Anisotropic Photoetching of III–V Semiconductors: I . Electrochemistry

Ven, J. van de; Nabben, H. J. P.

doi:10.1149/1.2086736

Cited by 59 publications

(50 citation statements)

References 11 publications

(18 reference statements)

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“…These results for silicon are reminiscent of pioneering work of van de Ven and Nabben on open-circuit etching of GaAs [50], [51]. The results can be interpreted in a similar way.…”

Section: Open-circuit Photoetchingsupporting

confidence: 70%

Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication

et al. 2001

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A brief review of silicon etching and electrochemistry provides an introduction to galvanic cell formation in silicon/metal contacts in aqueous electrolyte solutions. It is shown that such galvanic cells, which operate under open-circuit conditions, can be used to perform most of the functions of anodic etching and passivation. Applications relevant to sensor fabrication are described. These include the control of surface morphology, etch-stop mechanisms, and microporous and macroporous etching. In addition, surface structuring by open-circuit photoetching, a process which also depends on galvanic effects, is considered.

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“…These results for silicon are reminiscent of pioneering work of van de Ven and Nabben on open-circuit etching of GaAs [50], [51]. The results can be interpreted in a similar way.…”

Section: Open-circuit Photoetchingsupporting

confidence: 70%

Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication

et al. 2001

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“…[22][23][24][25][26] In addition, the electron-hole flow between illuminated and dark regions represents a major factor affecting the photochemical etching properties. 19,20 Additional complexity arises from the electrical properties of the etch mask that affect the electron flow in the etching system ͑etchant, mask, and semiconductor͒. The wet chemical etch properties can vary according to the electrical properties of the etch mask ͑e.g., metal or insulator͒ with or without light.…”

mentioning

confidence: 99%

Fabricating Vertical Sidewalls in GaAs∕AlGaAs Heterostructure Using Light-Induced Wet Etching

Parker

2006

J. Electrochem. Soc.

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We investigate the effects of light-induced wet etching ͑LIWE͒ on sidewall profile and etch rate for n-and p-type GaAs bulk, epitaxial AlGaAs layers and two different types of laser heterostructure using three different etch masks and three light-emitting diodes as light sources. The experiments show that the LIWE parameters ͑light-source wavelength, mask conductivity, sample layer structure͒ control the sidewall angle and etch rate. The technique successfully produced vertical sidewalls and "on-demand" etch-stop layers in laser heterostructure using sulfuric acid ͑H 2 SO 4 ͒: hydrogen peroxide ͑H 2 O 2 ͒: DI water ͑H 2 O͒ etch system. Wet etching has potential advantages over dry etching, 1-3 including lower cost, smoother surfaces, and larger etch rates. Integrated devices require a variety of etched-sidewall profiles and angles ranging from shallow etched-slopes for electrical contacts to vertical flat smooth surfaces for integrated laser mirrors. Vertical etches must maintain good control of lateral etching to inhibit smoothing of patterned features, prevent undercutting of metal contacts, and to increase the degree of integration for some types of devices including micro-optical-electrical-machines ͑MOEMs͒ with close-fitting moveable parts. 4 The sidewall profiles obtained from wet chemical etching normally depend on the etching solution and the material crystal direction. 5-8 Light-induced wet etching ͑LIWE͒ 9 potentially expands the fabrication options offered by anisotropic dry etching by using light to break the normal crystal-plane etching and thereby provides control over the sidewall profiles with angles ranging from several degrees to 90 degrees while retaining many favorable wetetching properties.The present research investigates the effects of LIWE on sidewall profiles and etch rate for n-and p-type GaAs bulk, epitaxial AlGaAs layers, and two different types of laser heterostructure with three different etch masks. The sidewall angle and etch rate are controlled by the etch condition including wavelength of the light source, electrical property of the mask, and layer structure of the material. The results show that a judicious choice of wavelength during the LIWE of heterostructure can transform a normally etching layer into an etch-stop layer or alter the etched-sidewall angle. The LIWE experiments reported here have successfully etched a vertical sidewall in laser heterostructure material.Photochemical etching has many possible applications such as maskless etching, selective etching, and control of the etched side wall profile. Podlesnik et al. 10 show that laser light increases the etch rate in illuminated regions of the sample. Deep trenches in n-type GaAs and AlGaAs have been fabricated by applying a focused laser beam 10-12 directly to a bulk sample positioned within the etching solution. Van de Ven et al. 13 fabricate square contours on GaAs samples by scanning a laser beam in a square pattern. The technique gives rise to the possibility of maskless etching whereby accurate control of the ...

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“…These films are degenerately ntype (~ 10 20 cm -3 ) due to residual defects or impurities. Ti metal contacts were patterned by liftoff on the periphery of the samples, and etching performed in a standard electrochemical cell consisting of a teflon sample holder and a Pt wire cathode [2][3][4][5][6][9][10][11][12][13][14]. An unfiltered 450W Hg arc lamp ~ 15cm from the sample provided illumination of the samples, which were immersed in unstirred KOH, NaOH or H 2 O/AZ400K solutions.…”

Section: Methodsmentioning

confidence: 99%

“…It has long been recognized that the dissolution rate of semiconductor materials may be enhanced in acid or base solutions by illumination with above bandgap light [10][11][12][13][14]. The basic mechanism for their photo-enhanced etching is oxidative dissociation of the semiconductor into its component elements (thereby consuming the photogenerated holes) and the subsequent reduction of the oxidizing agent in the solution by reaction with the photogenerated electrons.…”

Section: Introductionmentioning

confidence: 99%

Photoelectrochemical Etching of In_xGa_1−xN

Cho

Donovan

Abernathy

et al. 1999

MRS Internet j. nitride semicond. res.

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Anisotropic Photoetching of III–V Semiconductors: I . Electrochemistry

Cited by 59 publications

References 11 publications

Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication

Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication

Fabricating Vertical Sidewalls in GaAs∕AlGaAs Heterostructure Using Light-Induced Wet Etching

Photoelectrochemical Etching of In_xGa_1−xN

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Anisotropic Photoetching of III–V Semiconductors: I . Electrochemistry

Cited by 59 publications

References 11 publications

Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication

Galvanic cell formation: a review of approaches to silicon etching for sensor fabrication

Fabricating Vertical Sidewalls in GaAs∕AlGaAs Heterostructure Using Light-Induced Wet Etching

Photoelectrochemical Etching of InxGa1−xN

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Photoelectrochemical Etching of In_xGa_1−xN