Anisotropy of epitaxial Fe films grown on <i>n</i>-type GaAs by electrodeposition

Liu, Y.-K.; Scheck, C.; Schad, R.; Ding, Yunfei; Alexander, Chester; Zangari, Giovanni

doi:10.1063/1.1667434

Cited by 2 publications

(4 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As we have already noted in the case of copper oxide electrodeposition on Si, 52 the control of the solution pH, refined by the addition of a small amount of H 2 SO 4 , played an important role in the quality of the deposits. In contrast with some previous reports, where the Fe films were electrodeposited at pH 2.5 from various electrolytes of different concentrations, 7,9 we observed that a slight reduction of the pH from 2.5 to 2.3 was conducive to growing better quality films.…”

Section: 3contrasting

confidence: 99%

“…6−18 In the search to produce integrated circuits, Fe films were electrodeposited on surfaces of semiconductors such as Si or GaAs. 6,7,9,10 The relentless quest for the miniaturization of electronic devices, as well as the search for methods of manufacturing that allow high performance, leads to the requirement of a comprehensive understanding of thin film growth at the atomic scale. 19−21 In magnetic films, for example, the growth process and surface roughness are relevant aspects that determine properties such as anisotropy, coercivity, magnetization reversal mechanisms, and domain wall structure.…”

Section: Introductionmentioning

confidence: 99%

“…Electrochemical approaches have been used by several groups for the deposition of thin iron films in the last decades due to the possibility of fine-tuning the growth conditions with a relatively low cost. − In the search to produce integrated circuits, Fe films were electrodeposited on surfaces of semiconductors such as Si or GaAs. ,,, …”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Secondary Nucleation and Unstable Roughening in Fe Layers Electrodeposited on Si

Benetti,

Alves,

Zoldan

et al. 2023

Crystal Growth & Design

View full text Add to dashboard Cite

Thin iron films are interesting for fundamental studies and have applications in sensors, actuators, magnetic memory, and spintronic devices. Here, the electrodeposition of thin iron films on Si(100) is investigated with microscopy techniques and a modeling approach. Atomic force microscopy images of films with thicknesses from 6 to 180 nm show initial island growth, and after the formation of a continuous film, a decrease in the lateral correlation length is associated with a decrease in the width of surface undulations. In thicknesses above 100 nm, a rapid increase in the roughness suggests the onset of unstable growth. Transmission electron microscopy (TEM) images of 180 nm thick films reveal the secondary nucleation of Fe grains, a feature that was not previously observed in electrodeposited Fe films. These results are interpreted in light of simulations of an electrodeposition model that accounts for the interplay of diffusive cation flux in the electrolyte and surface relaxation of adsorbed Fe atoms. In the thickest simulated films, the unstable growth is controlled by the diffusive flux, and the simulated samples have surface cliffs that resemble those of TEM images. The model suggests that the sharp decrease in the correlation length of the Fe films must be related to some transition in the surface dynamics, consistent with the observed secondary nucleation. These results may help the control of Fe film morphology in future studies.

show abstract

Section: 3contrasting

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Secondary Nucleation and Unstable Roughening in Fe Layers Electrodeposited on Si

Benetti,

Alves,

Zoldan

et al. 2023

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

“…Therefore, the Fe lattice matches well with the GaAs crystal structure in the orientation (0,0,1)Fe/ (0,0,1)GaAs. For such a configuration, the Schottky barrier interface with low material interdiffusion and small concentration of defects have been realized by the electrodeposition technique [44] and molecular beam epitaxy [45]. The Schottky barrier height in the simulation is 72 .…”

Section: Simulation Results For Fe/gaas Spin Injectionmentioning

confidence: 99%

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Shen

Saikin

Cheng

2004

Journal of Applied Physics

View full text Add to dashboard Cite

We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission and tunneling injection are included in the model. Due to the barrier shape, the injected electrons are non-thermalized. Spin dynamics in the semiconductor heterostructure is controlled by the Rashba and Dresselhaus spinorbit interactions and described by a single electron spin density matrix formalism. In addition to the linear term, the third order term in momentum for the Dresselhaus interaction is included.Effect of the Schottky potential on the spin dynamics in a 2 dimensional semiconductor device channel is studied. It is found that the injected current can maintain substantial spin polarization to a length scale in the order of 1 micrometer at room temperature without external magnetic fields. 72.25Dc, 72.25.Hg, 72.25Rb, 2 PACS:

show abstract

Anisotropy of epitaxial Fe films grown on n-type GaAs by electrodeposition

Cited by 2 publications

References 13 publications

Secondary Nucleation and Unstable Roughening in Fe Layers Electrodeposited on Si

Secondary Nucleation and Unstable Roughening in Fe Layers Electrodeposited on Si

Monte Carlo modeling of spin injection through a Schottky barrier and spin transport in a semiconductor quantum well

Contact Info

Product

Resources

About