Analytical Time-Domain Models for Performance Optimization of Multilayer GNR Interconnects

Nishad, Atul Kumar; Sharma, Rohit

doi:10.1109/jstqe.2013.2272458

Cited by 81 publications

(70 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11 Therefore, the equivalent low bias resistance of MLGNR is different in 2 such cases. 11 Therefore, the equivalent low bias resistance of MLGNR is different in 2 such cases.…”

Section: Temperature-dependent Circuit Modeling Of Mlgnrmentioning

confidence: 99%

“…It is reported that, 11 as compared to copper interconnect, performance in terms of delay, the side contact MLGNRs have better performance whereas the top contact MLGNRs have performance comparable. The works reported in the literature [12][13][14][15][16] were primarily focused on the influence of GNR parameters on the performance of MLGNR as interconnects.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

Circuit Theory & Apps

View full text Add to dashboard Cite

The temperature-dependent circuit modeling and performance in terms of propagation delay, power dissipation, and crosstalk-induced voltage waveform at the far end of victim line of multilayer graphene nanoribbon (MLGNR) interconnects have been analyzed at 22 nm technology node. A comparative performance analysis between MLGNR interconnects with resistance estimated using temperature-dependent model and temperature-independent model is examined. The results obtained are also compared with capacitively coupled interconnects of copper (Cu). The results show that as the temperature is varied from 300 K to 500 K, MLGNR has lower propagation delay and power dissipation as compared to Cu for 1 mm long interconnects. It is also observed that because of the dominance of both low resistance and ground capacitance compared to Cu, MLGNR has better crosstalk-induced delay and voltage waveforms with rise in temperature at the far end of aggressor and victim line, respectively. Further, simulated results show an average relative improvement in propagation delay of 37.24% and corresponding improvement in power dissipation of approximately 19.59% by using a temperature-dependent model in comparison to a temperature-independent model of MLGNR resistance with interconnect lengths varying from 200 to 1000 μm. The reduction in the time duration of victim output pulse over these interconnect lengths also shows a significant improvement of approximately 35% by using temperature-dependent model as against temperature-independent model of MLGNR resistance.

show abstract

“…11 Therefore, the equivalent low bias resistance of MLGNR is different in 2 such cases. 11 Therefore, the equivalent low bias resistance of MLGNR is different in 2 such cases.…”

Section: Temperature-dependent Circuit Modeling Of Mlgnrmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

Circuit Theory & Apps

View full text Add to dashboard Cite

show abstract

“…Due to their higher resistance SLGNRs are not suitable for the interconnect applications but as MLGNRs have multiple parallel conduction paths so their resistance decreases by the concept of parallel resistances and thus they are well suited for the interconnect applications in sub-micron VLSI circuits [16].…”

Section: Fig -2: (A) Armchair (B) Zig-zagmentioning

confidence: 99%

MLGNR Interconnects With Finfet Driver: Optimized Delay and Power Performance for Technology Beyond 16nm

.¹

2014

IJRET

View full text Add to dashboard Cite

show abstract

“…Recently, Transmission-Line Modeling (TLM) [12] and analytical time-domain models [13] have been applied for modelling graphene devices. A widely known, powerful and yet relatively simple method in computational electrodynamics is the Finite-Difference Time-Domain (FDTD) method [11].…”

Section: Introductionmentioning

confidence: 99%

FDTD Formulation for Graphene Modeling Based on Piecewise Linear Recursive Convolution and Thin Material Sheets Techniques

Oliveira

Rodrigues

Dmitriev

2015

Antennas Wirel. Propag. Lett.

View full text Add to dashboard Cite

A finite-difference time-domain formulation based on piecewise linear recursive convolution method and on thin material sheets technique is developed for modelling terahertz graphene antennas and some other photonic components. The graphene sheets are modelled by specific recursive equations obtained for tangential electric field components allowing one to apply easily voltage or current sources between the sheets. The effective conductivity of graphene sheets in Yee's threedimensional lattice is calculated and used in simulations. A bowtie-like geometry is investigated, aiming at resonance tuning. The developed numerical formulation is validated by comparison of results with data published in literature.

show abstract

Analytical Time-Domain Models for Performance Optimization of Multilayer GNR Interconnects

Cited by 81 publications

References 29 publications

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

MLGNR Interconnects With Finfet Driver: Optimized Delay and Power Performance for Technology Beyond 16nm

FDTD Formulation for Graphene Modeling Based on Piecewise Linear Recursive Convolution and Thin Material Sheets Techniques

Contact Info

Product

Resources

About