Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantation

Monteiro, T.; Neves, A.J.; Carmo, M. C.; Soares, M.J.; Peres, M.; Alves, E.; Rita, E.; Wahl, Ulrich

doi:10.1016/j.spmi.2005.08.043

Cited by 31 publications

(17 citation statements)

References 23 publications

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“…The wavelength range of the broad multimode peak spans the violet and blue regions of the visible spectrum leading to a dominant bi-chromic visible emission. Similar kind of broad violent-blue emission extending from violet to blue with a distinct peak at 420 nm was reported in rare earth implanted ZnO samples [9]. The 420 nm peak corresponds to the near band-edge (NBE) emission of ZnO.…”

Section: Resultssupporting

confidence: 77%

“…Ney et al [8] have reported a broad red emission in ZnO single crystals by doping Gd 3+ , which is attributed to implantation induced disorder rather than Gd 3+ related transitions, and the emission intensity decreases with increase of Gd 3+ doping. Broad violet emission band around 3.15 eV due to RE implantation in ZnO was reported, which is assigned to the vacancy related emission [9]. Doping of Gd 3+ in ZnO exhibits radiative transition around 318 nm due to transition between the first excited 6 P 7/2 state and the 8 S 7/2 ground state, which is similar to the cathode-luminescence spectra in Gd doped GaN [10].…”

Section: Introductionmentioning

confidence: 53%

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Intense violet–blue emission and paramagnetism of nanocrystalline Gd3+ doped ZnO ceramics

et al. 2015

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Nanocrystalline Zn 1x Gd x O (x = 0, 0.02, 0.04, 0.06, and 0.08) ceramics were synthesized by ball milling and subsequent solid-state reaction. The transmission electron microscopy (TEM) micrograph of as synthesized samples revealed the formation of crystallites with an average diameter of 60 nm, and the selected area electron diffraction (SAED) pattern confirmed the formation of wurtzite structure. A red shift in the band gap was observed with increasing Gd 3+ concentration. The photoluminescence of nanocrystalline Gd 3+ doped ZnO exhibited a strong violet-blue emission. Concentration dependence of the emission intensity of Gd 3+ in ZnO was studied, and the critical concentration was found to be 4 mol% of Gd 3+ . The Gd 3+ doped ZnO exhibited paramagnetic behavior at room temperature, and the magnetic moment increased with Gd 3+ concentration.

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Section: Resultssupporting

confidence: 77%

Section: Introductionmentioning

confidence: 53%

Intense violet–blue emission and paramagnetism of nanocrystalline Gd3+ doped ZnO ceramics

et al. 2015

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“…As indicated by the RBS measurements for bulk [4] and film samples Tb ion segregation was observed which explains the absence of intraionic Tb 3+ emission. In Fig.…”

Section: Photoluminescencementioning

confidence: 76%

“…3(a) and (b)). Intraionic emission was also observed in Er implanted and annealed bulk samples [3,4]. On the other hand, no intraionic related emission was detected for the samples implanted with a fluence of 5x10…”

Section: Photoluminescencementioning

confidence: 99%

“…Nevertheless, under these conditions is difficult to detect intraionic emission and/or ion-related luminescence. Typically, in bulk samples RE ion optical activation is achieved after thermal treatments, when a huge defect density is still present, meaning that intrinsic and extrinsic impurities assume an important role on the implanted ion lattice accommodation and on its environment [4]. Furthermore, the increase of annealing temperatures promotes both the damage recovery and impurity mobility and consequently changes on photoluminescence (PL) spectra can be observed.…”

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confidence: 99%

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Luminescence and structural properties of defects in ion implanted ZnO

Monteiro

Soares

Neves

et al. 2006

Phys. Status Solidi (c)

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ZnO substrates and films were intentionally implanted with rare earth and transition metal ions. The influence of the implantation and subsequent air thermal annealing treatments on the structural and optical properties of ZnO samples were studied by using Rutherford backscattering spectrometry and low temperature photoluminescence techniques. Intraionic Tm-related emission was observed for bulk and ZnO films. Similarly, Eu and Tb-doped ZnO films follow the same trend observed in bulk samples. No intraionic related emission was observed for Eu-doped samples even being the ion in Zn sites and for the Tb-doped samples ion segregation was observed for thermal annealing temperatures above 800 o C. For the Mn-doped ZnO bulk samples the lattice recovery follows the same trend to that one observed for the Fe-doped samples, starting near 800 o C being fully recovered at 1050 o C. Although Fe 3+ was observed no intraionic Mn-related emission was detected under the used conditions.

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Effect of growth temperature on structural, electrical, and optical properties of Gd‐doped zinc oxide films

Cho

2013

Physica Status Solidi (a)

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Gd‐doped ZnO (GZO) films were deposited on glass substrates at various growth temperatures by using radio‐frequency (rf) magnetron sputtering. The experimental data showed that the growth temperature had a significant effect on the structural, optical, and electrical properties of the GZO films. The GZO film deposited at 400 °C exhibited a preferential growth orientation along the (002) plane with a thickness of 1480 nm, an average optical transmittance of 86.5% in the visible wavelength range, an optical band gap of 3.18 eV, and an electron concentration of 1.9 × 1020 cm−3, where the highest figure of merit was obtained. The increase in the figure of merit results from the decrease in the electrical resistivity with increasing growth temperature. The optical band gap energy Eg as a function of the growth temperature T, calculated by using the Tauc model and parabolic bands, is expressed as Enormalg=2.03×10−4T+3.1 eV. The results suggest that the optimum growth temperature for depositing high‐quality GZO films is 400 °C.

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Optical and structural analysis of bulk ZnO samples undoped and rare earth doped by ion implantation

Cited by 31 publications

References 23 publications

Intense violet–blue emission and paramagnetism of nanocrystalline Gd3+ doped ZnO ceramics

Intense violet–blue emission and paramagnetism of nanocrystalline Gd3+ doped ZnO ceramics

Luminescence and structural properties of defects in ion implanted ZnO

Effect of growth temperature on structural, electrical, and optical properties of Gd‐doped zinc oxide films

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