Anisotropic broadening of linewidth in the EPR spectrum of Feo in silicon

Gehlhoff, W.; Segsa, K. H.

doi:10.1002/pssa.2210410149

Cited by 11 publications

(4 citation statements)

References 6 publications

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“…This broadening depends on the angle between magnetic field and crystal axes even for defects of otherwise cubic symmetry ͑see for example interstitial iron in silicon͒. 26,27 In the present problem there is a strong fine structure interaction caused by the monoclinic arrangement of the defects. The corresponding definite values of the fine structure parameters D 0 and E 0 are varied by contributions due to the randomly distributed strains.…”

Section: A Angular Dependencies Of Effective G Values and Linewidthsmentioning

confidence: 81%

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Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Juda¹,

Scheerer²,

Höhne³

et al. 1996

Journal of Applied Physics

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A monoclinic 1-platinum defect recently detected was investigated more thoroughly by electron paramagnetic resonance ͑EPR͒. The defect is one of the dominating defects in platinum doped silicon. With a perfect reproducibility it is observed in samples prepared from n-type silicon as well as from p-type silicon, in float zone ͑FZ͒ silicon as well as in Czochralski ͑Cz͒ silicon. Its concentration varies with the conditions of preparation and nearly reaches that of isolated substitutional platinum in Cz silicon annealed for 2 h at 540°C after quenching from the temperature of platinum diffusion. Because of its concentration which in Cz-Si exceeds that in FZ-Si the defect is assumed to be oxygen-related though a hyperfine structure with 17 O could not be resolved. The defect causes a level close to the valence band. This is concluded from variations of the Fermi level and from a discussion of the spin Hamiltonian parameters. In photo-EPR experiments the defect is coupled to recently detected acceptorlike self-interstitial related defects ͑SIRDs͒; their level position turns out to be near-midgap. These defects belong to the lifetime limiting defects in Pt-doped Si.

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Section: A Angular Dependencies Of Effective G Values and Linewidthsmentioning

confidence: 81%

“…For these strains one might assume distribution functions as usual. [25][26][27] This assumption results in a Gaussian distribution for the value of ϵE/D about the value of 0…”

Section: A Angular Dependencies Of Effective G Values and Linewidthsmentioning

confidence: 99%

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Juda¹,

Scheerer²,

Höhne³

et al. 1996

Journal of Applied Physics

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“…There is a controversial discussion as to the origin of the large reduction of the orbital angular momentum factor g l of the g factor of the ground state gϭ 5 3 g s Ϫ 2 3 g l measured in EPR. This reduction has been interpreted in the literature assuming that Si:Fe i ϩ is a Jahn-Teller ͑JT͒ system showing a Ham effect.…”

Section: Introductionmentioning

confidence: 99%

Ground-state properties of isolated interstitial iron in silicon: Electronic structure and hyperfine interactions

Weihrich

Overhof

1996

Phys. Rev. B

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We have performed ab initio total energy calculations for interstitial iron in silicon with particular emphasis on the matrix elements for the hyperfine interactions with the iron nucleus and with several silicon ligand nuclei. The total energy calculations have been performed in the general framework of the density functional theory ͑DFT͒ treating many-particle effects in the local spin-density approximation ͑LSDA͒. We use a Dyson's equation approach to solve the Kohn-Sham equation of the density functional theory and calculate the Green's function with the help of the linear muffin-tin orbital theory using the atomic-spheres approximation ͑ASA͒. Unfortunately the use of the ASA prohibits the inclusion of lattice relaxation effects. Our total energy calculations lead to a model for the electronic structure which is dominated by covalent hybridization of iron d states with silicon p states. From the results of our calculations we can easily explain the reaction of the electronic system when passing from Fe i 0 to Fe i ϩ . To this aim we slightly modify the Ludwig-Woodbury model: In a first step we consider the exchange splitting of the iron d states which in a second step are further split by the crystal field. The hyperfine matrix elements for Si:Fe i 0 are calculated directly from the magnetization density obtained by the LSDA-DFT calculation and show excellent agreement with data from electron nucleus double resonance ͑ENDOR͒ experiments. For Si:Fe i ϩ we have to take into account the spin-orbit interaction of the iron d orbitals. Since our total energy calculations neglect spin-orbit interactions, we switch to a description which uses symmetry-adapted many-particle wave functions. With these functions we calculate the matrix elements for the hyperfine interaction with the iron nucleus and with several silicon ligand nuclei. We use the localization properties of our magnetization density to determine the many-particle wave function and to obtain data for the hyperfine interactions. We show that the covalent hybridization of the iron d states with iron p states and with silicon orbitals alone cannot explain the discrepancy between calculated and measured data for the hyperfine interaction with the iron nucleus. However, the additional consideration of a dynamical JahnTeller effect as a Ham effect leads to consistent data. The calculated data for the ligand hyperfine interaction allow one to definitely assign ligand shells to the measured ENDOR data. ͓S0163-1829͑96͒04431-1͔

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“…After heating and quenching all samples showed a nearly isotropic FeO EPR signal with a peak-to-peak linewidth AB,, < 0.2 mT. Assuming an intrinsic linewidth of 0.1 mT and Gaussian distributions with the halfwidthsa and j3 of the remaining normal and tangential stresses, respectively, the parameters 01 and j3 were determined from the weak angular dependent EPR line broadening [9]. For samples carefully prepared as described above the values are n = (1.9 f 0.2) x 105 Pa and B = (1.2 f 0.2) x lo6 Pa, and without special care during preparation they were found in the ranges (0.5 to 1) x lo6 Pa and (2.5 to 3) x lo6 Pa, respectively.…”

Section: Preparation Of Starting Samplesmentioning

confidence: 99%

Determination of Stresses in SiSiO₂ and Mechanically Affected Si by EPR

Gehlhoff¹,

Segsa²

1983

Physica Status Solidi (b)

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The influence of stresses generated by roughening or oxidation of silicon samples on the E P R spectra of Be0 in silicon is investigated. Starting from previous calculations it is possible to explain the changes in the angular dependence of the spectra, and to determine the stress components in the SiO, film and in the Si surface affected by roughening. The stress values determined by the E P R analysis are compared with the results obtained by other methods.Der EinfluB der durch Aufrauhung oder Oxydation von Siliziumproben erzeugten Spannungen auf die E P R Spektren von Feoin Silizium wird untersucht. Ausgehend von friiheren Berechnungen konnen die winkelabhangigen Bnderungen der Spektren erklart und die Spannungskomponenten im SiO,-Film und in der durch Aufrauhung beeintrachtigten Siliziumoberflache bestimmt werden. Die durch die E P R Analyse bestimmten Werte werden mit den Ergebnissen verglichen, die mit anderen Methoden erhalten wurden.

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Anisotropic broadening of linewidth in the EPR spectrum of Feo in silicon

Cited by 11 publications

References 6 publications

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Ground-state properties of isolated interstitial iron in silicon: Electronic structure and hyperfine interactions

Determination of Stresses in SiSiO₂ and Mechanically Affected Si by EPR

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Anisotropic broadening of linewidth in the EPR spectrum of Feo in silicon

Cited by 11 publications

References 6 publications

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Oxygen-related 1-platinum defects in silicon: An electron paramagnetic resonance study

Ground-state properties of isolated interstitial iron in silicon: Electronic structure and hyperfine interactions

Determination of Stresses in SiSiO2 and Mechanically Affected Si by EPR

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Determination of Stresses in SiSiO₂ and Mechanically Affected Si by EPR