Analytical treatment of Trivich–Flinn and Shockley–Queisser photovoltaic efficiency limits using polylogarithms

Green, Martin A.

doi:10.1002/pip.1120

Cited by 13 publications

(9 citation statements)

References 15 publications

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“…To calculate the loss due to the occultation by DC layer (

η_{EQE}^{loss}

) of 14% of the incident energy on the sc , we assume no DC effect (

η_{conv}^{DC \to 980} = 100 %)

and full extraction (

η_{extrac}^{980} = 100 %

) for the sc . The efficiency calculated for the AM1.5G spectra in the extended Shockley–Queisser approach, gives a

η_{sc}^{400}

of 3.5%. at a 400 nm (3.1 eV) wavelength, corresponding to the middle of the DC range.…”

Section: Additional External Quantum Efficiency Evaluationmentioning

confidence: 96%

“…This efficiency can be obtained at 980 nm (1.26 eV) using the efficiency versus band gap calculated for the AM1.5G spectra in the extended Shockley–Queisser approach . At 980 nm, the

η_{sc}^{980}

is found to be equal to 32.9%.…”

Section: Additional External Quantum Efficiency Evaluationmentioning

confidence: 97%

“…Therefore the

η_{EQE}^{with}

can be rewritten by the equations and :

\begin{matrix} true \\ right η_{EQE}^{with} = η_{sc}^{980} ((), \frac{ϕ_{DC}}{ϕ_{sun}}) ((), \frac{ϕ_{DC}^{'}}{ϕ_{DC}}) ((), \frac{ϕ_{sc}^{'}}{ϕ_{DC}^{'}}) \end{matrix}

\begin{matrix} true \\ right η_{EQE}^{with} = η_{sc}^{980} . η_{a b s}^{DC} . η_{conv}^{DC \to 980} . η_{extrac}^{980} \end{matrix}

where,

η_{a b s}^{DC}

η_{conv}^{DC \to 980}

, and

η_{extrac}^{980}

are the different efficiencies linked respectively to the different terms of the equation . These four efficiencies can be estimated using the following approach: The efficiency

η_{sc}^{980}

This efficiency can be obtained at 980 nm (1.26 eV) using the efficiency versus band gap calculated for the AM1.5G spectra in the extended Shockley–Queisser approach . At 980 nm, the

η_{sc}^{980}

is found to be equal to 32.9%. The efficiency

η_{abs}^{DC}

Coming from the ellipsometry measurement at each wavelength, the absorption coefficient spectrum of the host matrix is determined using the imaginary part of the refractive index.…”

Section: Additional External Quantum Efficiency Evaluationmentioning

confidence: 99%

See 2 more Smart Citations

Highly Efficient Infrared Quantum Cutting in Tb³⁺−Yb³⁺ Codoped Silicon Oxynitride for Solar Cell Applications

Labbé

Cardin

et al. 2013

Advanced Optical Materials

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A high effi ciency infrared quantum cutting effect in a Tb 3+ -Yb 3+ codoped silicon oxynitride system is demonstrated. The thin fi lms are deposited on Si substrates by reactive magnetron co-sputtering of a Si target topped with Tb 4 O 7 and Yb 2 O 3 chips under pure nitrogen plasma. The photoluminescence dynamics are investigated, revealing a quantum effi ciency of this system at 980 nm up to 197% for the higher Yb 3+ concentration. Thus, via a cooperative transfer mechanism between Tb 3+ and Yb 3+ , an absorbed UV-visible photon gives rise to almost two emitted IR photons. Such a down-conversion effect is demonstrated upon indirect excitation of energy donors, via defect states in the host matrix. These down-converter fi lms could be directly and easily integrated on top of the Si-based solar cell to improve the photoelectric conversion effi ciency at a lower cost. An evaluation of the additional external quantum effi ciency is deduced from this optical system and found to be almost 2%.Adv. Optical Mater. 2013, 1, 855-862 856 wileyonlinelibrary.com

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“…To calculate the loss due to the occultation by DC layer (

η_{EQE}^{loss}

) of 14% of the incident energy on the sc , we assume no DC effect (

η_{conv}^{DC \to 980} = 100 %)

and full extraction (

η_{extrac}^{980} = 100 %

) for the sc . The efficiency calculated for the AM1.5G spectra in the extended Shockley–Queisser approach, gives a

