Anisotropic Refractive Index of Porous InP Fabricated   by Anodization of (111)A Surface

Kikuno, Eijiro; Amiotti, M.; Takizawa, Toshiyuki; Arai, Shigehisa

doi:10.1143/jjap.34.177

Cited by 50 publications

(26 citation statements)

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“…This surface exhibited a porous structure involving oxide components. Further study revealed that a porous (100) InP structure similar to that reported for the (111) InP surface [6][7][8][9] is formed in this passive region of the overpotential as discussed elsewhere 12) . XPS studies were also carried out on the anodically processed surfaces of n-InP in order to further confirm the presence of active-passive transition.…”

Section: Surface Morphology and Xps Studysupporting

confidence: 69%

“…In the literature, only limited works [2][3][4][5] have been reported on the anodic etching of InP, and their etch rate and uniformity have not been clarified. More recent anodization experiments [6][7][8][9] on InP using HCl electrolyte have led to the formation of InP porous structures. Although such an anodization mode is interesting for the formation of quantum structures and photonic crystals, it is not suitable for uniform etching.…”

Section: Introductionmentioning

confidence: 99%

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Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes

Kaneshiro¹,

Sato²,

Hasegawa³

1999

Jpn. J. Appl. Phys.

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Using voltammetry, X-ray photoemission spectroscopy (XPS), in situ electrochemical scanning tunneling microscopy (STM), ex situ atomic force microscopy (AFM) and scanning electron microscope (SEM) measurements, electrochemical etching modes for n-InP surfaces were investigated and optimized for uniform and controlled etching in an HCl electrolyte. The voltammograms indicated the presence of active and passive regions. The surfaces obtained in the active region were clean and featureless with an rms roughness of 1.8 nm. On the other hand, the oxide covered surfaces obtained in the passive region were nonuniform and porous. Etching characteristics of the d.c. photo-anodic mode and the pulsed avalanche mode were then investigated and compared. Both modes were found to be highly controllable and produced uniform and clean surfaces, consuming eight holes per molecule of InP. In particular, the pulsed avalanche etching mode realized an extremely high etch rate of 3x10 -5 nm/pulse.KEYWORD: InP, etching, electrochemical process, voltammetry, scanned probe microscope IntroductionScaling down of device feature size to the nanometer order is a recent general trend, not only for Si devices, but also for III-V devices. Thus, the etching process, the spatial uniformity and the precise controllability of the etching depth along with minimal process-induced damages have become increasingly important. Owing to its low damage nature, wet etching in various acid solutions 1) is widely used in various steps of InP and related material fabrication. However, precise control of the etching depth is extremely difficult in wet etching, because the etch rate is very sensitive to the temperature and the local fluctuation of the etchant composition.On the other hand, electrochemical etching appears to be promising for achieving high controllability, since the anodic reaction can be precisely controlled by the amount of charge according to Faraday's law of electrolysis. However, it is not clear at present whether it is possible to perform uniform and controlled etching of n-InP by the electrochemical reactions on InP surfaces in the electrolyte. In the literature, only limited works 2-5) have been reported on the anodic etching of InP, and their etch rate and uniformity have not been clarified. More recent anodization experiments 6-9) on InP using HCl electrolyte have led to the formation of InP porous structures. Although such an anodization mode is interesting for the formation of quantum structures and photonic crystals, it is not suitable for uniform etching. On the other hand, it has also been recently shown by our group that electrochemical etching applied just before electrodeposition is effective for the realization of well-behaved Schottky diodes with oxide-free, stress-free and pinning free interfaces for InP 10) . Similar results have been reported for n-GaAs Schottky contacts 11) . However, the mechanism, the etch uniformity and the etch rate of such a predeposition etching process have not been clarified yet.The purpose...

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Section: Surface Morphology and Xps Studysupporting

confidence: 69%

Section: Introductionmentioning

confidence: 99%

Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes

Kaneshiro¹,

Sato²,

Hasegawa³

1999

Jpn. J. Appl. Phys.

