Anisotropic thermal properties and ferroelectric phase transitions in layered CuInP2S6 and CuInP2Se6 crystals

Liubachko, V.; Shvalya, Vasyl; Oleaga, A.; Salazar, A.; Kohutych, A.; Погодін, А.І.; Vysochanskiǐ, Yu. M.

doi:10.1016/j.jpcs.2017.08.013

Cited by 20 publications

(7 citation statements)

References 19 publications

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“…The spontaneous polarization of the sulfide can range from~5 μC/cm 2 to~12 μC/cm2 11 vs~2.5 μC/cm 2 12 in the selenide, in part due to larger off-centric Cu displacement in the sulfide. Despite the structural similarity, the reported properties of their phase transitions are quite different 10 . Other than the difference in the transition temperatures (~230 K 8,9 in the selenide vs 305 K in the sulfide 6,10 ), CuInP 2 Se 6 exhibits a broader transition window compared to CuInP 2 S 6 , as evidenced by macroscopic dielectric, caloric and thermal characterization 9,10 .…”

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confidence: 98%

“…Despite the structural similarity, the reported properties of their phase transitions are quite different 10 . Other than the difference in the transition temperatures (~230 K 8,9 in the selenide vs 305 K in the sulfide 6,10 ), CuInP 2 Se 6 exhibits a broader transition window compared to CuInP 2 S 6 , as evidenced by macroscopic dielectric, caloric and thermal characterization 9,10 . It was proposed that this anomaly is evidence for the coexistence of ferrielectric and antiferroelectric (AFE) ordering, and an incommensurate phase that precedes ferroelectric ordering 9 .…”

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confidence: 98%

“…ayered thiophosphates, with a general composition of CuInP 2 Q 6 (Q = S, Se) 1 , have recently gained attention as candidate materials for two-dimensional [2][3][4] (2D) or fewlayered ferroelectrics 2,5 . The sulfur 6,7 and selenium [8][9][10] compounds have similar structure of individual layers and a concomitant ferrielectric (FE) ordering, with Cu + and In 3+ ions counter-displaced within individual layers, against the backbone of P 2 Q 4-6 anions. The spontaneous polarization of the sulfide can range from~5 μC/cm 2 to~12 μC/cm2 11 vs~2.5 μC/cm 2 12 in the selenide, in part due to larger off-centric Cu displacement in the sulfide.…”

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Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6

et al. 2020

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Polar van der Waals chalcogenophosphates exhibit unique properties, such as negative electrostriction and multi-well ferrielectricity, and enable combining dielectric and 2D electronic materials. Using low temperature piezoresponse force microscopy, we revealed coexistence of piezoelectric and non-piezoelectric phases in CuInP 2 Se 6 , forming unusual domain walls with enhanced piezoelectric response. From systematic imaging experiments we have inferred the formation of a partially polarized antiferroelectric state, with inclusions of structurally distinct ferrielectric domains enclosed by the corresponding phase boundaries. The assignment is strongly supported by optical spectroscopies and density-functionaltheory calculations. Enhanced piezoresponse at the ferrielectric/antiferroelectric phase boundary and the ability to manipulate this entity with electric field on the nanoscale expand the existing phenomenology of functional domain walls. At the same time, phase-coexistence in chalcogenophosphates may lead to rational strategies for incorporation of ferroic functionality into van der Waals heterostructures, with stronger resilience toward detrimental size-effects.

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Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6

et al. 2020

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“…As can be seen from the equations of ΔT and ΔS, the fast polarization change with respect to temperature can significantly enhance the EC strength of the EC material. The density of CIPS is 3405 kg m -3 at 295 K. 19 The heat capacity of CIPS is 557 J K -1 kg -1 at 315 K. 22,23 ρ are assumed to have minor change in the temperature range of interest because the experiments were performed in a narrow temperature range between 290 K to 330 K. The 7 temperature dependent heat capacity 23 of CIPS is used in the calculation, although only minor changes happen within the range of interest. Electrocaloric temperature change of the 0.95 μm thick CIPS is plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP₂S₆ for Solid-State Refrigeration

