Angular effects in proton-induced single-event upsets in silicon-on-sapphire and silicon-on-insulator devices

McCabe, J.F.; Gardner, G.; Lintz, J.; Ross, C.; Golke, K.; Bums, B.; Sanders, Anthony B.; Reed, Robert A.; LaBel, Kenneth A.; Marshall, P.W.; Liu, S.T.; Kim, H.S.; Forney, James D.; Tabbert, Chuck; Carts, M.A.; Swonger, J.

doi:10.1109/redw.2004.1352916

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…Decrease in single-event cross section with increasing angle can also occur in sensitive volumes that have certain aspect ratios (depth comparable to or greater than the areal dimension) [3], [4]. High aspect ratio sensitive volumes have also been observed in thin-film silicon-on-insulator devices [5]. The SRAM studied in this work is not SOI and does not use deep trench isolation, and the transistor junctions do not have extreme aspect ratios.…”

Section: Introductionmentioning

confidence: 76%

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Alles

Schrimpf

Massengill

et al. 2014

IEEE Trans. Nucl. Sci.

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A marked state dependence and significant reduction in SEU cross section with even small increases in incident angle are reported in an asymmetric RC-hardened 90 nm CMOS SRAM. The effects are attributable to the bias dependence and high aspect ratio of the deep trench capacitor sidewall depletion region, exacerbated by process-induced boron depletion. The asymmetric implementation, using capacitive hardening in only one leg of the SRAM cell, led to the appearance of the effect in experimental results.

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Section: Introductionmentioning

confidence: 76%

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Alles

Schrimpf

Massengill

et al. 2014

IEEE Trans. Nucl. Sci.

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“…The interest seems to be mainly focused on proton-induced SEE [18], [19], but some heavy ions data have also been reported [20], [21]. For these advanced devices, funneling effect does not apply [22] and in most cases the observed angular effects are interpreted in term of nuclear reactions.…”

Section: Introductionmentioning

confidence: 99%

Angular Dependence of SOI Transistor Response to Heavy Ion Irradiation

Raine

Gaillardin

Paillet

et al. 2010

IEEE Trans. Nucl. Sci.

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Experimental results showing angular dependence for charge collection in SOI transistors under heavy ion irradiation are presented. Geant4 and Synopsys Sentaurus simulations are performed to analyze these results in terms of direct ionization effects. The influence of the beam direction in relation to that of the transistor's channel on the transistor's response is underlined. Depending on the considered beam direction, deviation from the inverse-cosine law is shown to vary from 0% to 30%. These differences seem to be independent of the ion energy. However, the use of different ion species may hide this possible effect.

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Simulation test technique for nuclear and space radiation effects

Chen¹,

Luo²,

Ma³

et al. 2023

Sci. Sin.-Phys. Mech. Astron.

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Angular effects in proton-induced single-event upsets in silicon-on-sapphire and silicon-on-insulator devices

Abstract: A b s f r e W e present new data in the ongoing ef€oH to b m d the effect of proton angle of incidence on the singleevent upset (SEU) rate in silicon-on-sapphire (SOS) and silicon-on-insulator (SO0 devices.

Cited by 3 publications

References 3 publications

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors

Angular Dependence of SOI Transistor Response to Heavy Ion Irradiation

Simulation test technique for nuclear and space radiation effects

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