Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Tan, Jian; Büttgen, Bernhard; Theuwissen, Albert

doi:10.1109/jsen.2012.2186287

Cited by 43 publications

(39 citation statements)

References 17 publications

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“…For robotic applications, weight and ease of integration are important, making commercial unshielded sensors the logical choice. If the sensor designer is making a custom radiation hardened sensor, potentially the radiation response of only the transducers is of primary interest such as in [40]. In this case, the transducer can be irradiated to dose steps by itself and then inserted into a measurement system for characterization.…”

Section: Methodsmentioning

confidence: 99%

System Health Awareness in Total-Ionizing Dose Environments

Diggins

Mahadevan

Pitt

et al. 2015

IEEE Trans. Nucl. Sci.

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Section: Methodsmentioning

confidence: 99%

System Health Awareness in Total-Ionizing Dose Environments

Diggins

Mahadevan

Pitt

et al. 2015

IEEE Trans. Nucl. Sci.

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“…The shift with increasing exposure is shown in Figure 6 (Ref. 78). This effect can be greatly reduced through layout design using an enclosed layout (Figure 7 (Ref.…”

Section: Ti Ptmentioning

confidence: 97%

“…X-ray radiation can have notably harmful effects on operation of MOS devices, and exposure to X-rays can shift the transistor characteristics 78 . The shift with increasing exposure is shown in Figure 6 (Ref.…”

Section: Ti Ptmentioning

confidence: 99%

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Precision in harsh environments

2016

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Microsystems are increasingly being applied in harsh and/or inaccessible environments, but many markets expect the same level of functionality for long periods of time. Harsh environments cover areas that can be subjected to high temperature, (bio)-chemical and mechanical disturbances, electromagnetic noise, radiation, or high vacuum. In the field of actuators, the devices must maintain stringent accuracy specifications for displacement, force, and response times, among others. These new requirements present additional challenges in the compensation for or elimination of cross-sensitivities. Many state-of-the-art precision devices lose their precision and reliability when exposed to harsh environments. It is also important that advanced sensor and actuator systems maintain maximum autonomy such that the devices can operate independently with low maintenance. The next-generation microsystems will be deployed in remote and/or inaccessible and harsh environments that present many challenges to sensor design, materials, device functionality, and packaging. All of these aspects of integrated sensors and actuator microsystems require a multidisciplinary approach to overcome these challenges. The main areas of importance are in the fields of materials science, micro/nano-fabrication technology, device design, circuitry and systems, (first-level) packaging, and measurement strategy. This study examines the challenges presented by harsh environments and investigates the required approaches. Examples of successful devices are also given.

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“…Different pinning voltage extraction techniques have been proposed in [8], [13] and [14]. In this paper, V pin has been extracted from the pinning voltage characteristic [13] with the integral method proposed by Goiffon et al in [14].…”

Section: Pinning Voltage Temperature Dependencementioning

confidence: 99%

Temperature Dependence and Dynamic Behavior of Full Well Capacity in Pinned Photodiode CMOS Image Sensors

Pelamatti

Belloir

Messien

et al. 2015

IEEE Trans. Electron Devices

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This paper presents an analytical model of the full well capacity (FWC) in pinned photodiode (PPD) CMOS image sensors. By introducing the temperature dependence of the PPD pinning voltage, the existing model is extended (with respect to previous works) to consider the effect of temperature on the FWC. It is shown, with the support of experimental data, that whereas in dark conditions the FWC increases with temperature, a decrease is observed if FWC measurements are performed under illumination. This paper also shows that after a light pulse, the charge stored in the PPD drops as the PPD tends toward equilibrium. On the basis of these observations, an analytical model of the dynamic behavior of the FWC in noncontinuous illumination conditions is proposed. The model is able to reproduce experimental data over six orders of magnitude of time. Both the static and dynamic models can be useful tools to correctly interpret FWC changes following design variations and to accurately define the operating conditions during device characterizations.Index Terms-Active pixel sensor (APS), analytical modeling, capacitance, CMOS image sensor (CIS), dynamic behavior, full well capacity (FWC), modeling, pinned photodiode (PPD), pinning voltage, temperature.

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Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors

Cited by 43 publications

References 17 publications

System Health Awareness in Total-Ionizing Dose Environments

System Health Awareness in Total-Ionizing Dose Environments

Precision in harsh environments

Temperature Dependence and Dynamic Behavior of Full Well Capacity in Pinned Photodiode CMOS Image Sensors

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