Anisotropic optical properties of indium tin oxide thin films prepared by ion beam sputtering under oblique angle deposition

Hurand, S.; Corvisier, Alan; Lacroix, Bertrand; Santos, Antonio J.; Maudet, Florian; Dupeyrat, Cyril; Roja, Rafael García; Morales, F.; Girardeau, T.; Paumier, F.

doi:10.1016/j.apsusc.2022.152945

Cited by 8 publications

(3 citation statements)

References 58 publications

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“…Developing systems for the efficient and economical conversion of solar irradiation into chemical energy for the long-term storage of this intermittent renewable source and for generating reported via polymer templating, [21,22] oblique angle deposition, [23] sequential infiltration, [24] nanoparticle self-assembly, [25][26][27] in situ deposition-etching, [28] and atomic layer deposition on porous non-conducting scaffolds, [29] however the resulting pores are typically too small for the subsequent coating of a semiconducting layer while allowing for gas diffusion (which requires macropores [30] ). Moreover, these porous films have relatively poor conductivity while the deposition procedures rely on non-porous solid support substrates (e.g., standard FTO/glass) so they cannot be used as GDEs.…”

Section: Introductionmentioning

confidence: 99%

“…In general, while transparent conducting materials have gained widespread application [ 19,20 ] in the development of optoelectronic devices (such as photovoltaic cells, light‐emitting diodes, electrochromic panels, sensors, and PEC systems), the preparation of free‐standing highly porous transparent conducting substrates remains a significant challenge. Preparation routes for porous transparent conducting oxides have been reported via polymer templating, [ 21,22 ] oblique angle deposition, [ 23 ] sequential infiltration, [ 24 ] nanoparticle self‐assembly, [ 25–27 ] in situ deposition–etching, [ 28 ] and atomic layer deposition on porous non‐conducting scaffolds, [ 29 ] however the resulting pores are typically too small for the subsequent coating of a semiconducting layer while allowing for gas diffusion (which requires macropores [ 30 ] ). Moreover, these porous films have relatively poor conductivity while the deposition procedures rely on non‐porous solid support substrates (e.g., standard FTO/glass) so they cannot be used as GDEs.…”

Section: Introductionmentioning

confidence: 99%

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Transparent Porous Conductive Substrates for Gas‐Phase Photoelectrochemical Hydrogen Production

et al. 2023

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Gas diffusion electrodes are essential components of common fuel and electrolysis cells but are typically made from graphitic carbon or metallic materials, which do not allow light transmittance and thus limit the development of gas‐phase based photoelectrochemical devices. Herein, the simple and scalable preparation of F‐doped SnO2 (FTO) coated SiO2 interconnected fiber felt substrates is reported. Using 2–5 µm diameter fibers at a loading of 4 mg cm−2, the resulting substrates have porosity of 90%, roughness factor of 15.8, and Young's Modulus of 0.2 GPa. A 100 nm conformal coating of FTO via atmospheric chemical vapor deposition gives sheet resistivity of 20 ± 3 Ω sq−1 and loss of incident light of 41% at illumination wavelength of 550 nm. The coating of various semiconductors on the substrates is established including Fe2O3 (chemical bath deposition), CuSCN and Cu2O (electrodeposition), and conjugated polymers (dip coating), and liquid‐phase photoelectrochemical performance commensurate with flat FTO substrates is confirmed. Finally, gas phase H2 production is demonstrated with a polymer semiconductor photocathode membrane assembly at 1‐Sun photocurrent density on the order of 1 mA cm−2 and Faradaic efficiency of 40%.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Transparent Porous Conductive Substrates for Gas‐Phase Photoelectrochemical Hydrogen Production

et al. 2023

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“…The development of ITO thin films is of a great interest in the scientific community as a result of their interesting properties, which make them possible candidates for different applications, such as optoelectronic devices [ 1 , 2 , 3 ], transparent conductive oxides [ 4 ], solar cells [ 5 , 6 , 7 ], gas sensors [ 8 , 9 ], biosensors [ 10 , 11 , 12 ], thermoelectric applications [ 13 , 14 ], and so on. ITO thin films can be prepared by various physical (magnetron sputtering [ 15 , 16 , 17 , 18 , 19 ], pulsed lased deposition [ 20 ], ion beam sputtering [ 21 ], and electron beam evaporation [ 22 ]) and chemical methods (sol–gel method [ 23 , 24 ], spray pyrolysis [ 25 ], and low-temperature combustion synthesis method [ 26 ]).…”

Section: Introductionmentioning

confidence: 99%

Structural, Optical, and Sensing Properties of Nb-Doped ITO Thin Films Deposited by the Sol–Gel Method

Nicolescu

Mitrea

Hornoiu

et al. 2022

Gels

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The aim of the present study was the development of Nb-doped ITO thin films for carbon monoxide (CO) sensing applications. The detection of CO is imperious because of its high toxicity, with long-term exposure having a negative impact on human health. Using a feasible sol–gel method, the doped ITO thin films were prepared at room temperature and deposited onto various substrates (Si, SiO2/glass, and glass). The structural, morphological, and optical characterization was performed by the following techniques: X-ray diffractometry (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and UV/Vis/NIR spectroscopic ellipsometry (SE). The analysis revealed a crystalline structure and a low surface roughness of the doped ITO-based thin films. XTEM analysis (cross-sectional transmission electron microscopy) showed that the film has crystallites of the order of 5–10 nm and relatively large pores (around 3–5 nm in diameter). A transmittance value of 80% in the visible region and an optical band-gap energy of around 3.7 eV were found for dip-coated ITO/Nb films on SiO2/glass and glass supports. The EDX measurements proved the presence of Nb in the ITO film in a molar ratio of 3.7%, close to the intended one (4%). Gas testing measurements were carried out on the ITO undoped and doped thin films deposited on glass substrate. The presence of Nb in the ITO matrix increases the electrical signal and the sensitivity to CO detection, leading to the highest response for 2000 ppm CO concentration at working temperature of 300 °C.

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Promising novel transparent conductive F-doped ZnSnO3 thin films for optoelectronic applications

Radaf

2023

J Mater Sci: Mater Electron

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Anisotropic optical properties of indium tin oxide thin films prepared by ion beam sputtering under oblique angle deposition

Cited by 8 publications

References 58 publications

Transparent Porous Conductive Substrates for Gas‐Phase Photoelectrochemical Hydrogen Production

Transparent Porous Conductive Substrates for Gas‐Phase Photoelectrochemical Hydrogen Production

Structural, Optical, and Sensing Properties of Nb-Doped ITO Thin Films Deposited by the Sol–Gel Method

Promising novel transparent conductive F-doped ZnSnO3 thin films for optoelectronic applications

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