Annealing dynamics of As ion-implanted GaAs: As Ga antisite defect model

Abstract

We determined the annealing dynamics of As Ga antisite defects in As ion-implanted GaAs based on a model where As Ga antisite defects trap photo-excited carriers. An Arrhenius plot of the carrier decay rate vs. annealing temperature in the high temperature regime gave an energy E PA , which was different from true activation energy. The annealing time dependence of E PA obtained by the two diffusion models (self diffusion and V Ga vacancy assisted diffusion of defects) were compared with E PA 's obtained form already published works, which proved that the density of V Ga vacancy was high enough to assist the diffusion of As Ga antisite defects and that the annealing dynamics of As Ga antisite defects was V Ga vacancy assisted diffusion.