Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In<sub>0.49</sub>Ga<sub>0.51</sub>P/GaAs Heteroepitaxial Films

Wilhelm, Thomas; Soule, Cody W; Baboli, Mohadeseh A.; O’Connell, Christopher; Mohseni, Parsian K.

doi:10.1021/acsami.7b17555

Cited by 17 publications

(34 citation statements)

References 53 publications

(123 reference statements)

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“…The MaCE can also be applied to semiconductors other than Si, such as Ge, [146][147][148] GaAs, [149][150][151][152][153][154][155][156][157][158][159][160][161][162][163][164] Al x Ga 1−x As, [165] GaN, [166,167] GaP, [168] InP, [169][170][171][172] SiC, [173,174] and Ga 2 O 3 [175] to fabricate various nanostructures. These compound semiconductors find widespread applications in electronics, optoelectronics, and photovoltaics, etc.…”

Section: Mace Of Semiconductors Other Than Simentioning

confidence: 99%

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Srivastava

Khang

2021

Advanced Materials

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classified into two common approaches: bottom-up chemical synthesis, such as vapor-liquid-solid growth, [16][17][18][19][20] and topdown fabrication schemes. [21][22][23] This review will focus on the top-down fabrication of Si structures using a wet chemical etching technique aided with a metal catalyst, called metal-assisted chemical etching (MaCE). [24][25][26][27][28][29][30][31][32] In comparison with top down fabrication methods based on dry etching using a reactive plasma in vacuum, MaCE is less expensive and less complex. [33][34][35] MaCE is a nano-scale reductionoxidation (redox) process that usually occurs in aqueous solution where the sample to be etched is in contact with the etchant. MaCE is a simple, cost-effective, and versatile method to produce Si nanostructures; due to these attractive features, there have been many good review articles published on the process. [36][37][38][39][40][41][42] With two-decades of research of the MaCE and its innovative variations, recent studies have focused on the various applications of Si nanostructures prepared by MaCE, including photovoltaics, [43,44] thermoelectrics and piezoelectric nanogenerators, [45] energy storage, [46][47][48] nanophotonics and optoelectronics, [49] and biosensors and biomedical applications. [50][51][52] In this review, we provide an overview of the recent advances in MaCE processes and their novel applications. To differentiate this review from previous review articles, the main emphasis is on the recently developed novel MaCE processes and the macroscale structuring of Si by MaCE. We begin the review by describing new MaCE processes, particularly catalysts for MaCE. In contrast to well-known noble metal catalysts, such as Ag, Au, and Pt, carbon-based catalysts, such as graphene, graphene oxide, and carbon nanotubes, have been successfully applied as catalysts for MaCE. In addition, TiN has been found to be a catalyst for MaCE, making the whole process CMOS-compatible. Different types of etch additives, such as various alcohols and chlorides, have also been discussed, which enhance etch uniformity by increasing the wettability of etchants and suppressing the random diffusion of excessive (holes) h + by trapping them for better etch control. Recent novel variations of the MaCE process have been introduced, such as MaCE with externally applied electric or magnetic fields. The external field has a profound effect on the output of MaCE, by controlling the etch directionality and etch rate. In addition, MaCE can be combined with unconventional patterning techniques, StructuringSi, ranging from nanoscale to macroscale feature dimensions, is essential for many applications. Metal-assisted chemical etching (MaCE) has been developed as a simple, low-cost, and scalable method to produce structures across widely different dimensions. The process involves various parameters, such as catalyst, substrate doping type and level, crystallography, etchant formulation, and etch additives. Careful optimization of these parameters is the key to the succe...

