“…[6][7][8]10,11,13,14,16 A vacancyinduced structure in valence-band ͑VB͒ spectra was not observed in earlier experimental UPS studies of substoichiometric vanadium nitrides while a pronounced vacancyinduced peak appeared in the XPS results. 5,8 In fact, the vacancy-induced states show up in emission spectra only for excitation photon energies above 30 eV as demonstrated by Indlekofer et al and Lindström et al 8,10 Similar effects were reported for TiN y , which is the most investigated material. 6,7,11,12 In the present article, we focus on the electronic structure of the Ti-V-N system, in particular substoichiometric sputtered VN y films.…”