η_{sc}^{400}

of 3.5%. at a 400 nm (3.1 eV) wavelength, corresponding to the middle of the DC range.…”

Section: Additional External Quantum Efficiency Evaluationmentioning

confidence: 96%

“…This efficiency can be obtained at 980 nm (1.26 eV) using the efficiency versus band gap calculated for the AM1.5G spectra in the extended Shockley–Queisser approach . At 980 nm, the

η_{sc}^{980}

is found to be equal to 32.9%.…”

Section: Additional External Quantum Efficiency Evaluationmentioning

confidence: 97%

“…Therefore the

η_{EQE}^{with}

can be rewritten by the equations and :

\begin{matrix} true \\ right η_{EQE}^{with} = η_{sc}^{980} ((), \frac{ϕ_{DC}}{ϕ_{sun}}) ((), \frac{ϕ_{DC}^{'}}{ϕ_{DC}}) ((), \frac{ϕ_{sc}^{'}}{ϕ_{DC}^{'}}) \end{matrix}

\begin{matrix} true \\ right η_{EQE}^{with} = η_{sc}^{980} . η_{a b s}^{DC} . η_{conv}^{DC \to 980} . η_{extrac}^{980} \end{matrix}

where,

η_{a b s}^{DC}

η_{conv}^{DC \to 980}

, and

η_{extrac}^{980}

are the different efficiencies linked respectively to the different terms of the equation . These four efficiencies can be estimated using the following approach: The efficiency

η_{sc}^{980}

This efficiency can be obtained at 980 nm (1.26 eV) using the efficiency versus band gap calculated for the AM1.5G spectra in the extended Shockley–Queisser approach . At 980 nm, the

η_{sc}^{980}

is found to be equal to 32.9%. The efficiency

η_{abs}^{DC}

Coming from the ellipsometry measurement at each wavelength, the absorption coefficient spectrum of the host matrix is determined using the imaginary part of the refractive index.…”

Section: Additional External Quantum Efficiency Evaluationmentioning

confidence: 99%

See 1 more Smart Citation

Highly Efficient Infrared Quantum Cutting in Tb³⁺−Yb³⁺ Codoped Silicon Oxynitride for Solar Cell Applications

Labbé

Cardin

et al. 2013

Advanced Optical Materials

View full text Add to dashboard Cite

show abstract

“…Assuming the subcells in the simplied system are characterized under the 1 sun AM1.5D spectrum and have a front air interface, we can calculate the power produced in subcell #2 as a function of B and D using basic detailed balance principles. 26,27 See the ESI † material for the full derivation. The power produced in subcell #2 is given by:…”

Section: Broader Contextmentioning

confidence: 99%

Multijunction solar cell efficiencies: effect of spectral window, optical environment and radiative coupling

Eisler

Abrams

Sheldon

et al. 2014

Energy Environ. Sci.

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Solar cell efficiency is maximized through multijunction architectures that minimize carrier thermalization and increase absorption. Previous proposals suggest that the maximum efficiency for a finite number of subcells is achieved for designs that optimize for light trapping over radiative coupling. We instead show that structures with radiative coupling and back reflectors for light trapping, e.g. spectrum-splitting cells, can achieve higher conversion efficiencies. We model a compatible geometry, the polyhedral specular reflector. We analyze and experimentally verify the effects of spectral window and radiative coupling on voltage and power. Our results indicate that radiative coupling with back reflectors leads to higher efficiencies than previously studied architectures for practical multijunction architectures (i.e., #20 subcells).The photovoltaic community is closer than ever to achieving ultra-high multijunction solar cell efficiencies (>50%).1-8 Subcells from III-V compound semiconductors are approaching ideal Shockley-Queisser behavior and emit signicant radiation of photons with energies equal to or above the optical bandgap because nonradiative recombination has been minimized with advanced growth processes.6,9 The optical environment of a solar cell controls where the radiated photons from a subcell are directed and this greatly affects its efficiency.2,3 Thus the optical design of multijunction architectures is crucial for maximizing performance. To date, (1) light trapping and (2) radiative coupling have been investigated as promising optical design strategies. Light trapping inhibits the radiative emission of a subcell in order to reduce the dark current and increase voltage.For example, this can be achieved by including a back reector on a cell.9 By contrast, radiative coupling directs radiative emission between neighboring subcells for reconversion. 2,8Cells that have a high degree of radiative coupling have higher currents and are more tolerant of spectral mismatch because photons can be redistributed and boost carrier generation in the current-limited subcells.10-15 Thus including both strong light trapping and radiative coupling could yield very high efficiencies. However, only geometries that optimize for either strong light trapping or strong radiative coupling have been considered in the previous literature.2 Until now, a proposed structure that only optimizes for light trapping and completely blocks radiative coupling using frequency selective reectors matched to the band gap emission of each subcell has been assumed to be the most efficient structure for discrete numbers of junctions. This 'selective reector' design has been shown to give the highest efficiencies for time symmetric structures comprised of a realistic number Broader contextEven with the recent advances in photovoltaics research, 50% solar cell efficiencies have not yet been achieved. Previous designs have focused on a tandem stack structure where semiconductor layers are epitaxially grown or wafer bonded on top of e...

