Anion-site-modulated thermoelectric properties in Ge2Sb2Te5-based compounds

Hu, Ping; Wei, Tian‐Ran; Huang, Shaoji; Xia, X.X.; Qiu, Pengfei; Yang, Jiong; Chen, Lidong

doi:10.1007/s12598-020-01476-4

Cited by 13 publications

(14 citation statements)

References 36 publications

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“…As shown in Figure 8b, the zT max and zT ave of Ge 0.93 In 0.07 Sb 2 Te 4 single crystal in this work are much higher than the reported values in polycrystalline GST system (including GST124, GST225, and GST147) in the literature. [37][38][39][40][41] It should be noted that in a series of samples, the highest zT max and zT ave is not necessary to be obtained in the same sample, since the optimized carrier density for the highest zT max may be slightly different from that for the highest average zT. Here we got them in the same sample, which may be just because the optimized carrier concentration for them is pretty close, or the In-doping step we chose is too large.…”

Section: Dimensionless Figure Of Meritmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Owing to the high hole concentration, the peak zT of pristine GST124 is 0.6 at 750 K. [37] When element In was doped into polycrystalline GST225, there is a remarkable impurity band in the bandgap, which contributes to enhanced effective mass of holes and Seebeck coefficient, leading to a maximal zT value of 0.78 at 703 K. [38] By alloying Se/S at the anionic site in polycrystalline GST225, maximum zT values of 0.71 and 0.74 at 800 K have been obtained in Ge 2 Sb 2 Te 3.9 Se 1.1 and Ge 2 Sb 2 Te 4.9 S 0.1 , respectively. [39] Du et al improved the TE performance of polycrystalline GST225 by substituting Te with Se. [40] Welzmiller et al reported that Cr doping in GST124 leads to a higher Seebeck coefficient, resulting in a peak zT of 0.3 at 723 K. [41] Recently, we reported a proof-of-principle atomic scale bottomup configurational entropy design in pristine GST124 single crystal, shedding light on the relation between configurational entropy and thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

“…Figure 8. a) Temperature-dependent zT of Ge 1-x In x Sb 2 Te 4 single crystal simples along the a-axis and c-axis. b) A comparison of maximum and averagezT values of (GeTe) m (Sb 2 Te 3 ) n systems [37][38][39][40][41]. …”

mentioning

confidence: 99%

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Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb₂Te₄ Single Crystals

Chen

Zhang

et al. 2023

Adv Funct Materials

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Layer-structured GeSb 2 Te 4 is a promising thermoelectric candidate, while its anisotropy of thermal and electrical transport properties is still not clear. In this study, Ge 1-x In x Sb 2 Te 4 single crystals are grown by Bridgman method, and their anisotropic thermoelectric properties are systematically investigated. Lower electrical conductivity and higher Seebeck coefficient are observed in the c-axis due to the higher effective mass in this direction. Intrinsically low lattice thermal conductivity is also observed in the c-axis due to the weak chemical bonding and the strong lattice anharmonicity proved by density functional theory calculation. Indium doping introduces an impurity band in the bandgap of GeSb 2 Te 4 and leads to the locally distorted density of states near the Fermi level, which contributes to enhanced Seebeck coefficient and improved power factor. Ultimately, a peak zT value of 1 at 673 K and an average zT value of 0.68 within 323-773 K are obtained in Ge 0.93 In 0.07 Sb 2 Te 4 along the c-axis direction, which are 54% and 79% higher than that of the pristine GeSb 2 Te 4 single crystal, respectively. This study clarified the origin of intrinsic low lattice thermal conductivity and anisotropy transport properties in GeSb 2 Te 4 , and shed light on the performance optimization of other layered thermoelectric materials.

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Section: Dimensionless Figure Of Meritmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb₂Te₄ Single Crystals

Chen

Zhang

et al. 2023

Adv Funct Materials

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“…Alloying provides a large room for tuning the transport and mechanical properties. [120][121][122] When S atoms in Ag 2 S are partially replaced by Se or Te atoms, the AgQ bond shall become less ionic, favoring enhanced electrical conductivity and thermoelectric performance. [84,123] Meanwhile, the marvel plasticity may be retained in S-rich alloys.…”

