Annealing effects on the microstructural properties of complex sulfosalt (SnS)x–(Bi2S3)1−x gradient thin films

Tariq, Ghulam Hasnain; Hutchings, Kyle; Lane, David W.; Rogers, Keith; Anis-ur-Rehman, M.

doi:10.1088/0022-3727/46/48/485302

Cited by 9 publications

(5 citation statements)

References 28 publications

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“…The sample annealed at 500°C showed a poorer crystalline structure. There does exist any SnS 2 phase as we have studied earlier for vacuum-annealed samples [15]. It has a prominent effect on optical properties as discussed subsequently.…”

Section: X-ray Diffractionmentioning

confidence: 58%

“…A variety of growth techniques can be used for the deposition of these compositionally varying films. Previously, we used combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation [15] and prepared samples were annealed in vacuum. In the present study, CSA was used to deposit Sn-Bi-S graded films on cleaned microscope slide glass substrates by thermal co-evaporation of SnS and Bi 2 S 3 powders and prepared samples are annealed in argon environment.…”

Section: Methodsmentioning

confidence: 99%

“…In the present study, CSA was used to deposit Sn-Bi-S graded films on cleaned microscope slide glass substrates by thermal co-evaporation of SnS and Bi 2 S 3 powders and prepared samples are annealed in argon environment. Details of CSA have been discussed in [15]. The precursor chemicals SnS and Bi 2 S 3 were sourced from Testbourne Ltd., UK, and had purity 99.99 and 99.999 %, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Their band gaps are also direct, resulting in high optical absorption coefficients [12][13][14], indicating that future devices would only require a thin active layer to effectively absorb all incident light. We have studied earlier annealing effects on the microstructural properties of complex sulfosalt (SnS) x -(Bi 2 S 3 ) 1-x gradient thin films [15]. In the present study we report the preparation of multi-phase Sn-Bi-S thin films using a combinatorial or high-throughput approach by the co-evaporation of separate SnS and Bi 2 S 3 sources to give a compositional gradient across the films that allows a wide range of compositions to be simultaneously examined.…”

Section: Introductionmentioning

confidence: 99%

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Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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The development of cost-effective and nontoxic thin film materials is vital for fabrication of solar cells. We are presenting a combinatorial synthesis approach (CSA) for the deposition of chalcogenide Sn-Bi-S graded thin films by thermal evaporation. Post-deposition thermal annealing in the temperature range of 200-500°C in an argon atmosphere has been carried out for the Sn-Bi-S thin films. The effect of annealing treatment and initial composition on the structural properties of the Sn-Bi-S graded thin films was studied by using energy-dispersive X-ray spectroscopy, X-ray diffraction (XRD), and Raman spectroscopy. XRD measurements showed that the thin films were grown in polycrystalline structure. Different microstructural parameters such as crystallite size, dislocation density, and microstrain were estimated after postdeposition thermal treatment and found annealing temperature dependent. From the transmission spectra the estimated optical band gap energy values were found in the range 1.27-1.43 eV for the (Sn/Bi) molar ratio of 2.18-0.67 in a typical sample annealed at 400°C. Photoconductivity response was determined for incident light of wavelength 300-1100 nm and was observed to be annealing temperature and Sn/Bi molar ratio dependent. Photoconductivity was also noted to depend upon the Sn/Bi molar ratio with Sn-rich samples giving the strongest response. Sn-rich compositions also showed p-type conductivity over the temperature range of 350-400°C. These findings show that the CSA has potential for the screening of high-quality Sn-Bi-S thin films.

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Section: X-ray Diffractionmentioning

confidence: 58%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Physical properties of chalcogenide Sn–Bi–S graded thin films annealed in argon

2015

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“…Before deposition, all substrates underwent thorough This journal is © the Owner Societies 2023 cleaning using a well-designed scheme to ensure the best possible surface conditions. 33…”

Section: Synthesis Of Cu-doped Sns Thin Filmsmentioning

confidence: 99%