Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post-growth patterning

Tsukamoto, Nobuo; Yazawa, Y.; Asano, Junko; Minemura, Tetsuroh

doi:10.1063/1.107752

Cited by 4 publications

(1 citation statement)

References 8 publications

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“…[1][2][3][4][5] The epitaxial growth encounters challenges from not only structural defects, [6][7][8] but also the residual strain. [9][10][11] A lattice mismatch of 4.2% between GaAs and Si at growth temperature is relaxed by dislocations at the interface. 12) On the other hand the subsequent cooling to room temperature induces thermal strain owing to the large difference of the thermal expansion coefficient.…”

Section: Introductionmentioning

confidence: 99%

Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence

Lee¹,

Chien²,

Fan³

et al. 2012

Jpn. J. Appl. Phys.

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The strains in GaAs nanowires, which were grown from 1700-to 80-nm-wide trenches on the Si(001) wafer with SiO 2 masks, were investigated by cathodoluminescence. For 1700-to 500-nm-wide trenches, the in-plane tensile strain at 15 K decreases with the decreasing trench width. The strain increases abruptly when the trench width is 300 nm, and then decreases as the trench width is further decreased. The results revealed that the stress induced by the SiO 2 sidewalls dominates when the width is less than the depth of the trench. This approach provides an effective technique to measure the strain of a single nanowire and helps for the demonstration of selectively-grown GaAs with a designed strain.

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Section: Introductionmentioning

confidence: 99%

Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence

Lee¹,

Chien²,

Fan³

et al. 2012

Jpn. J. Appl. Phys.

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Investigation of strain effects in selectively grown GaAs on Si

Zieger

Stauß

Frankowsky

et al. 1994

Journal of Crystal Growth

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Cathodoluminescence studies and finite element analysis of thermal stresses in GaAs/Si stripes

Lingunis

Haegel

Karam

1993

Journal of Applied Physics

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Thermal stresses in selectively etched and selectively grown GaAs/Si (100) stripes of different width-to-thickness ratios are investigated by low-temperature cathodoluminescence (CL) spectroscopy and elastic finite element (FE) analysis. A qualitative description of the expected stress state based on FE results is followed by experimental stress measurement by low-temperature (10 K) CL spectroscopy. Precise determination of the heavy-hole (HH, rnj = =I= i) and light-hole (LH; m j = f d) excitonic peak energies through deconvolution of the CL spectra allows for measurement of the longitudinal and transverse stress components (parallel and perpendicular to the long stripe dimension, respectively). The CL results show that the longitudinal stress remains fairly constant (tensile) as a function of position, whereas the transverse stress decreases monotonically with decreasing distance from stripe edges, assuming small negative (compressive) values in the immediate vicinity of the latter. No significant differences were found between selectively etched and selectively grown stripes. The experimental results are compared with finite element elastic calculations and discussed in view of the experimental and computational parameters.

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Anisotropic strain relaxation in GaAs layers grown on Si(100) substrates by post-growth patterning

Cited by 4 publications

References 8 publications

Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence

Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence

Investigation of strain effects in selectively grown GaAs on Si

Cathodoluminescence studies and finite element analysis of thermal stresses in GaAs/Si stripes

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