Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes

Ichihara, Tsutomu; Honda, Y.; Baba, T.; Komoda, Tsugikazu; Koshida, Nobuyoshi

doi:10.1116/1.1763893

Cited by 17 publications

(5 citation statements)

References 14 publications

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“…However, the J e of sample B performs more stably compared with sample A. The decrease of the emission current is presumably caused by the irreversible degradation of the interfacial SiO 2 films in the PS layer [33]. From our results, the uniform deposition of the metal nickel and the favorable oxidation properties can passivate the PS, which not only reduces the defect levels but also suppresses the thermal loss due to the better electrical properties of the nickel-silicon composite structure.…”

Section: Electrical Characterizationmentioning

confidence: 68%

Improved electron emission properties of the porous silicon emitter by chemical surface modification

Wang¹,

He²,

Zhang³

et al. 2017

Semicond. Sci. Technol.

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A new chemical dipping method using nickel chloride (NiCl 2 ) solution is proposed to improve the characteristics of an electron emitter based on porous silicon (PS). Two groups of PS samples were prepared, one group was then left untreated, while the other group was treated by the chemical dipping method. Energy dispersive x-ray (EDX) and x-ray photoemission spectroscopy (XPS) studies confirm the uniform filling of the reduced Ni and the formation of the SiO 2 in the chemically dipped sample. The gold electrode was sputtered on the modified PS surface and the study of J-V characteristics show that the modified samples have more favorable rectifying behavior and longer-term durability than the unmodified one. The measured results showed that the voltage threshold ∼8 V, PVCR value ∼1.08, emission current density ∼48 μA cm −2 , emission efficiency ∼0.72%, and stable emission were achieved for the modified sample; most of these electron emission characteristics were better than those from the unmodified emitter. Such improvements are mainly due to the decrease of the contact barrier height between the PS and the gold electrode, as is evident from analyzing the logarithmic J-V characteristics. The chemical dipping method is therefore expected to be a valuable technique to enhance the electron emission characteristics of the PS emitter.

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Section: Electrical Characterizationmentioning

confidence: 68%

Improved electron emission properties of the porous silicon emitter by chemical surface modification

Wang¹,

He²,

Zhang³

et al. 2017

Semicond. Sci. Technol.

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“…Then nc-Si layers were formed by conventional anodization and subsequent electrochemical oxidation (ECO) techniques as reported previously. 3,4 The ECO-treated samples were annealed at a temperature of 550°C for 1 hour in forming gas ambient (N 2 including 3% H 2 ). Finally, top electrodes were formed on the nc-Si layer.…”

Section: Methodsmentioning

confidence: 99%

“…Energetic electrons are generated via multiple-tunnel transport through a chain of nc-Si dots interconnected with thin oxide films. [1][2][3][4] The mean energy of emitted electrons is strongly affected by the nanostructure in the device where chainlike nc-Si structures are produced along columnar poly-Si grains. In the well-controlled device, the current-voltage (I-V) curves behave in the way expected from the tunneling mode with little scattering energy losses.…”

Section: Introductionmentioning

confidence: 99%

Direct excitation of xenon by ballistic electrons emitted from nanocrystalline‐silicon planar cathode and vacuum‐ultraviolet light emission

Ichihara¹,

Hatai²,

Koshida³

2010

J Soc Info Display

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Abstract— To verify the possible use of energetic electrons for direct excitation of inert gas molecules, a nanocrystalline‐silicon (nc‐Si) planar ballistic emitter is operated in a high‐pressure xenon gas ambience. Under the pulse drive, vacuum‐ultraviolet (VUV) light emission is detected without any signs of discharge. The transient behavior of the VUV light emission properly corresponds to that of the nc‐Si emitter. In accordance with quantitative analyses of electron‐emission characteristics and the VUV output, the electron‐to‐photon conversion efficiency reaches 81% in the relatively efficient emitter case. The VUV output power is mainly determined from the number of electrons with energies compatible the with internal excitation of xenon. The emission spectrum observed at a pressure of 10 kPa shows peaks at 152 and 172 nm, which are thought to be originated from metastable Xe2* states. In contrast to the case of conventional impact ionization, no near‐infrared (NIR) peaks are seen in the spectrum. These results strongly suggest that the incidence of energetic electrons causes direct excitation of xenon molecules followed by radiative relaxation through intermediate states. The generated VUV light can be easily converted to visible light using a phosphor screen. As a discharge‐free VUV light emission, this phenomenon is potentially applicable to mercury‐free, high‐efficacy, and high‐stability flat‐panel light‐emitting device.

