Annealed AuGe based Ohmic contacts on InP with ion milling prior to metallization

Dunn, J.; Stringfellow, G. B.

doi:10.1007/bf02651748

Cited by 13 publications

(5 citation statements)

References 13 publications

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“…In contrast to GaAs, sputter-etching of InP [52,53] has been found to create a damaged group III-rich surface with associated degenerate n-type doping, and in this procedure the metal deposition can be performed immediately following the initial sputter clean of the native oxide. Alloying has been used in combination with sputter etching prior to GeAuNi contacts formation and produces some of the best electrical results with contact resistivities < 1x10-7 Qcm2 [54].…”

Section: Contacts To Inpmentioning

confidence: 99%

A survey of ohmic contacts to III-V compound semiconductors

Ren²,

et al. 1997

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A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g. GeAuNi for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n-and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A

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Section: Contacts To Inpmentioning

confidence: 99%

A survey of ohmic contacts to III-V compound semiconductors

Ren²,

et al. 1997

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“…16 There are reports where Ar ion milling was carried out prior to metallization of ohmic contacts. 20,21 This was shown to be effective to reduce the contact resistance. The improvement was attributed to the surface cleaning.…”

Section: Figmentioning

confidence: 99%

Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling

Hortelano

Weidlich

Semtsiv

et al. 2018

Applied Physics Letters

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Nanometer-sized channels are fabricated in (In,Ga)As-InP heterostructures using Ar ion milling. The ion milling causes spontaneous creation of nanowires, and moreover, electrical conduction of the surface as carriers is generated by sputtering-induced defects. We demonstrate a method to restore electrical isolation in the etched area that is compatible with the presence of the nanochannels. We remove the heavily damaged surface layer using a diluted HCl solution and subsequently recover the crystalline order in the moderately damaged part by annealing. We optimize the HCl concentration to make the removal stop on its own before reaching the conduction channel part. The lateral depletion in the channels is shown to be almost absent.

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“…Historically, III-V materials based devices have been fabricated with dedicated non-CMOS-compatible technology. For instance, the classical metallizations used to contact n-InP and p-InGaAs layers are made of metal stacks such as AuGe 4) and Au/Pt/Ti 5) ; they are integrated using liftoff processes. Only few studies have been conducted using CMOS-compatible contacts.…”

Section: Introductionmentioning

confidence: 99%

Development of a CMOS-compatible contact technology for III–V materials and Si photonics

Rodriguez

Ghegin

Boyer

et al. 2020

Jpn. J. Appl. Phys.

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In this progress review, an overview of the CMOS-compatible contact technology developed at the CEA-Leti for Si photonics applications is proposed. The elaboration of III–V/Si hybrid lasers implies the development of ohmic contacts on n-InP and p-InGaAs III–V materials. In this way, a contact technology fully compatible with a Si-Fab line was developed. The results presented in this manuscript cover a wide scope: from surface preparation and solid-state reaction to electrical results and integration guidelines. The metallurgy of several systems including Ni/InGaAs, Ni/InP, Ti/InGaAs and Ti/InP was studied. The direct metallization of III–V materials using Ni2P was also introduced. Most of the studied metallizations provided efficient solutions for achieving ohmic contacts on n-InP and p-InGaAs. Finally, the contact technology developed in the framework of this study was successfully integrated on 200 mm CMOS-compatible III–V/Si hybrid lasers.

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Annealed AuGe based Ohmic contacts on InP with ion milling prior to metallization

Cited by 13 publications

References 13 publications

A survey of ohmic contacts to III-V compound semiconductors

A survey of ohmic contacts to III-V compound semiconductors

Nanostructuring of conduction channels in (In,Ga)As-InP heterostructures: Overcoming carrier generation caused by Ar ion milling

Development of a CMOS-compatible contact technology for III–V materials and Si photonics

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