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“…Although recorded overall cost (~0.1 $/kWh) is achieved by current-day PV technology, the limitation of low material quality and poor PCE make it difficult to compete with that of conventional energy sources. Therefore, third-generation device concepts mainly aim to overcome the Shockley-Queisser efficiency limit for a single p-n junction (~33%, 1 Sun), while reducing production cost [25][26][27][28][29][30][31][32]. As one strategy, multijunction solar cells based on thin films of III/V compound semiconductor materials commonly employ a stack of p-n junctions and their PCE can infinitely approach the theoretical 68% at 1-sun intensity (thermodynamic limit) [13,[33][34][35].…”

Section: Introductionmentioning

confidence: 99%

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

et al. 2018

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Photovoltaics (PVs) based on nanostructured III/V semiconductors can potentially reduce the material usage and increase the light-to-electricity conversion efficiency, which are anticipated to make a significant impact on the next-generation solar cells. In particular, GaAs nanowire (NW) is one of the most promising III/V nanomaterials for PVs due to its ideal bandgap and excellent light absorption efficiency. In order to achieve large-scale practical PV applications, further controllability in the NW growth and device fabrication is still needed for the efficiency improvement. This article reviews the recent development in GaAs NW-based PVs with an emphasis on cost-effectively synthesis of GaAs NWs, device design and corresponding performance measurement. We first discuss the available manipulated growth methods of GaAs NWs, such as the catalytic vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) epitaxial growth, followed by the catalyst-controlled engineering process, and typical crystal structure and orientation of resulted NWs. The structure-property relationships are also discussed for achieving the optimal PV performance. At the same time, important device issues are as well summarized, including the light absorption, tunnel junctions and contact configuration. Towards the end, we survey the reported performance data and make some remarks on the challenges for current nanostructured PVs. These results not only lay the ground to considerably achieve the higher efficiencies in GaAs NW-based PVs but also open up great opportunities for the future low-cost smart solar energy harvesting devices.

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Analytical treatment of Trivich–Flinn and Shockley–Queisser photovoltaic efficiency limits using polylogarithms

Cited by 13 publications

References 15 publications

Highly Efficient Infrared Quantum Cutting in Tb³⁺−Yb³⁺ Codoped Silicon Oxynitride for Solar Cell Applications

Highly Efficient Infrared Quantum Cutting in Tb³⁺−Yb³⁺ Codoped Silicon Oxynitride for Solar Cell Applications

Multijunction solar cell efficiencies: effect of spectral window, optical environment and radiative coupling

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

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Analytical treatment of Trivich–Flinn and Shockley–Queisser photovoltaic efficiency limits using polylogarithms

Cited by 13 publications

References 15 publications

Highly Efficient Infrared Quantum Cutting in Tb3+−Yb3+ Codoped Silicon Oxynitride for Solar Cell Applications

Highly Efficient Infrared Quantum Cutting in Tb3+−Yb3+ Codoped Silicon Oxynitride for Solar Cell Applications

Multijunction solar cell efficiencies: effect of spectral window, optical environment and radiative coupling

GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics

Contact Info

Product

Resources

About

Highly Efficient Infrared Quantum Cutting in Tb³⁺−Yb³⁺ Codoped Silicon Oxynitride for Solar Cell Applications

Highly Efficient Infrared Quantum Cutting in Tb³⁺−Yb³⁺ Codoped Silicon Oxynitride for Solar Cell Applications