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Section: Mace Of Semiconductors Other Than Simentioning

confidence: 99%

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Srivastava

Khang

2021

Advanced Materials

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“…The enhanced photodetectors with AR structures are fabricated after the removal of catalyst metal masks used for the MacEtch process. For GaAs, MacEtch using gold (Au) as catalyst takes place in the forward direction, producing high aspect ratio arrays of 3D structures [ 32–40 ] by engraving the metal catalyst pattern into the GaAs substrate. However, the remaining metal catalyst after MacEtch can absorb the incident light and, thus, limits the performance of the photodiodes.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing

Namiki

Huang

Soares

et al. 2021

Advanced Photonics Research

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III–V semiconductor‐based photodiodes with graphene incorporated have been studied in recent years due to the attractive optoelectronic properties of graphene, including optical transparency and enhanced photoresponsivity. The photoresponsivity can be further improved by converting the semiconductor surface into a 3D antireflection (AR) structure. However, difficulties in transferring graphene on top of structured surfaces degrade the interfacial quality and limit their photoresponsivity. Herein, a high‐performance GaAs photodiode structure with self‐embedded graphene quantum dot (GQD) and simultaneously formed periodic AR 3D surface texturing is reported, all produced by a one‐step wet etching process in a solution of hydrogen fluoride (HF) and potassium permanganate (KMnO4) using graphene as a transparent mask. Compared with the planar counterpart without graphene, the photodiodes demonstrated here show an enhancement of photocurrent by 22 times, photoresponsivity by 25 times, and normalized photocurrent to dark current ratio by approximately two orders of magnitude. The improved photoresponsivity of 9.31 mA W−1 is attributed to the increased absorption from AR texturing and the enhanced heterointerface carrier transfer from GQDs to GaAs. This simple, clean yet effective method enables the monolithic incorporation of graphene and graphene‐derived materials on 3D semiconductor structures for applications across a wide range of wavelengths.

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“…Then, the substrate can be structured by patterned metal films [32,33] or etched randomly using dispersed metallic particles [24]. In recent years, several attempts aimed to extend MacEtch to III-V group semiconductors [32][33][34][35][36][37][38][39][40][41][42][43], which yield better device characteristics in light emitting diodes and solar cells compared to mainstream silicon and germanium [44,45]. GaAs structuring via MacEtch has been reported in conjunction with catalyst vacuum depositions [46], or with metal patterning [32][33][34][35][36][37][38][39][40][41] by nanoimprint lithography [47], photolithography [20], and microsphere self-assembly [48].…”

Section: Introductionmentioning

confidence: 99%

Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling

Lova

Soci

2020

Micromachines

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Thanks to its excellent semiconductor properties, like high charge carrier mobility and absorption coefficient in the near infrared spectral region, GaAs is the material of choice for thin film photovoltaic devices. Because of its high reflectivity, surface microstructuring is a viable approach to further enhance photon absorption of GaAs and improve photovoltaic performance. To this end, metal-assisted chemical etching represents a simple, low-cost, and easy to scale-up microstructuring method, particularly when compared to dry etching methods. In this work, we show that the etched GaAs (black GaAs) has exceptional light trapping properties inducing a 120 times lower surface reflectance than that of polished GaAs and that the structured surface favors photon recycling. As a proof of principle, we investigate photon reabsorption in hybrid GaAs:poly (3-hexylthiophene) heterointerfaces.

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Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In_0.49Ga_0.51P/GaAs Heteroepitaxial Films

Cited by 17 publications

References 53 publications

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing

Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling

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Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In0.49Ga0.51P/GaAs Heteroepitaxial Films

Cited by 17 publications

References 53 publications

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Structuring of Si into Multiple Scales by Metal‐Assisted Chemical Etching

Enhancing Performance of GaAs Photodiodes via Monolithic Integration of Self‐Formed Graphene Quantum Dots and Antireflection Surface Texturing

Black GaAs: Gold-Assisted Chemical Etching for Light Trapping and Photon Recycling

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Fabrication of Suspended III–V Nanofoils by Inverse Metal-Assisted Chemical Etching of In_0.49Ga_0.51P/GaAs Heteroepitaxial Films