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“…In our study, a maximum depth of about 80 μm was achieved by anodization for 3 min. This value is much larger than the value reported for porous layers made on (111)A n-InP surfaces which had a maximum depth of 30 μm [25][26][27].…”

Section: (A)-(d)contrasting

confidence: 59%

“…On the other hand, formation of <111>-oriented straight pores without branches were reported by Takizawa et al for (111) oriented n-InP [25][26][27].…”

Section: 1)formation Of Nanoporesmentioning

confidence: 84%

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Hasegawa

Sato

2005

Electrochimica Acta

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This paper reviews recent efforts by authors' group to utilize electrochemical processes for formation, processing and gate control of III-V semiconductor nanostructures. Topics include precise photo anodic and pulsed anodic etching of InP, formation of arrays of <001>-oriented straight nanopores in n-type (001) InP by anodization and their possible applications, and macroscopic and nanometer-scale metal contact formation on GaAs, InP and GaN by a pulsed in-situ electrochemical process, which remarkably reduces Fermi level pinning. All the results indicate that electrochemical processes can achieve unique and important results which the conventional semiconductor technology cannot realize, anticipating their increased importance in future semiconductor nanotechnology and nanoelectronics. Key words:III-V semiconductors, anodic etching, nanopore, electrodeposition, Schottky barrier 1.IntroductionIt is widely recognized that artificial semiconductor nanostructures such as quantum wires (QWRs) and quantum dots(QDs) give rise to new rich functionalities to materials. They produce new quantum state spectra with novel state transitions and linear and non-linear quantum transport phenomena, and open up opportunities for novel quantum devices which control quantum-mechanical behavior of electrons and photons in various sophisticated ways.The standard approach for semiconductor nanostructure formation is to use fine crystal growth techniques such as molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). To fabricate devices, various standard etching and metal deposition techniques are used together with standard lithography techniques. However, the electrochemical approaches, if it attains sufficiently high controllability at the nanometerscale, seems to be highly useful for nanostructure formation and processing. The expected advantages include: (1) process simplicity and versatility, (2) capability of self-organization, (3) low processing temperature, (4) low process induced damage, (5) precise electrical control and (6) low processing costs.Some well known examples are porous Si formation [1,2] and use of anodized alumina as nanostructure templates for formation of carbon nanotubes [3].The purpose of this paper is to review recent attempts by the authors' group at RCIQE, Hokkaido University, that have been carried out in order to investigate feasibility of utilizing electrochemical processes for nanometer-scale processing and nanostructure formation in III-V semiconductors. Topics discussed in this paper include controlled (1) anodic etching of InP,

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“…For III -V compound semiconductors such as GaAs [2 -4], InP [5][6][7][8][9][10][11] and InSb [12], formation of porous layers and their many different properties as compared to the bulk materials have also been investigated.…”

Section: Introductionmentioning

confidence: 99%

Morphological characterization of porous InP superlattices

Tsuchiya

Hueppe

Djenizian

et al. 2004

Science and Technology of Advanced Materials

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Porous superlattices n-type (100) InP are produced electrochemically on by changing the applied current or potential periodically in 1 M HCl þ 1 M HNO 3 solutions. The superlattice consists of stack of alternating two layers with various morphologies and porosities. The planview morphologies of the top surface of superlattice were almost same, and the pore size was varied in the nano-order range. On the other hand, the cross-sectional morphologies depend strongly on the electrochemical condition. For low applied currents or potentials such as 10 mA or 1.5 V Ag/AgCl , respectively, porous layers with a facet-like structure were formed. The size of each facet did not change with the etching time, but the number of the facets increased with time. For high currents or potentials such as 50, 100 mA or 3 V Ag/AgCl , respectively, a tree-like structure with random and/or tangled branches was observed. At a still higher potential of 5 V Ag/AgCl , the porous layer exhibited fairly regular array of straight pores. Therefore, it is found that the morphology of the porous layer can be highly controlled by the applied current or potential. q

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Anisotropic Refractive Index of Porous InP Fabricated by Anodization of (111)A Surface

Cited by 50 publications

References 1 publication

Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes

Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes

Electrochemical processes for formation, processing and gate control of III–V semiconductor nanostructures

Morphological characterization of porous InP superlattices

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