Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6

Džiaugys, A.; Kelley, Kyle P.; Brehm, John A.; Lei, Tao; Puretzky, Alexander A.; Feng, Tianli; O’Hara, Andrew; Neumayer, Sabine M.; Chyasnavichyus, Marius; Eliseev, Eugene A.; Banys, J.; Vysochanskii, Yulian M.; Ye, Feng; Chakoumakos, Bryan C.; Susner, Michael A.; McGuire, Michael A.; Kalinin, Sergei V.; Ganesh, Panchapakesan; Balke, Nina; Pantelides, Sokrates T.; Morozovska, Anna N.; Maksymovych, Petro

doi:10.1038/s41467-020-17137-0

Cited by 57 publications

(49 citation statements)

References 37 publications

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“…Moreover, the strategy to tune macroscopic piezoelectricity by controlling the intrinsic polarization rotation applies to principally all types of ferroelectric materials including organometal halide perovskites, [ 38 ] metal‐free molecular ferroelectrics, [ 39 ] lead‐free piezoceramics, [ 40 ] textured ferroelectric ceramics, [ 41 ] and 2D ferroelectrics. [ 42 ] Some potential examples for the experimental design of new materials utilizing the inverse‐domain size effect to achieve enhanced piezoelectric properties are presented in Note S3 (Supporting Information). The theoretical approach based on thermodynamic analysis and phase‐field modeling may stimulate further interest in understanding the microstructural size effects for other ferroic and multiferroic materials such as ferromagnetic shape memory alloys.…”

Section: Resultsmentioning

confidence: 99%

Inverse Domain‐Size Dependence of Piezoelectricity in Ferroelectric Crystals

Wang

Chen

2021

Advanced Materials

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Piezoelectricity of ferroelectric crystals is widely utilized in electromechanical devices such as sensors and actuators. It is broadly believed that the smaller the ferroelectric domain size, the higher the piezoelectricity, arising from the commonly assumed larger contributions from the domain walls. Herein, the domain‐size dependence of piezoelectric coefficients of prototypical ferroelectric crystals is theoretically studied based on thermodynamic analysis and phase‐field simulations. It is revealed that the inverse domain‐size effect, i.e., the larger the domain size, the higher the piezoelectricity, is entirely possible and can be just as common. The nature of the domain‐size dependence of piezoelectricity is shown to be determined by the propensity of polarization rotation inside the domains instead of the domain wall contributions. A simple, unified, analytical model for predicting the domain‐size dependence of piezoelectricity is established, which is valid regardless of the crystalline symmetry, the materials chemistry, and the domain structures of a ferroelectric crystal, and thus can serve as a guiding tool for optimizing piezoelectricity of ferroelectric materials beyond the “nanodomain” engineering. In addition, the theoretical approach can be extended to understand the microstructural size effect of multifunctional properties in ferroic and multiferroic materials.

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Section: Resultsmentioning

confidence: 99%

Inverse Domain‐Size Dependence of Piezoelectricity in Ferroelectric Crystals

Wang

Chen

2021

Advanced Materials

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“…The intrinsically weak interlayer interaction allows each individual layer to behave independently, granting the unique opportunity to preserve bulk properties down to single-layer thickness 5 – 7 . Various two-dimensional (2D) functionalities have been discovered in vdW materials 7 , including superconductivity 8 – 10 , ferromagnetism 11 , 12 , ferroelectricity 13 – 17 and antiferroelectricity 18 , 19 , offering a wealth of choices for making ultrathin flexible 2D heterostructure devices 7 , 20 . Among all the ferroic properties, ferroelasticity represents the mechanical equivalent of ferromagnetism and ferroelectricity, with multiple orientation states of spontaneous lattice strain that are switchable under mechanical stimuli 4 , 21 , 22 .…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional ferroelasticity in van der Waals β’-In2Se3

Mao

Guo

et al. 2021

Nat Commun

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Two-dimensional (2D) materials exhibit remarkable mechanical properties, enabling their applications as flexible and stretchable ultrathin devices. As the origin of several extraordinary mechanical behaviors, ferroelasticity has also been predicted theoretically in 2D materials, but so far lacks experimental validation and investigation. Here, we present the experimental demonstration of 2D ferroelasticity in both exfoliated and chemical-vapor-deposited β’-In2Se3 down to few-layer thickness. We identify quantitatively 2D spontaneous strain originating from in-plane antiferroelectric distortion, using both atomic-resolution electron microscopy and in situ X-ray diffraction. The symmetry-equivalent strain orientations give rise to three domain variants separated by 60° and 120° domain walls (DWs). Mechanical switching between these ferroelastic domains is achieved under ≤0.5% external strain, demonstrating the feasibility to tailor the antiferroelectric polar structure as well as DW patterns through mechanical stimuli. The detailed domain switching mechanism through both DW propagation and domain nucleation is unraveled, and the effects of 3D stacking on such 2D ferroelasticity are also discussed. The observed 2D ferroelasticity here should be widely available in 2D materials with anisotropic lattice distortion, including the 1T’ transition metal dichalcogenides with Peierls distortion and 2D ferroelectrics such as the SnTe family, rendering tantalizing potential to tune 2D functionalities through strain or DW engineering.

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“…The rapid growth of two-dimensional (2D) semiconductor devices has spurred burgeoning interest in searching for functional dielectrics that can be integrated with 2D materials like graphene and transition-metal dichalcogenides (TMDs) for device performance enhancement and engineering-rich functionalities. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20] Copper indium thiophosphate CuInP 2 S 6 (CIPS), one of the van der Waals (vdW) ferroelectrics from the transitional metal thio/seleno-phosphates (TPS) family, allows such interface integration to build full-vdW heterostructure based functional logic and memory devices, such as negative capacitance field-effect transistors (NC-FETs), 21 ferroelectric tunnel junctions (FTJs), 22,23 and ferroelectric field-effect transistors (Fe-FETs). 5,10,11 In these devices, the local response of CIPS to the electric field is thus of paramount importance to determine the device performance.…”

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confidence: 99%