Annealing of damage and stability of implanted ions in ZnO crystals

Abstract

The annealing of Bi, Cr, and Mn, implanted in ZnO, has been studied by Rutherford backscattering, ion channeling, and secondary ion mass spectroscopy. Implantation of ∼1016 ions/cm2 of any of these elements produces large concentrations of Zn interstitials, but no completely amorphous region. The temperature at which these interstitials anneal is a function of the implant species. Other defects produced by the implantation, which give rise to dechanneling and a consequent increased scattering probability in the tails of backscattering spectra, anneal at significantly higher temperature. This annealing is also a function of the implant species. Motion of the implant ions themselves does not occur when the interstitials anneal; it takes place above 700 °C for Bi and Mn, and above 1000 °C for Cr.

Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantation

“…The low solubility limit of the RE in ZnO could be explained by this behaviour, already reported by other authors [24]. For the higher fluence implantation (Fig.…”

Production and recovery of defects in phosphorus-implanted ZnO

“…The study of the production and recovery process of these defects is therefore very important for a successful doping. There have been a number of studies on the defects induced by ion implantation in ZnO using Rutherford backscattering, 12,13 photoluminescence and cathodoluminescence, 14 deep-level transient spectroscopy, 15 secondary-ion-mass spectrometry, 16 and other electrical characterization methods. 17,18 In addition to these methods, positron annihilation spectroscopy has recently emerged as a powerful tool for the study of vacancy-type defects in semiconductors.…”

Thermal stability of ion-implanted ZnO

“…6 A number of previous studies of thermal annealing exist, both for asgrown ZnO films and crystals [11][12][13] and for ion-implanted ZnO. 9,14,15 None of these studies, however, deal directly with the recrystallization of heavily damaged ZnO at high temperatures. Jeong et al 9 recently presented an annealing study of low-energy As + implants into ZnO at RT involving relatively low doses ͑10 15 cm −2 ͒.…”