2019
DOI: 10.1103/physrevlett.122.125701
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Anharmonic and Anomalous Trends in the High-Pressure Phase Diagram of Silicon

Abstract: A multifaceted first-principles approach utilizing density functional theory, evolutionary algorithms, and lattice dynamics was used to construct the phase diagram of silicon up to 4 TPa and 26000 K. These calculations predicted that (1) an anomalous sequence of face-centered cubic (fcc) to body-centered cubic (bcc) to simple cubic (sc) crystalline phase transitions occur at pressures of 2.87 TPa and 3.89 TPa, respectively, along the cold curve; (2) the orthorhombic phases of Imma and Cmce-16 appear on the pha… Show more

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Cited by 18 publications
(6 citation statements)
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“…Although the quantum mechanics ab initio simulations paved a promising way for researches on the properties from the atomic scale [3][4][5][6] and progress has been achieved in predicting the structural stability by the global optimization algorithms [7][8][9][10][11] that commonly adopt the criteria of potential energy or enthalpy obtained by electronicstructure computations within the Born-Oppenheimer approximation at T = 0K, it remains a challenge to precisely describe the realistic scenarios at finite temperatures [12,13], in the cases of which the thermodynamic effects have to be taken into account due to nucleus vibrations [14] and the free energy (FE) that incorporates additional kinetic energy and entropy is the very criterion to determine the equilibrium structural phase [15]. Based on ab initio computations, the phonon model within the quasi-harmonic approximation is widely used in order to include the thermal contributions to the FE [16][17][18][19][20] while the model would still produce unsatisfactory results of thermal expansion coefficient or conductivity [21][22][23][24].…”
mentioning
confidence: 99%
“…Although the quantum mechanics ab initio simulations paved a promising way for researches on the properties from the atomic scale [3][4][5][6] and progress has been achieved in predicting the structural stability by the global optimization algorithms [7][8][9][10][11] that commonly adopt the criteria of potential energy or enthalpy obtained by electronicstructure computations within the Born-Oppenheimer approximation at T = 0K, it remains a challenge to precisely describe the realistic scenarios at finite temperatures [12,13], in the cases of which the thermodynamic effects have to be taken into account due to nucleus vibrations [14] and the free energy (FE) that incorporates additional kinetic energy and entropy is the very criterion to determine the equilibrium structural phase [15]. Based on ab initio computations, the phonon model within the quasi-harmonic approximation is widely used in order to include the thermal contributions to the FE [16][17][18][19][20] while the model would still produce unsatisfactory results of thermal expansion coefficient or conductivity [21][22][23][24].…”
mentioning
confidence: 99%
“…If phase transitions occur in shock compressed boron at the same pressure-temperature conditions as those expected by the equilibrium phase diagram, the Hugoniot would have two major discontinuities, one at 15 GPa and the other at 80 GPa, corresponding to the phase boundaries of α-B 12 ↔γ-B 28 and γ-B 28 ↔α-Ga, respectively. Following the DFT-based structural equilibrium picture, melting along the Hugoniot occurs for the α-Ga phase at 2500-3500 K and 200 GPa, unless some other unknown structure stabilizes over α-Ga at 100 GPa and 2000 K, which is not unlikely considering the fact that high temperature phases can be stabilized by high pressure in other elemental systems such as beryllium [36] and silicon [37].…”
Section: Resultsmentioning
confidence: 99%
“…Figure a shows the calculated Gibbs free energy for bulk Si-I, II, XI, and V phases (solid lines) at T = 300 K from ref (Si-II as the reference), in which Si-II has the lowest free energy between 12 and 14 GPa, and Si-XI and Si-V are the most stable phases between 14–16 and 16–33 GPa, respectively. As a consequence, Si goes through a phase transition sequence of Si-I → II → XI → V (shown by the black dotted line) under compression, consistent with experimental results.…”
Section: Discussionmentioning
confidence: 99%
“…(a) Calculated Gibbs free energy for bulk Si-I (solid blue line), II (solid green line), XI (solid orange line), and V (solid red line) phases at T = 300 K from ref (Si-II as the reference). Schematic diagram of the phase transition paths in bulk Si (black dotted line), SiNWs (pink dash-dotted line), and small SiNPs (purple dashed line) are also combined with the simulation results.…”
Section: Discussionmentioning
confidence: 99%