Calculation of core loss is essential in the design of magnetic components especially in high frequency applications. Existing empirical approaches still present some limitations such as the inaccuracy and the difficulty to apply under non-sinusoidal waveforms. In particular, these methods fail to predict core loss with low duty cycle and when there is a significant change in the frequency. In addition to that, the use of different solutions of Steinmetz parameters for different frequency range can present some discontinuity problems at the boundary of each frequency interval. The main contribution of this study is to develop a new empirical method to estimate magnetic core losses under nonsinusoidal induction. The developed method is enough accurate and user-friendly to apply by designers. The effects of the frequency and the duty cycle are considered. The developed model is verified and compared with the Improved Generalized Steinmetz Equation (IGSE) and measurement data from literature with 3F3 and N67 ferrite materials.Index Terms-High frequency core loss, empirical core loss calculation method, Ferrite materials.
This paper discusses the estimation of possible device destructions inside converters in order to predict failures by mean of simulation. The study of insulated gate bipolar transistor (IGBT) thermal destruction under short circuit is investigated. An easy experimental method is presented to estimate the temperature decay in the device from the saturation current response at low gate-to-source voltage during cooling phase. A comparison with other classical experimental methods is given. Three one-dimensional (1-D) thermal models are also studied. The first one is a thermal equivalent circuit represented by series of resistance-capacitance (RC) cells, the second model treats the discretized heat-diffusion equation (HDE), and the third model is an analytical model developed by building an internal approximation (IA) of the heat-diffusion problem. It is shown that the critical temperature of the device just before destruction is larger than the intrinsic temperature, which is the temperature at which the semiconductor becomes intrinsic. The estimated critical temperature is above 1050 K, so it is much higher than the intrinsic temperature ( 550 K). The latter value is underestimated when multidimensional phenomena are not taken into account. The study is completed by results showing the threshold voltage and the saturation current degradation when the IGBT is submitted to a stress (repetitive short circuit).
Different energy sources and converters need to be integrated with each other for extended usage of alternative energy, in order to meet sustained load demands during various weather conditions. The objective of this paper is to associate photovoltaic generators, fuel cells, and electrolysers. Here, to sustain the power demand and solve the energy storage problem, electrical energy can be stored in the form of hydrogen. By using an electrolyser, hydrogen can be generated and stored for future use. The hydrogen produced by the electrolyser using PV power is used in the FC system and acts as an energy buffer. Thus, the effects of reduction and even the absence of the available power from the PV system can be easily tackled. Modeling and simulations are performed using MATLAB/Simulink and SimPowerSystems packages and results are presented to verify the effectiveness of the proposed system.
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