Analytical Modeling and Numerical Simulation for Optimization of Inorganic Material Thin Layer Using Genetic Algorithms

The article contains a description of various growing conditions for isoparametric heterostructures based on InP. It is shown that the structural perfection of solid solutions grown on InP substrates is influenced by parameters, such as the temperature of the epitaxy process, the temperature gradient, and the composition and thickness of the liquid zone. By analyzing the quality of the surface and the structural perfection of isoparametric AlGaInAsP solid solutions, based on InP, optimal parameters of the zone recrystallization process in the temperature gradient field (TGZR), at which the epitaxial films had minimal roughness and high crystalline perfection, were found.

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Analytical Modeling and Numerical Simulation for Optimization of Inorganic Material Thin Layer Using Genetic Algorithms

Cited by 2 publications

References 50 publications

Structural and optical properties of ZnO thin films grown by rapid atmospheric mist chemical vapor technique

Structural and optical properties of ZnO thin films grown by rapid atmospheric mist chemical vapor technique

Growing of AlInGaAsP Solid Solutions on InP Substrates for Photovoltaic Converters

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