Anisotropic nonvolatile magnetization controlled by electric field in amorphous SmCo thin films grown on (011)-cut PMN-PT substrates

Liang, Wenhui; Hu, Fengxia; Zhang, Jian; Kuang, Hao; Li, Jia; Xiong, Jin; Qiao, Kaiming; Wang, Jing; Sun, Jianrong; Shen, Baogen

doi:10.1039/c8nr06449k

Cited by 16 publications

(6 citation statements)

References 65 publications

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“…The reversal M-E curve for our demagnetized Ta/CoFeB/(011)PMN-PT is different from that of a previous report 12) because of the demagnetization for the sample and the different strain-electric field relationship. 18) From all the M-E loops, the change in magnetization and variation of polarization switching current have good correspondence, which indicates the association between the magnetization variation and the FE polarization reorientation. The switching currents in PMN-PT are not equal in intensity under FE coercive fields in all the M-E loops mainly due to the internal electric field effect in (011)PMN-PT.…”

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confidence: 69%

“…Consequently, the remnant magnetization becomes smaller along with the increasing electric field. 12,18) Figure 2(a) shows the in-plane magnetic hysteresis (M-H) loops of the sample measured along the [100] direction under electric fields of 0 kV cm −1 , 4 kV cm −1 and 8 kV cm −1 . The remnant magnetization varies under different electric fields and the larger electric field induces smaller remnant magnetization, which corresponds to the mechanism illustrated in Figs.…”

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confidence: 99%

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X-ray magnetic circular dichroism investigation of electric field manipulation of magnetization reversal in Ta/CoFeB/(011)PMN-PT heterostructure

Zhao

Wang

Cui

et al. 2019

Appl. Phys. Express

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A tunable and nonvolatile magnetoelectric coupling effect and magnetization reversal in demagnetized Ta/CoFeB/(011)PMN-PT was obtained by applying electric fields without an external magnetic field. X-ray magnetic circular dichroism investigation under an in situ electric field indicates that the orbital magnetic moment to spin magnetic moment ratios of both Fe and Co are enhanced under the electric field. The ratio of Fe under negative electric field control is much larger than that under a positive electric field, while it remains almost unchanged for Co under different electric fields.

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confidence: 69%

mentioning

confidence: 99%

X-ray magnetic circular dichroism investigation of electric field manipulation of magnetization reversal in Ta/CoFeB/(011)PMN-PT heterostructure

Zhao

Wang

Cui

et al. 2019

Appl. Phys. Express

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“…There only exists one diffraction spot under +10 and +0 kV/cm, while two spots under −10 and −0 kV/cm. According to the reports on RSM of PMN-PT (59,60) and PZN-PT (FE phases similar to PMN-PT) (61), it can be deduced that the big spot in Fig. 4 (B and D) is related to the O phase of PMN-PT because of a larger [011] axis and smaller [100] axis compared with that of the R phase (Fig.…”

Section: Nonvolatile Electric Field Control Of Strain In Pmn-ptmentioning

confidence: 99%

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Sun,

Zhang,

Cao

et al. 2024

Sci. Adv.

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Magnetic tunnel junctions (MTJs) are the core element of spintronic devices. Currently, the mainstream writing operation of MTJs is based on electric current with high energy dissipation, and it can be notably reduced if an electric field is used instead. In this regard, it is promising for electric field control of MTJ in the multiferroic heterostructure composed of MTJ and ferroelectrics via strain-mediated magnetoelectric coupling. However, there are only reports on MTJs with in-plane anisotropy so far. Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated. Through local reciprocal space mapping under different electric fields for Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 beneath the MTJ pillar, the modulation mechanism is deduced. Our work represents a crucial step toward electric field control of spintronic devices with non–in-plane magnetic anisotropy.

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“…However, using single-phase multiferroic materials is challenging due to weak magnetoelectric coupling at room temperature [21]. Therefore, magneto-electric multiferroic heterostructure consisting of independent ferromagnet and ferroelectric have been explored as a promising candidate because of the significant magneto-electric coupling well above at the room temperature [22,23]. Magnetization manipulation has been realized through different routes, including charge coupling, exchange coupling, strain coupling, etc.…”

Section: Introductionmentioning

confidence: 99%

Angle Selective Piezoelectric Strain Controlled Magnetization Switching in Artificial Spin Ice Based Multiferroic System

Chaurasiya¹,

Anand²,

Rawat³

2021

Preprint

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The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the electric field-induced strain mediated magnetization switching in artificial spin ice (ASI) based multiferroic system, which is proposed to have a significant decrease in Joule heating losses compared to electric current based methods. As the piezoelectric strain-based system cannot switch the magnetization by 180 • in ferromagnets, we propose an ASI multiferroic system consisting of the peanut-shaped nanomagnets on ferroelectric substrate with the angle between the easy axis and hard axis of magnetization less than 90 • . Here the piezoelectric strain-controlled magnetization switching has been studied by applying the electric field pulse at different angles with respect to the axes of the system. Remarkably, magnetization switches by 180 • only if the external electric field pulse is applied at some specific angles, close to the anisotropy axis of the system (∼ 30 • − 60 • ). Our detailed analysis of the demagnetization energy variation reveals that the energy barrier becomes antisymmetric in such cases, facilitating the complete magnetization reversal. Moreover, we have also proposed a possible magnetization reversal mechanism with two sequential electric field pulses of relatively smaller magnitude. We believe that the present work could pave the way for future ASI-based multiferroic system for scalable magnetic field-free low power spintronics devices.

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Anisotropic nonvolatile magnetization controlled by electric field in amorphous SmCo thin films grown on (011)-cut PMN-PT substrates

Abstract: Anisotropic nonvolatile magnetization and a two-state memory effect is demonstrated in an amorphous SmCo film with uniaxial-anisotropy and hard magnetic properties.

Cited by 16 publications

References 65 publications

X-ray magnetic circular dichroism investigation of electric field manipulation of magnetization reversal in Ta/CoFeB/(011)PMN-PT heterostructure

X-ray magnetic circular dichroism investigation of electric field manipulation of magnetization reversal in Ta/CoFeB/(011)PMN-PT heterostructure

Electric field control of perpendicular magnetic tunnel junctions with easy-cone magnetic anisotropic free layers

Angle Selective Piezoelectric Strain Controlled Magnetization Switching in Artificial Spin Ice Based Multiferroic System

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