Anisotropic photonic properties of III–V nanowires in the zinc-blende and wurtzite phase

Wilhelm, Christophe; Larrue, Alexandre; Dai, Xiaoying; Мигас, Д. Б.; Soci, Cesare

doi:10.1039/c2nr00045h

Cited by 45 publications

(44 citation statements)

References 97 publications

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“…This deviation from 100% is a result of the well-known refractive index mismatch effect, which favors parallel emission due to the high dielectric contrast between the NW and its environment (vacuum). 21 It has also been observed in ZB GaAs NWs, where the intrinsically unpolarized free exciton emission is found to be highly polarized along the wire axis. 31,32 In order to evaluate the impact of the hexagonal WZ crystal structure on the dynamics of the free exciton recombination, NW C was further characterized by time-resolved PL.…”

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confidence: 87%

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Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

et al. 2014

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confidence: 87%

“…Indeed, due to the lower symmetry of the hexagonal WZ unit cell compared to ZB, only transitions inducing emission polarized perpendicular to theĉ-axis are expected to be allowed in pure WZ NWs. 21 The linear polarization-dependence of the PL emission relative to the NW axis for the defect-free wire C is shown in Fig. 3(a) as a false-color plot.…”

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confidence: 99%

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

et al. 2014

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“…We note that producing a large confinement factor is only meaningful when the polarization of the electromagnetic guided mode matches the polarization of the dipole transition of the semiconductor nanostructure [85]. Both the crystalline structure (wurtzite and zincblende) and the dielectric mismatch between the wires have been demonstrated to cause optical anisotropy, which greatly impacts the polarization of the light emitted from the wire [86]. As pointed out in studies [66,70,132], we note that the confinement factor can in fact be higher than 1 for strong waveguiding, and this can be understood by the fact that a longitudinal confinement can take place.…”

Section: (A) Waveguiding Mechanism and Bare Resonatorsmentioning

confidence: 99%

Nanowire Lasers

et al. 2015

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione-dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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“…In WZ structures, VB splits two 7v and 9v subbands. The lowest in energy 9v-7c transition is allowed in the Ec polarization, whereas the 7v-7c transitions do not show preferential polarization [8], [9], [79]. As a result, the emission of III-V WZ materials (GaAs, InP, etc.)…”

Section: Optical Antenna Effectmentioning

confidence: 99%

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

Filippov¹

2016

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Abstract.Low-dimensional semiconductor structures, such as one-dimensional nanowires (NWs) and zero-dimensional quantum dots (QDs), are materials with novel fundamental physical properties and a great potential for a wide range of nanoscale device applications. Here, especially promising are direct bandgap II-VI and III-V compounds and related alloys with a broad selection of compositions and band structures. For examples, NWs based on dilute nitride alloys, i.e. GaNAs and GaNP, provide both an optical active medium and well-shaped cavity and, therefore, can be used in a variety of advanced optoelectronic devices including intermediate band solar cells and efficient light-emitters. Self-assembled InAs QDs formed in the GaAs matrix are proposed as building blocks for entangled photon sources for quantum cryptography and quantum information processing as well as for spin light emitting devices. ZnO NWs can be utilized in a variety of applications including efficient UV lasers and gas sensors. In order to fully explore advantages of nanostructured materials, their electronic properties and lattice structure need to be comprehensively characterized and fully understood, which is not yet achieved in the case of aforementioned material systems. The research work presented this thesis addresses a selection of open issues via comprehensive optical characterization of individual nanostructures using micro-Raman (-Raman) and microphotoluminescence (-PL) spectroscopies.In paper 1 we study polarization properties of individual GaNP and GaP/GaNP core/shell NWs using polarization resolved µ-PL spectroscopy. Near band-edge emission in these structures is found to be strongly polarized (up to 60% at 150K) in the orthogonal direction to the NW axis, in spite of their zinc blende (ZB) structure. This polarization response, which is unusual for ZB NWs, is attributed to the local strain in the vicinity of the N-related centers participating in the radiative recombination and to their preferential alignment along the growth direction, presumably caused by the presence of planar defects. Our findings therefore show that defect engineering via alloying with nitrogen provides an additional degree of freedom to control the polarization anisotropy of III-V nanowires, advantageous for their applications as a nanoscale source of polarized light.Structural and optical properties of novel coaxial GaAs/Ga(N)As NWs grown on Si II substrates, were evaluated in papers 2-4. In paper 2 we show by using -Raman spectroscopy that, though nitrogen incorporation shortens a phonon correlation length, the GaNAs shell with [N]<0.6% has a low degree of alloy disorder and weak residual strain.Additionally, Raman scattering by the GaAs-like and GaN-like phonons is found to be enhanced when the excitation energy approaches the E + transition energy. This effect was attributed the involvement of intermediate states that were created by N-related clusters in proximity to the E + subband. Recombination processes in these structures were studied in paper 3 by ...

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Anisotropic photonic properties of III–V nanowires in the zinc-blende and wurtzite phase

Cited by 45 publications

References 97 publications

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

Nanowire Lasers

Micro-photoluminescence and micro-Raman spectroscopy of novel semiconductor nanostructures

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