytically injected hole distributions. Control over the VER/LER ratio is demonstrated by tailoring etch conditions for single-step fabrication of ordered AlGaAs nanopillar arrays with predefined aspect ratios. Maximum VER and LER values of ∼40 nm/min and ∼105 nm/min, respectively, are measured for AlGaAs at a process temperature of 65 °C. The I-MacEtch nanofabrication methodology outlined in this study may be utilized for the processing of many devices, including high electron mobility transistors, distributed Bragg reflectors, lasers, light-emitting diodes, and multijunction solar cells containing AlGaAs components.

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Annealing of Si damage caused by reactive ion etching in SF6 gas mixtures

Cited by 13 publications

References 7 publications

GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In_0.49Ga_0.51P/GaAs Heteroepitaxial Films

Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

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Annealing of Si damage caused by reactive ion etching in SF6 gas mixtures

Cited by 13 publications

References 7 publications

GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching

Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In0.49Ga0.51P/GaAs Heteroepitaxial Films

Ordered AlxGa1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching

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Product

Resources

About

Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In_0.49Ga_0.51P/GaAs Heteroepitaxial Films

Ordered Al_xGa_1–xAs Nanopillar Arrays via Inverse Metal-Assisted Chemical Etching