Section: Ag 2 S-ag 2 Se-ag 2 Te Alloys: Phase Structure Thermoelectri...mentioning

confidence: 99%

Ag₂Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

et al. 2022

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should have a high electrical conductivity (σ), a high Seebeck coefficient (S), and a low thermal conductivity (κ). [6][7][8][9] Cu 2 Q-and Ag 2 Q-based (Q = S, Se, Te) chalcogenides are exemplified with partially decoupled electrical and thermal transports. Over the past decade, Cu 2 Q materials have been widely investigated, showcasing remarkable zT values (around 2.0) at high temperatures. [10][11][12][13][14] As the homologous compounds sharing some common features, Ag 2 Q-based silver chalcogenides have arisen as a new spotlight in thermoelectrics (Figure 1) in recent years. Notably, the high zT values near unity of Ag 2 Se [15][16][17] make it a potential candidate for room-temperature thermoelectric application. In fact, Ag 2 Q compounds are "old" materials whose discovery can be traced back to the 19th century. [18][19][20] Their thermoelectric properties were first reported in the 1940s-1960s during which decent performance of Ag 2 Se and Ag 2 Te was unveiled. [21][22][23][24][25][26] After that, the study on Ag 2 Q had faded out over decades accompanying the low ebb of thermoelectric research. [27,28] Upon the turn of the century, especially over the last 10 years, the revival has come for thermoelectrics, bringing about great progress in transport theories, [29][30][31][32][33] advanced synthesis, [34][35][36][37] and characterization techniques, [38][39][40] and even the research paradigm. [41][42][43] All these progresses have boosted zT from 1 to 2 in not a few new or old thermoelectric materials. [44][45][46][47][48] In the same period, the booming of flexible/wearable electronics necessitates thermoelectric materials having both high performance and deformability at room temperature. [49][50][51][52] All these factors inspire people to revisit Ag 2 Q-based materials.Ag 2 Q-based materials exhibit a low lattice thermal conductivity originating from the large disorder or even liquid-like behavior of Ag ions. [53][54][55][56] They tend to show n-type conduction with a high electron mobility. [15,57,58] Apart from the thermoelectric properties, an exceptional room-temperature plasticity has been found in Ag 2 S-based materials (Figure 1), [59] which is quite rare and valuable for inorganic semiconductors. [60] Beyond the binary compounds, several ternary and even quaternary Ag 2 (S, Se, Te) alloys have been developed, exhibiting both high zT values and excellent plastic deformability. [54,[61][62][63] In addition, CuAgQ materials, the intermediate compounds between Ag 2 Q and Cu 2 Q, have also received wide attention as promising thermoelectric materials. [64][65][66][67] Considering the new, intriguing scientific issues and great application prospects of Ag 2 Q-based silver chalcogenide thermoelectric materials, here in this review, we try to provide the Thermoelectric technology provides a promising solution to sustainable energy utilization and scalable power supply. Recently, Ag 2 Q-based (Q = S, Se, Te) silver chalcogenides have come forth as potential thermoelectric materials that are endowed wi...

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Flexible Thermoelectrics Based on Plastic Inorganic Semiconductors

Chen

Wang

Luo

et al. 2023

Adv Materials Technologies

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Flexible thermoelectrics, including flexible thermoelectric materials and devices, can generate electricity by utilizing the small temperature difference between the human body and surrounding environment, exhibiting great potential for the continuous powering of wearable devices. It has long been assumed that inorganic thermoelectric materials are usually brittle at room temperature except for size‐induced flexibility. Until recently, this perception has been overturned by the discovery of inorganic semiconductors with intrinsic plastic deformability. Herein, this review provides a comprehensive summary of the recently burgeoning plastic inorganic semiconductors in thermoelectrics. First the requirements to thermoelectric materials are introduced by flexible thermoelectrics. Then, the mechanical properties and potential plastic deformation mechanisms at the atomic level of plastic inorganic semiconductors are systematically summarized. Subsequently, the optimization strategies for the mechanical and thermoelectric properties of plastic inorganic semiconductors, such as doping and alloying, are summarized. Furthermore, the advantages of plastic inorganic semiconductors in flexible thermoelectric devices and their potential applications in wearable electronic devices are also highlighted. Finally, the current challenges are presented and future directions are predicted, including high‐throughput screening methods for plastic inorganic semiconductor materials and the development and application of flexible inorganic thermoelectric materials.

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Anion-site-modulated thermoelectric properties in Ge2Sb2Te5-based compounds

Cited by 13 publications

References 36 publications

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb₂Te₄ Single Crystals

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb₂Te₄ Single Crystals

Ag₂Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

Flexible Thermoelectrics Based on Plastic Inorganic Semiconductors

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Anion-site-modulated thermoelectric properties in Ge2Sb2Te5-based compounds

Cited by 13 publications

References 36 publications

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb2Te4 Single Crystals

Ag2Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials

Flexible Thermoelectrics Based on Plastic Inorganic Semiconductors

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Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb₂Te₄ Single Crystals

Intrinsically Low Lattice Thermal Conductivity and Anisotropic Thermoelectric Performance in In‐doped GeSb₂Te₄ Single Crystals

Ag₂Q‐Based (Q = S, Se, Te) Silver Chalcogenide Thermoelectric Materials