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“…Koganei, Tokyo, 184-8588, Japan *e-mail: 50006834202@st.tuat.ac.jp As reported previously [1], the nanocrystalline silicon (nc-Si) ballistic electron emitter shows some specific features: emission of high energy electrons with several eV in average [2], surface emission [3], small angle dispersion [4], operation in various medium, including vacuum, atmospheric-pressure gases [5], and solutions [6,7]. When the emitter is driven in aqueous solutions without using any counter electrode, hydrogen is generated at the device surface.…”

mentioning

confidence: 86%

Illumination effects on the characteristics of nanocrystalline silicon ballistic emitter as an active electrode in solutions

Ohta

Ogawa

Gelloz

et al. 2009

2009 22nd International Vacuum Nanoelectronics Conference

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As reported previously [1], the nanocrystalline silicon (nc-Si) ballistic electron emitter shows some specific features: emission of high energy electrons with several eV in average [2], surface emission [3], small angle dispersion [4], operation in various medium, including vacuum, atmospheric-pressure gases [5], and solutions [6,7]. When the emitter is driven in aqueous solutions without using any counter electrode, hydrogen is generated at the device surface. The present paper reports the effects of illumination on the activity of the nc-Si ballistic emitters in solutions. The experimental results of the operation in D 2 O solutions are also presented.The nc-Si emitter was composed of a thin Au film (10 nm), nc-Si layer (1ȝm), polycrystalline silicon, and n + -Si substrate. The nc-Si layer was formed by photo-anodization technique and oxidized rapidly to enhance the electric field effect. Then, some treatments (high pressure water vapor annealing, annealing in forming gas, surface chemical modification; replacement of residual metastable Si-H bonds by stable covalent Si-C bonds) were performed to decrease oxide film defects and to passivate nc-Si layer.The device was packaged such that only emitter surface area was exposed to the solution. A Halogen Lamp was used to illuminate the emitting surface in some experiments. As shown in Fig. 1, cyclic voltammograms in the three electrode configuration were measured under the dark or illumination. The species of gas evolved in solutions during the operation with no counter electrode were also analyzed by gas chromatography. The change in the properties of solutions was characteristics by pH value and dissolved hydrogen content.Figure 2 shows the voltammograms characteristics of the nc-Si ballistic electron emitter as an active electrode in H 2 SO 4 solution (0.1 mol/l, pH=1) at V PS =30 V. The characteristics under Pt-Ptconfiguration is also shown for reference. The redox potential of H 2 SO 4 solution is also indicated by the arrows. When the device surface is illuminated, both the diode current and the H 2 generation rate are increased in comparison to those observed in the dark. This is presumably due to a photo-induced effect leading to an enhancement in the energetic electron injection into solutions. The assistance of illumination at appropriate wavelength possibly improves the electrochemical activity.As in every aqueous solution, in which the emitter operation generates hydrogen with no by-product, only deuterium is generated in D 2 O as well. The pH value also exhibited a shift toward the alkaline side during the device operation with no counter electrodes.It has been confirmed that this device operates as an active electrode which supplies strongly reducing electrons into solutions. The hydrogen generation rate depends not only on H + ions concentration at the interface but also the difference between the energy of emitted electrons and redox potential of solutions. The nc-Si ballistic emitter is useful in solutions not only for hydrogen generation but also ...

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Annealing effects on the operation stability of ballistic electron emission from electrochemically oxidized nanocrystalline silicon diodes

Abstract: Articles you may be interested inPhotoassisted electron emission from metal-oxide-semiconductor cathodes based on nanocrystalline silicon

Cited by 17 publications

References 14 publications

Improved electron emission properties of the porous silicon emitter by chemical surface modification

Improved electron emission properties of the porous silicon emitter by chemical surface modification

Direct excitation of xenon by ballistic electrons emitted from nanocrystalline‐silicon planar cathode and vacuum‐ultraviolet light emission

Illumination effects on the characteristics of nanocrystalline silicon ballistic emitter as an active electrode in solutions

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