Saha

Liao

et al. 2019

ACS Nano

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A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-state cooling solution. However, electrocaloric (EC) performance of EC materials generally is not sufficiently high for real cooling applications. As a result, exploring EC materials with high performance is of great interest and importance. Here, we report on the ECE of ferroelectric materials with van der Waals layered structure (CuInP2S6 or CIPS in this work in particular).Over 60% polarization charge change is observed within a temperature change of only 10 K at Curie temperature. Large adiabatic temperature change (|ΔT|) of 3.3 K, isothermal entropy change (|ΔS|) of 5.8 J kg -1 K -1 at |ΔE|=142.0 kV cm -1 at 315 K (above and near room temperature) are achieved, with a large EC strength (|ΔT|/|ΔE|) of 29.5 mK cm kV -1 . The ECE of CIPS is also investigated theoretically by numerical simulation and a further EC performance projection is provided.Electrocaloric refrigerators using electrocaloric materials are low noise, environmentfriendly and can be scaled down to small dimensions, compared to the common vaporcompression refrigerators. 1-13 Electrocaloric cooling is also much easier and lower cost to realize compared to other field induced cooling techniques such as magnetocaloric and mechanocaloric cooling, because the electric field is easily to be realized and accessible. Thus, electrocaloric effect is promising for future cooling applications, especially in micro-or nano-scale such as onchip cooling. Electrocaloric effect in ferroelectric materials is of special interest because of the large polarization change near the ferroelectric-paraelectric (FE-PE) phase transition temperature 21 TOC.

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“…Cu-based layered chalcogenides, with a chemical formula CuInP2Q6 (Q is S or Se) [20,21], are promising layered uniaxial ferrielectrics [22,23,24], with a possibility of downscaling to the limit of a single layer [25,26]. Here S-and Se-based Cu-In compounds have similar structure of individual layers, with Cu + and In 3+ ions counter-displaced within individual layers, against the backbone of P2Q6 anions [27,28,29]. The spontaneous polarization of the uniaxial ferrielectric CuInP2S6 ranges from 0.05 C/m 2 to 0.12 C/m 2 [30], and is about 0.025 C/m 2 for the uniaxial ferrielectric CuInP2Se6 [31].…”

Section: Introductionmentioning

confidence: 99%

Stress-induced phase transitions in nanoscale CuInP2S6

Morozovska

Eliseev²,

Kalinin³

et al. 2021

Phys. Rev. B

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Using Landau-Ginsburg-Devonshire approach and available experimental results we constructed multiwell thermodynamic potential of the layered ferroelectric CuInP2S6 (CIPS). The analysis of temperature dependences of the dielectric permittivity and lattice constants for different applied pressures unexpectedly reveals the critically important role of a nonlinear electrostriction in this material. With the nonlinear electrostriction included we calculated the temperature and pressure phase diagrams and spontaneous polarization of a bulk CIPS, within the assumed range of applicable temperatures and applied pressures. Using the developed thermodynamic potential, we revealed the strain-induced phase transitions in thin epitaxial СIPS films, as well as the stress-induced phase transitions in СIPS nanoparticles, which shape varies from prolate needles to oblate disks. We also revealed the strong influence of a mismatch strain, elastic stress and shape anisotropy on the phase diagrams and polar properties of a nanoscale CIPS, and derived analytical expressions allowing for elastic control of the nanoscale CIPS polar properties.Hence obtained results can be of particular interest for the strain-engineering of nanoscale layered ferroelectrics.

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Anisotropic thermal properties and ferroelectric phase transitions in layered CuInP2S6 and CuInP2Se6 crystals

Cited by 20 publications

References 19 publications

Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6

Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6

Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP₂S₆ for Solid-State Refrigeration

Stress-induced phase transitions in nanoscale CuInP2S6

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Anisotropic thermal properties and ferroelectric phase transitions in layered CuInP2S6 and CuInP2Se6 crystals

Cited by 20 publications

References 19 publications

Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6

Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6

Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid-State Refrigeration

Stress-induced phase transitions in nanoscale CuInP2S6

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Product

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Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP₂S₆ for Solid-State Refrigeration