Anisotropic photoluminescence in incomplete three-dimensional photonic band-gap environments

Romanov, S. G.; Фокин, А. В.; Rue, R.M. De La

doi:10.1063/1.123097

Cited by 65 publications

(43 citation statements)

References 14 publications

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“…In principle, the light emitted from the semiconductor ncSis should be modified in presence of the dielectric periodicity of the ncSi-SIO structure. 29,30,[55][56][57][58][59][60][61][62] Since in the PL measurements, the emitted light is collected at 60° angle with respect to the opal surface normal, it was necessary to also record the reflection and transmission spectra of ncSi-SIO-1 sample measured at 60° incidence, Fig. 2f.…”

Section: Resultsmentioning

confidence: 99%

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A bottom-up fabrication method for the production of visible light active photonic crystals

et al. 2014

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Section: Resultsmentioning

confidence: 99%

“…[26][27][28][29][30][31][32][33][34] While control over spontaneous emission is at the heart of many potential photonic crystal-based technologies, 3,25,35-37 more and more exciting avenues are driving the research into new application areas. 27,[38][39][40] .…”

Section: Introductionmentioning

confidence: 99%

A bottom-up fabrication method for the production of visible light active photonic crystals

et al. 2014

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“…The use of opals infilled with semiconducting materials is also a subject of interest in optoelectronics due to the application of these composites as photonic crystals. [1][2][3] Opals are made of closed-packed amorphous submicron silica spheres forming a fcc lattice. It is known that the defect structure of SiO 2 is sensitive to ionizing radiation.…”

Section: Introductionmentioning

confidence: 99%

“…STE CL is very sensitive to local disorder. Experimental and theoretical investigations of STE in SiO 2 have led to a number of different models involving oxygen vacancies, peroxy linkages and EЈ centers ͑unpaired electron in a dangling tetrahedral sp 3 orbital of a single Si atom bonded to three oxygen atoms͒. STE are considered to be an interstitial-vacancy pair, for which the interstitial takes the form of an O 2 molecule.…”

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Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt

Dı́az-Guerra

Kurdyukov

Piqueras

et al. 2001

Journal of Applied Physics

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Synthetic opals-composed of 250 nm amorphous silica spheres closed packed in a face centered cubic structure-have been infilled with silicon, platinum, and with Si and different Pt contents. The luminescent properties of these composites have been investigated by cathodoluminescence ͑CL͒ microscopy and spectroscopy. CL emission is influenced by the material used to infill the pores of the opal matrix. CL spectra of all the samples investigated show two well-known bands, associated with the defect structure of the silica spheres, centered at about 1.9 and 2.7 eV, respectively. Emission in the 2.15-2.45 eV range, particularly intense in opal-based composites with a high Pt content, is tentatively associated with SiO 2 defects involving silicon clusters. A CL band peaked at about 3.4 eV as well as a band in the 1.50-1.75 eV range, whose peak position seems to be affected by the Pt content of the samples, are associated with the presence of Si nanocrystals. The behavior of these emissions suggests that both are related to defect states at the interface between Si nanocrystals and SiO 2 forming the opal spheres.

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“…[6][7][8][9][10] Most of these studies have involved variations of chemical bath deposition and report low filling fractions. The exceptions have been ZnS, 11 which has been incorporated with approximately 50% filling of the interstitial volume and CdS, 12 with filling fractions as high as 96%. However, this technique tends to produce many nanocrystallites such that the luminescent properties are very poor and usually the resulting structures exhibit low filling fractions due to high porosity.…”

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High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition

King

Neff

Summers

et al. 2003

Applied Physics Letters

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The infiltration of three-dimensional opal structures has been investigated by atomic layer deposition. Demonstrations using ZnS:Mn show that filling fractions Ͼ95% can be achieved and that the infiltrated material is of high-quality crystalline material as assessed by photoluminescence measurements. These results demonstrate a flexible and practical pathway to attaining high-performance photonic crystal structures and optical microcavities. © 2003 American Institute of Physics. ͓DOI: 10.1063/1.1609240͔The work of John 1 and Yablonovitch 2 in the late 1980's has resulted in an extensive interest in the fabrication of photonic crystals. Numerous methods have been employed to make such structures 3-6 and a complete photonic band gap has been demonstrated in millimeter 3 and infrared 4,6 wavelengths. The requirements for a complete photonic band gap include: high refractive index contrast (Ͼ2.8), long-range three-dimensional periodicity, and a high filling fraction. Many groups have shown that the infiltration of opals is a suitable route for obtaining the desired periodic structure. [6][7][8][9][10] Most of these studies have involved variations of chemical bath deposition and report low filling fractions. The exceptions have been ZnS, 11 which has been incorporated with approximately 50% filling of the interstitial volume and CdS, 12 with filling fractions as high as 96%. However, this technique tends to produce many nanocrystallites such that the luminescent properties are very poor and usually the resulting structures exhibit low filling fractions due to high porosity. Also, chemical vapor deposition has been used for infiltration exhibiting filling fractions ranging from 1% to 100%, with the highest numbers being for silicon which is not a luminescent material. [6][7][8][9] In this letter, we report a method of fabricating inverse opal films that utilizes atomic layer deposition ͑ALD͒ for the infiltration step. ALD is a growth technique that utilizes the sequential application of reactants coupled with substrate temperature optimization to achieve monolayer-bymonolayer growth. 13 As a result, growth is surface controlled instead of source controlled, enabling highly controllable deposition of conformal films on substrates with complex geometries, 14 such as opals.For this study colloidal silica solutions containing monodispersed spheres, 145-500 nm in diameter, were formed by the Stober method. 15 Self-assembled face centered cubic silica opal templates were then formed on silica or silicon substrates by the sedimentation of monodispersed colloidal silica in confinement cells as pioneered by Park et al., 16 and then dried and sintered (700-800°C for 2 h͒ to enhance structural stability, and to provide interconnectivity between the spheres. The interstitial volume of the opal was next filled with ZnS:Mn using conventional ALD precursors. Etching the infiltrated films in a 2% HF solution resulted in the removal of the silica spheres, and the formation of structurally stable inverse opals. The films were characte...

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Anisotropic photoluminescence in incomplete three-dimensional photonic band-gap environments

Cited by 65 publications

References 14 publications

A bottom-up fabrication method for the production of visible light active photonic crystals

A bottom-up fabrication method for the production of visible light active photonic crystals

Defect and nanocrystal cathodoluminescence of synthetic opals infilled with Si and Pt

High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition

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