Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility Three-Dimensional Dirac SemimetalCd3As2

Abstract

Three-dimensional topological Dirac semimetals have a linear dispersion in 3D momentum space and are viewed as the 3D analogues of graphene. Here, we report angle-dependent magnetotransport on the newly revealed Cd 3 As 2 single crystals and clearly show how the Fermi surface evolves with crystallographic orientations. Remarkably, when the magnetic field lies in the [112] or ½441 axis, magnetoresistance oscillations with only single period are present. However, the oscillation shows double periods when the field is applied along the ½110 direction. Moreover, aligning the magnetic field at certain directions also gives rise to double period oscillations. We attribute the observed anomalous oscillation behavior to the sophisticated geometry of Fermi surface and illustrate a complete 3D Fermi surface with two nested anisotropic ellipsoids around the Dirac points. Additionally, a submillimeter mean-free path at 6 K is found in Cd 3 As 2 crystals, indicating ballistic transport in this material. By measuring the magnetoresistance up to 60 T, we reach the quantum limit (n ¼ 1 Landau level) at about 43 T. These results improve the knowledge of the Dirac semimetal material Cd 3 As 2 and also pave the way for proposing new electronic applications based on 3D Dirac materials.

Pressure-induced superconductivity in the three-dimensional topological Dirac semimetal Cd3As2

“…[18][19][20][21][22][23][24][25][26][27][28][29] As a 3D analogue to graphene, the Fermi surface of the 3D Dirac semimetal only consists of 3D Dirac points with linear energy dispersion in any momentum direction. 19,23 The exotic Fermi surface of Na 3 Bi and Cd 3 As 2 was confirmed by the angle-resolved photoemission spectroscopy experiments.…”

“…On the basis of quantum transport measurement, a non-trivial π Berry's phase is obtained, which provides bulk evidence for the existence of 3D Dirac semimetal phase in Cd 3 As 2 . 28,29 By symmetry breaking, this 3D Dirac semimetal may be driven to a topological insulator or Weyl semimetal. 23 More interestingly, it was predicted that topological superconductivity may be achieved in Cd 3 As 2 by carrier doping, 23 but this has not been realised so far.…”

Ultrafast Broadband Photodetectors Based on Three-Dimensional Dirac Semimetal Cd3As2

“…On the other hand, 3D Dirac semimetals possess all advantages of 2D Dirac semimetals as photosensitive materials, which is inherent from the gapless linear dispersion of massless Dirac Fermions: extermely high mobility 9 and ultrafast transient time 15 for high speed response approaching terahertz operation speed 4,16 ; gapless bandstructure for chanlleging low energy photon detection 17 down to THz frequency [18][19][20] and efficient carrier multiplications to enhance the internal quantum efficiency 21,22 . Consequently, the emergency of stable 3D Dirac semimetal Cd3As2 provides outstanding opportunity as new class of material platform for optoelectronics.Experimental studies on Cd3As2 so far mainly focus on the tranport and angle resolved photoemission spectroscopy (ARPES) measurements to confirm 3D Dirac semimetal phase and its related electronic behavior near the Fermi level, such as giant magnetoresistance (MR), non-trivial quantum oscillations and landau level splitting under magnetic field 10,[23][24][25] . Despite the potential exceptional optical properties, the photonic and optoelectronical response of 3D Dirac semimetal is largely unexplored 26 .…”

“…Experimental studies on Cd3As2 so far mainly focus on the tranport and angle resolved photoemission spectroscopy (ARPES) measurements to confirm 3D Dirac semimetal phase and its related electronic behavior near the Fermi level, such as giant magnetoresistance (MR), non-trivial quantum oscillations and landau level splitting under magnetic field 10,[23][24][25] . Despite the potential exceptional optical properties, the photonic and optoelectronical response of 3D Dirac semimetal is largely unexplored 26 .…”

Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates

“…6,7 Another physical mechanism for large MR effects are magnetic field induced metal-insulator transitions in special transition metal oxides and ferromagnetic semiconductors. 8,9 In such materials the negative MR, which is called "colossal", can exceed 100,000 % at 77 K and fields of 6 T. 10 In manganese-substituted zinc oxide the magnetically induced transition from hopping to band conduction leads to a giant negative MR of more than 200 % at 1.4 K and 12 T. 11 Recently, it has been supposed that under hopping conditions even quantum interferences can cause a giant negative MR. 12 Topological semimetals 13,14 and insulators 15 with complex band structure and high mobility carriers demonstrate anomalous, large positive and negative MR, too. Extremely large positive MRs up to 750,000 % have been obtained in semiconductor structures with extrinsic 16 or intrinsic inhomogeneities.…”