Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

Li, Hao Nan; Yu, Tianbiao; Zhu, Lei; Wang, Wan Shan

doi:10.1016/j.matdes.2017.05.068

Cited by 100 publications

(21 citation statements)

References 38 publications

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“…The size of plastic zone bi is equal to the depth of the lateral crack, which nucleate at the bottom of the ductile zone. Therefore,

the maximum peak height and valley depth of the ground surface roughness are between the ground surface and the bottom bi of the plastic zone [ 19 ].…”

Section: The Modeling Of Predicting Ssdmentioning

confidence: 99%

“…In the process of grinding, the influence of the anisotropy of mono-crystalline silicon ( Table 3 ) and different types of ductile- and brittle-regimes on subsurface damage should be considered, the critical ground surface roughness (R Z ) value for the ductile-brittle-transition to be expressed in Li’s model [ 19 ]:

…”

Section: The Modeling Of Predicting Ssdmentioning

confidence: 99%

“…Zhang [ 18 ] developed an analytical model in the rotation grinding process to predict the SSD depth in the silicon wafer, which considered the effect of anisotropy in the grinding process. Li et al [ 19 ] extended the model to the silicon obtained through the relationship between surface roughness and SSD depth by a CBN (Cubic Boron Nitride) grinding wheel. The SSD depth can be predicted by measuring surface roughness.…”

Section: Introductionmentioning

confidence: 99%

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The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding

Yang

Li²

2021

Micromachines

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Subsurface damage (SSD) produced in a grinding process will affect the performance and operational duration of single-crystal silicon. In order to reduce the subsurface damage depth generated during the grinding process by adjusting the process parameters (added), experiments were designed to investigate the influence of machining factors on SSD. This included crystal orientation, diamond grit size in the grinding wheel, peripheral speed of the grinding wheel, and feeding with the intention to optimize the parameters affecting SSD. Compared with isotropic materials such as glass, we considered the impact of grinding along different crystal directions <100> and <110> on subsurface damage depth (added). The Magnetorheological Finishing (MRF) spot technique was used to detect the depth of SSD. The results showed that the depth of SSD in silicon increased with the size of diamond grit. SSD can be reduced by either increasing the peripheral speed of the grinding wheel or decreasing the feeding rate of the grinding wheel in the <100> crystal orientation, if the same size of diamond grit was employed. In addition, we proposed a modified model around surface roughness and subsurface crack depth, which considered plastic and brittle deformation mechanisms and material properties of different crystal orientations. When the surface roughness (RZ) exceeded the brittle-plastic transition’s critical value RZC (RZC<100> > 1.5 μm, RZC<110> > 0.8 μm), cracks appeared on the subsurface. The experimental results were consistent with the predicted model, which could be used to predict the subsurface cracks by measuring the surface roughness. However, the model only gives the approximate range of subsurface defects, such as dislocations. The morphology and precise depth of plastic deformation subsurface defects, such as dislocations generated in the fine grinding stage, needed to be inspected by transmission electron microscopy (TEM), which were further studied.

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“…The size of plastic zone bi is equal to the depth of the lateral crack, which nucleate at the bottom of the ductile zone. Therefore,

the maximum peak height and valley depth of the ground surface roughness are between the ground surface and the bottom bi of the plastic zone [ 19 ].…”

Section: The Modeling Of Predicting Ssdmentioning

confidence: 99%

…”

Section: The Modeling Of Predicting Ssdmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding

Yang

Li²

2021

Micromachines

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“…In semiconductor industry, silicon wafer is usually produced by slicing, edge profiling, lapping, grinding, etching, grinding, and cleaning processes [ 2 , 3 ]. Damages such as amorphous layers, dislocations, and microcracks, can be produced at the surface of silicon wafers during mechanical machining processes [ 4 , 5 ]. These damages will reduce performance and lifetime of the wafers [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

Wang

2021

Micromachines

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In this paper, we first report the laser grinding method for a single-crystal silicon wafer machined by diamond sawing. 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), laser micro-Raman spectroscopy were utilized to characterize the surface quality of laser-grinded Si. Results show that SiO2 layer derived from mechanical machining process has been efficiently removed after laser grinding. Surface roughness Ra has been reduced from original 400 nm to 75 nm. No obvious damages such as micro-cracks or micro-holes have been observed at the laser-grinded surface. In addition, laser grinding causes little effect on the resistivity of single-crystal silicon wafer. The insights obtained in this study provide a facile method for laser grinding silicon wafer to realize highly efficient grinding on demand.

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“…Zuo et al (2017) claimed that silicon is an excellent optical material in the near and mid-infrared due to its broad mid-IR transparency and mechanical stability. Being a hard and brittle material, a silicon wafer generally suffers from subsurface damage (SSD) during a machining process, such as wire sawing studied by Kumar et al (2016) and grinding studied by Li et al (2017). Although Bifano et al (1991) proposed that a hard and brittle material could be machined in a ductile regime to avoid SSD, they only observed the machined surface without any inspection on the subsurface condition of the material.…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional detection of subsurface damage in silicon wafers with polarized laser scattering

Yin

Bai

Haitjema

et al. 2020

Journal of Materials Processing Technology

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Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

Cited by 100 publications

References 38 publications

The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding

The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding

Laser Grinding of Single-Crystal Silicon Wafer for Surface Finishing and Electrical Properties

Two-dimensional detection of subsurface damage in silicon wafers with polarized laser scattering

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