2014
DOI: 10.1016/j.solmat.2013.12.011
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Annealing-free solution-processed tungsten oxide for inverted organic solar cells

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Cited by 30 publications
(26 citation statements)
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“…[59][60][61][62] Finally, the top Ag electrode was formed via a thermal evaporation process in a vacuum chamber (under 1 × 10 −7 torr) or screen printing with Ag paste which was dried in a UV-curing system (≈1600 mJ cm −2 ) for 5 min. The cleaned ITO glasses were treated with UV-ozone (UVO) in a UVO cleaner (Ahtech LTS).…”
Section: Methodsmentioning
confidence: 99%
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“…[59][60][61][62] Finally, the top Ag electrode was formed via a thermal evaporation process in a vacuum chamber (under 1 × 10 −7 torr) or screen printing with Ag paste which was dried in a UV-curing system (≈1600 mJ cm −2 ) for 5 min. The cleaned ITO glasses were treated with UV-ozone (UVO) in a UVO cleaner (Ahtech LTS).…”
Section: Methodsmentioning
confidence: 99%
“…[59][60][61][62] For the bilayer HTLs, the WO 3 layer was formed via a slot-die coating process (typical coating speed of 0.5 m min −1 , feed rate of 0.3 m min −1 ). All processes of fabricating flexible OSC modules were conducted in ambient atmosphere.…”
Section: Fabrication Of All-solution Processed Flexible Osc Modules (mentioning
confidence: 99%
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“…These materials are commonly deposited by the evaporation process such as thermal evaporation and sputtering. Recently, solution processable and air stable nanoparticle based transition metal oxides have been studied extensively . There are many ways to create transition metal oxide film via solution process, which are divided into nanoparticle approaches, hydrolysis and sol‐gel methods .…”
Section: Solution‐processed Materials and Printing/coating Technologiesmentioning
confidence: 99%
“…Potential alternatives for aforementioned purpose are transition metal oxides, such as V 2 O 5 [23][24][25], WO 3 [26][27][28], NiO [12,29], and MoO 3 [30][31][32][33][34][35][36][37], which have necessary semiconductor property and well physiochemical stability. Among this transition metal oxides, MoO 3 is one of the promising candidates due to its nontoxicity, deep electronic state and relative lower vaporization temperature (o800°C) which can easily deposited in vacuum [37].…”
Section: Introductionmentioning
confidence: 99%