Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}

Srivastava, Deepak; Garrison, Barbara J.; Brenner, Donald W.

doi:10.1103/physrevlett.63.302

Cited by 74 publications

(13 citation statements)

References 14 publications

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“…Based on symmetry, strain, and lattice coincidence considerations, Co adsorption in B and C sites leads to the formation of untwinned cube-on-cube oriented islands while adsorption in the other 8 sites leads to the formation of twinned islands. Moreover, MD simulations [24][25][26] also show that the adsorption sites leading to twin formation have higher capture probabilities due to larger funneling areas. This is consistent with our observation that the nucleation rate of twinned platelets is much higher than that of untwinned islands during the early stages of film growth.…”

Section: Cosi 2 Island Growth As a Function Of T Comentioning

confidence: 93%

Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence

2006

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Section: Cosi 2 Island Growth As a Function Of T Comentioning

confidence: 93%

Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence

2006

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“…1), it spontaneously opens the otherwise closed dimers on Ge͑001͒, which is necessary for a new layer to form. 19 But in contrast, the presence of an adatom directly above the surface dimer on Si͑001͒ does not lead to the dimer opening. 3,13…”

Section: A Adatom Binding and Diffusion On Unstrained Surfacesmentioning

confidence: 98%

Strain effect on adatom binding and diffusion in homo- and heteroepitaxies ofSiandGeon(001
Huang
¹
,
Liu
²
,
Gong
³

2004
Phys. Rev. B
48
6
28
0
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Strain dependence of adatom binding energies and diffusion barriers in homo-and heteroepitaxies of Si and Ge on ͑001͒ surface has been studied using first-principles calculations. In general, Si adatom binding energies and diffusion barriers are larger on Si͑001͒ and Ge͑001͒ surfaces than a Ge adatom, in accordance with decreasing bond strength from Si-Si to Si-Ge and to a Ge-Ge bond. The overall surface diffusion anisotropy of Si and Ge adatoms is found to be comparable on both Si͑001͒ and Ge͑001͒. The essentially linear dependence of binding energies and diffusion barriers on external strain is reproduced in all the cases, giving strong evidence for a priori quantitative prediction of the effect of external strain on adatom binding and surface diffusion.

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“…In the estimapromising methods to solve problems of this kind tions of the enthalpies electron pairing effects and probably are molecular dynamics investigations two-and three-body interactions were included. [48,49] or Monte Carlo simulations [26,50].…”

Section: -Simentioning

confidence: 99%

A theoretical study of adsorption equilibria in silicon CVD

Gardeniers

Giling

Jong

et al. 1990

Journal of Crystal Growth

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As part of a theoretical study of adsorption processes in the chemical vapour deposition of silicon, thermochemical data are derived for the adsorption of Si-H species on the Si(111) and the dimer-reconstructed Si(001)-(2 xl) surfaces. Essential contributions to the heats of adsorption appear to be electron pairing and two-and three-body interactions. It is shown that when the bond energies are defined in this way, also a consistent description of the bonds in silicon hydrides is provided. This demonstrates that with reasonable confidence the method can be applied to the adsorption process itself. Data are derived for species which may form one, two or even four bonds with the surface. It is assumed that on the (111) surface adsorbates bind on the "dangling bonds" which are present on this surface in a broken bond model. It is demonstrated that on the dimer reconstructed Si(001)-(2 xl) surface, adsorbates will either bind on the surface atoms with one or two bonds, without the breaking of the dimer bonds, or, if the species have the possibility to form two or four bonds with the surface atoms, may become inserted into the dimer bonds. With the aid of the derived thermochemical data for adsorption and the Langmuir isotherm or modifications thereof, the coverage of the Si(111) and the dimer reconstructed Si(001)-(2X1) surfaces with species from the Si-H system is calculated. It is found that the equilibrium surface coverages of the Si(111) and the Si(001)-(2 xl) surfaces are very similar: the hydrogen coverage is high at all temperatures, while at low supersaturation the coverage with growth species is very low on both surfaces.

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Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}

Cited by 74 publications

References 14 publications

Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence

Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence

Strain effect on adatom binding and diffusion in homo- and heteroepitaxies ofSiandGeon(001
Huang
¹
,
Liu
²
,
Gong
³

2004
Phys. Rev. B
48
6
28
0
View full text Add to dashboard Cite

A theoretical study of adsorption equilibria in silicon CVD

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Anisotropic spread of surface dimer openings in the initial stages of the epitaxial growth of Si on Si{100}

Cited by 74 publications

References 14 publications

Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence

Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence

Strain effect on adatom binding and diffusion in homo- and heteroepitaxies ofSiandGeon(001Huang1, Liu2, Gong3 2004Phys. Rev. B486280View full textAdd to dashboardCite

A theoretical study of adsorption equilibria in silicon CVD

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Product

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About

Strain effect on adatom binding and diffusion in homo- and heteroepitaxies ofSiandGeon(001
Huang
¹
,
Liu
²
,
Gong
³

2004
Phys. Rev. B
48
6
28
0
View full text Add to dashboard Cite